AON4605 [FREESCALE]
30V Complementary MOSFET; 30V互补MOSFET
| 型号： | AON4605 |
| 厂家： | 
Freescale |
| 描述： | 30V Complementary MOSFET |
| 文件： | 总9页 (文件大小：825K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4605
30V Complementary MOSFET
General Description
The AON4605 uses advanced trench technology to
complementary MOSFETs form a high-speed power
provide excellent R
DS(ON) and low gate charge. The
inverter, suitable for a multitude of applications.
Features
N-Channel
P-Channel
-30V
VDS= 30V
ID= 4.3A (VGS=10V)
-3.4A (VGS=-10V)
RDS(ON)
RDS(ON)
< 50mꢀ (VGS=10V)
< 70mꢀ (VGS=4.5V)
< 110mꢀ (VGS=-10V)
< 180mꢀ (VGS=-4.5V)
D1
D2
Top View
S1
G1
S2
G2
1
8
D1
D1
D2
D2
2
3
4
7
6
5
G1
G2
S1
S2
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Max n-channel
Max p-channel
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
4.3
3.4
18
-30
±20
-3.4
-2.7
-13
1.9
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
Pulsed Drain Current C
ID
A
IDM
PD
TA=25°C
TA=70°C
1.9
1.2
W
°C
Power Dissipation B
1.2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
51.5
82
Max
65
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
100
50
RθJL
40
1 / 9
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AON4605
30V Complementary MOSFET
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4.3A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.5
nA
V
VGS(th)
ID(ON)
1.5
18
2
A
36
57
48
11
0.8
50
80
70
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=2.5A
VDS=5V, ID=4.5A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
170
35
210
5.3
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
23
VGS=0V, VDS=0V, f=1MHz
1.7
3.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
4.05
2
5
3
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=4.3A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
0.55
1
Gate Drain Charge
Turn-On DelayTime
4.5
1.5
18.5
15.5
7.5
2.5
Turn-On Rise Time
VGS=10V, VDS=15V, RL=3.4Ω,
RGEN=3Ω
ns
tD(off)
tf
Turn-Off DelayTime
ns
Turn-Off Fall Time
ns
trr
IF=4.3A, dI/dt=100A/µs
IF=4.3A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
2 / 9
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AON4605
30V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
12
9
VDS=5V
10V
4V
4.5V
8
7V
6
3.5V
4
6
125°C
VGS=3V
2
3
25°C
0
0
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
V
DS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
70
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=4.5A
60
50
40
30
VGS=4.5V
VGS=10V
VGS=4.5V
ID=3A
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
120
100
80
1.0E+02
1.0E+01
ID=4.5A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
60
25°C
40
20
0
2
4
6
8
10
0.0
0.2
0.4
0.6
VSD (Volts)
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
3 / 9
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AON4605
30V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
250
200
150
100
50
10
VDS=15V
ID=4.5A
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
DS (Volts)
20
25
30
0
1
2
3
4
5
V
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
1000
TA=25°C
10µs
100
10
1
RDS(ON)
limited
100µs
1ms
10ms
0.1
TJ(Max)=150°C
DC
10s
TA=25°C
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TA+PDM.ZθJA.RθJA
θJA=100°C/W
R
1
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
100
1000
4 / 9
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AON4605
30V Complementary MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
5 / 9
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AON4605
30V Complementary MOSFET
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
T
J=55°C
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
-2.4
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-3.4A
-1.4
-13
-1.9
A
77
100
125
6
110
140
180
mΩ
RDS(ON)
Static Drain-Source On-Resistance
T
J=125°C
V
V
GS=-4.5V, ID=-2A
DS=-5V, ID=-3.4A
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
-0.8
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
197
42
240
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
26
37
3.5
7.2
11.0
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
4.3
2.2
5.2
3
nC
nC
nC
nC
ns
VGS=10V, VDS=-15V, ID=-3.4A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
0.7
Gate Drain Charge
1.1
Turn-On DelayTime
7.5
Turn-On Rise Time
VGS=10V, VDS=-15V, RL=4.4Ω,
RGEN=3Ω
4.1
ns
tD(off)
tf
Turn-Off DelayTime
11.8
3.8
ns
Turn-Off Fall Time
ns
trr
IF=-3.4A, dI/dt=100A/µs
IF=-3.4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11.3
4.4
14
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
6 / 9
www.freescale.net.cn
AON4605
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
12
9
VDS=-5V
-10V
-6V
-8V
8
-5V
6
-4.5V
4
6
125°C
-4V
VGS=-3.5V
4
25°C
4
2
3
0
0
0
1
2
3
5
0
1
2
3
5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
200
180
160
140
120
100
80
1.6
1.4
1.2
1
VGS=-10V
ID=-3.4A
VGS=-4.5V
VGS=-10V
=-4.5V
VGS
ID=-2A
60
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
300
260
220
180
140
100
60
1.0E+02
1.0E+01
ID=-3.4A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
7 / 9
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AON4605
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
VDS=-15V
ID=-3.4A
250
200
150
100
50
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
-VDS (Volts)
20
25
30
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
DC
10ms
0.1
TJ(Max)=150°C
10s
TA=25°C
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TA+PDM.ZθJA.Rθ
JA
RθJA=100°C/W
0.1
PD
Single Pulse
0.001
0.01
Ton
T
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
100
1000
8 / 9
www.freescale.net.cn
AON4605
30V Complementary MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
9 / 9
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