AON6704L [AOS]
Transistor;
| 型号： | AON6704L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6704L
30V N-Channel MOSFET
TM
SRFET
General Description
Features
SRFETTMꢀAON6704Lꢀusesꢀadvancedꢀtrenchꢀtechnology
withꢀaꢀmonolithicallyꢀintegratedꢀSchottkyꢀdiodeꢀtoꢀprovide
excellentꢀRDS(ON),andꢀlowꢀgateꢀcharge.ꢀꢀThisꢀdeviceꢀis
suitableꢀforꢀuseꢀasꢀaꢀlowꢀsideꢀFETꢀinꢀSMPS,ꢀload
switchingꢀandꢀgeneralꢀpurposeꢀapplications.
VDSꢀ(V)ꢀ=ꢀ30V
IDꢀ=ꢀ85A
(VGSꢀ=ꢀ10V)
(VGSꢀ=ꢀ10V)
(VGSꢀ=ꢀ4.5V)
R
DS(ON)ꢀ<ꢀ2.4mΩ
RDS(ON)ꢀ<ꢀ3.5mΩ
ꢀꢀꢀ100%ꢀUISꢀTested
ꢀꢀꢀ100%ꢀꢀRgꢀTested
D
Top View
SRFETTM
1
8
SoftꢀRecovery MOSFET:
IntegratedꢀSchottkyꢀDiode
2
3
7
6
4
5
G
S
DFN5X6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
DrainꢁSourceꢀVoltage
GateꢁSourceꢀVoltage
VDS
30
±20
85
V
V
VGS
TC=25°C
ContinuousꢀDrain
CurrentꢀG
PulsedꢀDrainꢀCurrentꢀC
ID
TC=100°C
67
A
A
IDM
250
23
TA=25°C
TA=70°C
ContinuousꢀDrain
Current
AvalancheꢀCurrentꢀC
RepetitiveꢀavalancheꢀenergyꢀL=0.1mHꢀC
IDSM
18
IAR
61
A
EAR
186
83
mJ
TC=25°C
PD
W
PowerꢀDissipationꢀB
TC=100°C
33
TA=25°C
2.3
PDSM
W
PowerꢀDissipationꢀA
1.4
TA=70°C
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ55ꢀtoꢀ150
°C
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
18
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
RθJA
MaximumꢀJunctionꢁtoꢁAmbientꢀAꢀD
MaximumꢀJunctionꢁtoꢁCaseꢀ
SteadyꢁState
SteadyꢁState
55
1.5
RθJC
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6704L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=1mA,ꢀVGS=0V
VDS=30V,ꢀVGS=0V
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
30
V
0.1
mA
100
IDSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
TJ=125°C
TJ=125°C
VDS=0V,ꢀVGS=ꢀ±20V
VDS=VGSꢀꢀID=250µA
VGS=10V,ꢀVDS=5V
IGSS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
Onꢀstateꢀdrainꢀcurrent
0.1
2.2
µA
V
VGS(th)
ID(ON)
1.2
1.7
250
A
V
GS=10V,ꢀID=20A
2
2.4
3.8
3.5
mΩ
RDS(ON)
StaticꢀDrainꢁSourceꢀOnꢁResistance
3.2
2.7
90
VGS=4.5V,ꢀID=20A
VDS=5V,ꢀID=20A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
0.45
0.7
V
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
110
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
3620 4520 5430
pF
pF
pF
Ω
VGS=0V,ꢀVDS=15V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
610
250
0.3
870
420
0.7
1130
590
1.0
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
SWITCHING PARAMETERS
Qg(10V) TotalꢀGateꢀCharge
Qg(4.5V) TotalꢀGateꢀCharge
58
27
12
8
73
34
15
13
12
5
88
41
18
18
nC
nC
nC
nC
ns
VGS=10V,ꢀVDS=15V,ꢀID=20A
Qgs
Qgd
tD(on)
tr
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
TurnꢁOnꢀRiseꢀTime
TurnꢁOffꢀDelayTime
TurnꢁOffꢀFallꢀTime
V
GS=10V,ꢀVDS=15V,ꢀRL=0.75Ω,
ns
RGEN=3Ω
tD(off)
tf
50
19
16
35
ns
ns
trr
IF=20A,ꢀdI/dt=500A/µs
IF=20A,ꢀdI/dt=500A/µs
13
28
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
19
42
ns
Qrr
nC
A.ꢀTheꢀvalueꢀofꢀRθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1in2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTAꢀ=25°C.ꢀThe
PowerꢀdissipationꢀPDSMꢀisꢀbasedꢀonꢀRꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀTheꢀvalueꢀinꢀanyꢀgivenꢀapplicationꢀdepends
onꢀtheꢀuser'sꢀspecificꢀboardꢀdesign.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=150°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupper
dissipationꢀlimitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C.ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀT J(MAX)=150°C.ꢀRatingsꢀareꢀbasedꢀonꢀlowꢀfrequencyꢀandꢀdutyꢀcyclesꢀtoꢀkeepꢀinitial
TJꢀ=25°C.MaximumꢀUISꢀcurrentꢀlimitedꢀbyꢀtestꢀequipment.
D.ꢀTheꢀRθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀcaseꢀR θJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300 µsꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassuming
aꢀmaximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=150°C.ꢀTheꢀSOAꢀcurveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
G.ꢀTheꢀmaximumꢀcurrentꢀratingꢀisꢀlimitedꢀbyꢀpackage.
H.ꢀTheseꢀtestsꢀareꢀperformedꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀin 2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTA=25°C.
Revꢀ2:ꢀ Julꢁ09
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6704L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
180
160
140
120
100
80
200
180
160
140
120
100
80
10V
4V
4.5V
5V
7V
VDS=5V
3.5V
60
60
VGS=3V
40
125°C
40
20
25°C
20
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
4.0
1.8
1.6
1.4
1.2
1
3.5
3.0
2.5
2.0
1.5
1.0
VGS=10V
ID=20A
VGS=4.5V
VGS=4.5V
ID=20A
VGS=10V
0.8
0
5
10
15
ID (A)
20
25
30
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
6
4
2
0
1.0E+02
ID=20A
1.0E+01
125°C
1.0E+00
1.0Eꢁ01
1.0Eꢁ02
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6704L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
10
6000
5000
4000
3000
2000
1000
0
VDS=15V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
40
Qg (nC)
50
60
70
80
0
5
10
15
20
25
30
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
400
350
300
250
200
150
100
50
1000.0
100.0
10.0
1.0
10µs
TJ(Max)=150°C
TC=25°C
RDS(ON)
limited
100µs
1ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
PD
0.1
0.01
Ton
T
SingleꢀPulse
0.0001
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6704L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
220
200
180
160
140
120
100
80
90
80
70
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=125°C
TA=150°C
60
40
20
0
0
25
50
75
100
125
150
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
100
80
60
40
20
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Inꢀdescendingꢀorder
D=Ton/T
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=55°C/W
PD
0.01
0.001
SingleꢀPulse
Ton
T
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6704L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.7
1.0E-02
0.6
VDS=30V
20A
10A
1.0E-03
0.5
1.0E-04
0.4
0.3
0.2
VDS=15V
5A
IS=1A
125
1.0E-05
1.0E-06
0
25
50
75
100
125
150
175
0
25
50
75
100
150
175
Temperature (°C)
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
Figure 18: Diode Forward voltage vs. Junction
Temperature
18
16
14
12
10
8
3
55
50
45
40
35
30
12
10
8
di/dt=800A/µs
di/dt=800A/µs
125ºC
125ºC
2.5
2
trr
25ºC
25ºC
Qrr
Irm
25ºC
1.5
1
6
125ºC
6
4
25ºC
S
4
0.5
0
2
125ºC
2
0
0
0
5
10
15
20
25
30
0
5
10
15
IS (A)
20
25
30
IS (A)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
55
50
45
40
35
30
25
20
15
10
5
10
25
20
15
10
5
2.5
2
Is=20A
125ºC
Is=20A
8
6
4
2
0
trr
125ºC
25ºC
1.5
1
25ºC
25ºC
Qrr
25ºC
125º
S
125º
0.5
0
Irm
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6704L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关型号：
AON6718
Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, GREEN, DFN-8
AOS
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