AON4703 [FREESCALE]
20V P-Channel MOSFET with Schottky Diode; 20V P沟道MOSFET和肖特基二极管
| 型号： | AON4703 |
| 厂家： | 
Freescale |
| 描述： | 20V P-Channel MOSFET with Schottky Diode |
| 文件： | 总6页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4703
20V P-Channel MOSFET with Schottky Diode
General Description
The AON4703 uses advanced trench technology to prov
DS(ON) and low gate charge. A Schottky diode is
ide excellent R
blockingswitch, or for buck converter applications
rectional
provided to facilitatethe implementation of a bidi
Features
VDS (V) = -20V
ID = -3.4A (VGS = -4.5V)
RDS(ON) < 90mΩ (VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -2.5V)
RDS(ON) < 160mΩ (VGS = -1.8V)
SCHOTTKY
VKA (V) = 20V, IF = 1A, VF<0.5V @ 1A
DFN 3x2
Top View
Bottom
D
K
Pin 1
1
2
3
4
8
7
6
5
A
A
S
G
K
K
D
D
G
S
A
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Schottky
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
VGS
±8
TA=25°C
TA=70°C
-3.4
ID
Continuous Drain Current A
Pulsed Drain Current B
Schottky reverse voltage
-2.7
-15
A
IDM
VKA
20
1.9
V
A
TA=25°C
TA=70°C
IF
IFM
Continuous Forward Current A
Pulsed Forward Current B
1.2
7
TA=25°C
TA=70°C
1.7
1.1
0.96
PD
W
°C
Power Dissipation
0.62
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
51
88
Max
75
110
35
Units
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
Maximum Junction-to-Ambient A
°C/W
°C/W
Maximum Junction-to-Lead C
Steady-State
RθJL
28
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
66
95
40
80
130
50
RθJA
RθJL
Maximum Junction-to-Lead C
Steady-State
1/6
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AON4703
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-20V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
±100
-1
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-0.4
-15
-0.65
VGS=-4.5V, VDS=-5V
A
VGS=-4.5V, ID=-3.4A
51
64
90
135
120
160
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.5A
65
mΩ
mΩ
S
VGS=-1.8V, ID=-1.5A
83
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-3.4A
IS=-1A,VGS=0V
12
-0.7
-1
-2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
560
80
745
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
VGS=0V, VDS=0V, f=1MHz
15
23
11
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.5
1.2
2.1
7.2
36
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-3.4A
VGS=-4.5V, VDS=-10V, RL=2.9Ω,
RGEN=3Ω
tD(off)
tf
53
56
trr
IF=-3.4A, dI/dt=100A/µs
IF=-3.4A, dI/dt=100A/µs
37
49
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
27
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1A
0.4
0.5
0.2
20
V
VR=16V
Irm
Maximum reverse leakage current
mA
VR=16V, TJ=125°C
CT
trr
Junction Capacitance
VR=10V
44
11
pF
ns
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
14
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
Qrr
2.5
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
2/6
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AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
25
-3.0V
-4.5V
VDS=-5V
-2.5V
16
12
8
20
15
10
5
-2.0V
125°C
VGS=-1.5V
4
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
-VGS(Volts)
2
2.5
3
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
90
80
70
60
50
40
1.4
VGS=-2.5V
ID=-2.5A
1.3
1.2
1.1
1
VGS=-1.8V
ID=-1.5A
VGS=-2.5V
VGS=-4.5V
ID=-3.4A
VGS=-4.5V
0.9
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
180
140
100
60
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
ID=-3.4A
125°
25°C
125°
25°
20
0
2
4
6
8
10
-VGS (Volts)
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
1.2
Figure 5: On-Resistance vs. Gate-Source Voltage
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AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
4
3
2
1
0
VDS=-10V
ID=-3.4A
1200
1000
800
600
400
200
0
Ciss
Crss
Coss
0
2
4
6
8
10
0
5
10
-VDS (Volts)
15
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
20
15
10
5
TJ(Max)=150°C
TA=25°C
100µs
10µs
RDS(ON)
limited
1ms
0.1s
DC
10ms
1s
TJ(Max)=150°C
TA=25°C
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/6
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AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
80
60
40
20
0
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°
f = 1MHz
25°
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
VKA (Volts)
15
20
VF (Volts)
Figure 12: Schottky Forward Characteristics
Figure 13: Schottky Capacitance Characteristics
0.5
0.4
0.3
0.2
0.1
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
IF=0.5A
VR=16V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=130°C/W
R
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
5/6
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AON4703
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgd
Qgs
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
6/6
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