AON4421 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AON4421 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4421
P-Channel Enhancement Mode
Field Effect Transistor
General Description
Product Summary
-30V
VDS
The AON4421 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch.
-8A
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS=-4.5V)
< 26mΩ
< 34mΩ
ESD Protected
-RoHS Compliant
-Halogen Free
D
DFN 3x2
Top View
Bottom View
Pin 1
D
D
D
G
D
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-30
Units
Drain-Source Voltage
V
V
VGS
Gate-Source Voltage
±20
TA=25°C
TA=70°C
Pulsed Drain Current C
-8
-6
Continuous Drain
Current
ID
A
IDM
-60
TA=25°C
TA=70°C
2.5
PD
W
Power Dissipation B
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
42
Max
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
74
90
Steady-State
Steady-State
RθJL
25
30
Rev 0: February 2009
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Page 1 of 5
AON4421
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
±10
VGS(th)
ID(ON)
-0.8
-60
-1.3
-1.8
V
A
V
GS=-10V, ID=-8A
21
28
26
34
34
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-7A
VDS=-5V, ID=-8A
IS=-1A,VGS=0V
27
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
22
S
V
A
-0.74
-1
-3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
930
170
120
8
1120
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg(-10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
17.6
8.6
2
21
10
nC
nC
nC
nC
ns
Qg(-4.5V)
V
GS=-10V, VDS=-15V, ID=-8A
Qgs
Qgd
tD(on)
tr
3.4
6
VGS=-10V, VDS=-15V, RL=1.9Ω,
7
ns
R
GEN=3Ω
tD(off)
tf
40
30
18
32
ns
ns
trr
IF=-8A, dI/dt=500A/µs
IF=-8A, dI/dt=500A/µs
22
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2009
www.aosmd.com
Page 2 of 5
AON4421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
60
-6V
-10V
-4.5V
VDS=-5V
25
20
15
10
5
50
40
30
20
10
0
-4V
-3.5V
-3V
25°C
125°C
VGS=-2.5V
4
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
35
1.5
1.4
1.3
1.2
1.1
1.0
0.9
VGS=-10V
ID=-8A
VGS=-4.5V
30
25
20
15
10
VGS=-4.5V
ID=-7A
VGS=-10V
0
25
50
75
100
125
150
175
0
4
8
12
16
20
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
70
60
50
40
30
20
10
1.0E+02
1.0E+01
ID=-8A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
0.6
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: February 2009
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Page 3 of 5
AON4421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
1200
1000
800
600
400
200
0
VDS=-15V
ID=-8A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
Qg (nC)
15
20
0
5
10
15
20
25
30
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
1ms
RDS(ON)
limited
10ms
100ms
0.1
10s
DC
TJ(Max)=150°C
TA=25°C
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2009
www.aosmd.com
Page 4 of 5
AON4421
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
f
td(off)
td(on)
t
r
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & W aveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 0: February 2009
www.aosmd.com
Page 5 of 5
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