AOT1100L [AOS]
100V N-Channel Rugged Planar MOSFET; 100V N沟道坚固的平面MOSFET
| 型号： | AOT1100L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 100V N-Channel Rugged Planar MOSFET |
| 文件： | 总6页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT1100L/AOB1100L
100V N-Channel Rugged Planar MOSFET
General Description
Product Summary
VDS
100V
The AOT1100L/AOB1100L uses a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low RDS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
130A
< 12mΩ
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
D
Top View
Bottom View
Top View
Bottom View
D
D
D
D
S
G
D
G
G
S
G
D
G
S
S
S
AOT1100
AOB1100
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
100
±20
130
92
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
A
Pulsed Drain Current C
IDM
208
8
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
6
IAS
122
744
500
250
2.1
A
EAS
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
48
60
RθJC
0.22
0.3
Rev0: Dec 2011
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Page 1 of 6
AOT1100L/AOB1100L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
100
V
VDS=100V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS, ID=250µΑ
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3.8
nA
V
VGS(th)
ID(ON)
2.6
3.2
208
A
10
19
12
22
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TO263
9.7
53
11.7
mΩ
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.69
1
V
A
130
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
4833
721
35
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
1.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
82
23
19
21
22
50
4.5
100
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=50V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
64
ns
Qrr
nC
880
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C. Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec 2011
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Page 2 of 6
AOT1100L/AOB1100L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
VDS=5V
10V
6V
5V
VGS=4.5V
125°C
25°C
0
1
2
3
4
5
0
1
2
3
4
5
6
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
2.8
2.4
2.0
1.6
1.2
0.8
14
12
10
8
VGS=10V
ID=20A
VGS=10V
6
0
8
16
24
32
40
0
25
50
75
100 125 150 175 200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1E+02
1E+01
24
20
16
12
8
ID=20A
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
125°C
25°C
25°C
4
2.0
4.0
6.0
VGS (Volts)
8.0
10.0
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: Dec 2011
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Page 3 of 6
AOT1100L/AOB1100L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
100000
10000
1000
100
VDS=50V
ID=20A
Ciss
8
6
Coss
4
Crss
2
10
0
1
0
15
30
45
Qg (nC)
60
75
90
0
10
20
VDS (Volts)
Figure 8: Capacitance Characteristics
30
40
Figure 7: Gate-Charge Characteristics
1000.0
100.0
10.0
1.0
9000
7500
6000
4500
3000
1500
0
10µs
100µs
1ms
RDS(ON)
limited
DC
10ms
0.1
TJ(Max)=175°C
TC=25°C
0.0
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
0.01
0.1
1
10
VDS (Volts)
100
1000
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Operatin
Area (Note F)
Case (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
1
0.1
PD
Ton
Single Pulse
0.001
0.01
1E-05
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Dec 2011
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Page 4 of 6
AOT1100L/AOB1100L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
120
80
600
500
400
300
200
100
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
40
0
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
1
10
100
1000
10000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
10000
1000
100
10
150
120
90
60
30
0
TA=25°C
1
0
25
50
75
100
125
150
175
0.0001
0.01
1
100
10000
Pulse Width (s)
TCASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
1
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: Dec 2011
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Page 5 of 6
AOT1100L/AOB1100L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev0: Dec 2011
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Page 6 of 6
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