AON4703_10 [AOS]
20V P-Channel MOSFET with Schottky Diode; 20V P沟道MOSFET和肖特基二极管
| 型号： | AON4703_10 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 20V P-Channel MOSFET with Schottky Diode |
| 文件： | 总6页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4703
20V P-Channel MOSFET with Schottky Diode
General Description
Features
The AON4703 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitatethe implementation of a bidirectional
blockingswitch, or for buck converter applications.
VDS (V) = -20V
ID = -3.4A (VGS = -4.5V)
RDS(ON) < 90mΩ (VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -2.5V)
RDS(ON) < 160mΩ (VGS = -1.8V)
SCHOTTKY
VKA (V) = 20V, IF = 1A, VF<0.5V @ 1A
DFN 3x2
Top View
Bottom
D
K
Pin 1
1
2
3
4
8
7
6
5
A
A
S
G
K
K
D
D
G
S
A
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Schottky
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
VGS
±8
TA=25°C
TA=70°C
-3.4
ID
Continuous Drain Current A
Pulsed Drain Current B
Schottky reverse voltage
-2.7
-15
A
IDM
VKA
20
1.9
V
A
TA=25°C
TA=70°C
IF
Continuous Forward Current A
Pulsed Forward Current B
1.2
IFM
PD
7
0.96
TA=25°C
TA=70°C
1.7
1.1
W
°C
Power Dissipation
0.62
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
51
88
Max
75
110
35
Units
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
Maximum Junction-to-Ambient A
°C/W
°C/W
Maximum Junction-to-Lead C
Steady-State
RθJL
28
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
66
95
40
80
130
50
RθJA
RθJL
Maximum Junction-to-Lead C
Steady-State
Rev 2: June 2010
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Page 1 of 6
AON4703
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-20V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
±100
-1
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-0.4
-15
-0.65
VGS=-4.5V, VDS=-5V
A
VGS=-4.5V, ID=-3.4A
51
64
90
135
120
160
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.5A
65
mΩ
mΩ
S
VGS=-1.8V, ID=-1.5A
83
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-3.4A
IS=-1A,VGS=0V
12
-0.7
-1
-2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
560
80
745
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
VGS=0V, VDS=0V, f=1MHz
15
23
11
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.5
1.2
2.1
7.2
36
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-3.4A
VGS=-4.5V, VDS=-10V, RL=2.9Ω,
RGEN=3Ω
tD(off)
tf
53
56
trr
IF=-3.4A, dI/dt=100A/µs
IF=-3.4A, dI/dt=100A/µs
37
49
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
27
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1A
0.4
0.5
0.2
20
V
VR=16V
Irm
Maximum reverse leakage current
mA
VR=16V, TJ=125°C
CT
trr
Junction Capacitance
VR=10V
44
11
pF
ns
IF=1A, dI/dt=100A/µs
14
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
Qrr
2.5
nC
IF=1A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤10s thermal resistance rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: June 2010
www.aosmd.com
Page 2 of 6
AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
25
-3.0V
-4.5V
VDS=-5V
-2.5V
16
12
8
20
15
10
5
-2.0V
125°C
VGS=-1.5V
4
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
-VGS(Volts)
2
2.5
3
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
90
80
70
60
50
40
1.4
VGS=-2.5V
ID=-2.5A
1.3
1.2
1.1
1
VGS=-1.8V
ID=-1.5A
VGS=-2.5V
VGS=-4.5V
ID=-3.4A
VGS=-4.5V
0.9
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
180
140
100
60
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
ID=-3.4A
125°
25°C
125°
25°
20
0
2
4
6
8
10
-VGS (Volts)
0.0
0.2
0.4
-VSD (Volts)
0.6
0.8
1.0
1.2
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Rev 2: June 2010
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Page 3 of 6
AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
4
3
2
1
0
VDS=-10V
ID=-3.4A
1200
1000
800
600
400
200
0
Ciss
Crss
Coss
0
2
4
6
8
10
0
5
10
15
20
-Qg (nC)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
20
15
10
5
TJ(Max)=150°C
TA=25°C
100µs
10µs
RDS(ON)
limited
1ms
0.1s
DC
10ms
1s
TJ(Max)=150°C
TA=25°C
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev 2: June 2010
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Page 4 of 6
AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
80
60
40
20
0
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°
f = 1MHz
25°
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
VKA (Volts)
15
20
VF (Volts)
Figure 12: Schottky Forward Characteristics
Figure 13: Schottky Capacitance Characteristics
0.5
0.4
0.3
0.2
0.1
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
IF=0.5A
VR=16V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=130°C/W
R
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
Rev 2: June 2010
www.aosmd.com
Page 5 of 6
AON4703
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgd
Qgs
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 2: June 2010
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Page 6 of 6
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