AOT11N70 [AOS]
700V,11A N-Channel MOSFET; 700V ，11A N沟道MOSFET
| 型号： | AOT11N70 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 700V,11A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT11N70/AOTF11N70
700V,11A N-Channel MOSFET
General Description
Product Summary
VDS
800V@150℃
11A
The AOT11N70 & AOTF11N70 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
ID (at VGS=10V)
R
DS(ON) (at VGS=10V)
< 0.87Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT11N70L & AOTF11N70L
Top View
D
TO-220F
TO-220
G
S
S
S
D
G
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT11N70
AOTF11N70
Units
Drain-Source Voltage
Gate-Source Voltage
700
±30
V
V
VGS
TC=25°C
11
11*
Continuous Drain
Current
ID
TC=100°C
7.2
7.2*
A
Pulsed Drain Current C
IDM
43
4
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
120
240
5
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
W/ oC
271
2.1
50.0
0.4
PD
Power Dissipation B
Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
°C
°C
Parameter
Symbol
RθJA
AOT11N70
AOTF11N70
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
0.5
65
--
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
0.46
2.5
* Drain current limited by maximum junction temperature.
Rev 0: March 2010
www.aosmd.com
Page 1 of 6
AOT11N70/AOTF11N70
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
700
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
800
0.8
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V ID=250µA
VGS=10V, ID=5.5A
VDS=40V, ID=5.5A
IS=1A,VGS=0V
3
3.8
0.72
17
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.87
Ω
S
VSD
0.72
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
11
43
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1430 1793 2150
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
116
8.4
1.8
146
10.5
3.6
190
15
5.4
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
30
7.8
12
37.5
10
45
12
22
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=560V, ID=11A
Gate Source Charge
Gate Drain Charge
15
Turn-On DelayTime
42
VGS=10V, VDS=350V, ID=11A,
Turn-On Rise Time
74
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
103
62
Turn-Off Fall Time
trr
IF=11A,dI/dt=100A/µs,VDS=100V
IF=11A,dI/dt=100A/µs,VDS=100V
320
7.2
400
9
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
480
11
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=30mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: March 2010
www.aosmd.com
Page 2 of 6
AOT11N70/AOTF11N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
100
10
1
10V
6.5V
-55°C
VDS=40V
125°C
15
10
5
6V
VGS=5.5V
25°C
0
0.1
0
5
10
15
VDS (Volts)
20
25
30
2
4
6
8
10
V
GS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
2.0
1.5
1.0
0.5
0.0
3
2.5
2
VGS=10V
ID=5.5A
1.5
1
VGS=10V
0.5
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.9
0.8
0.0
0.2
0.4
0.6
0.8
1.0
-100
-50
0
50
100
150
200
VSD (Volts)
TJ (°C)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5:Break Down vs. Junction Temparature
Rev 0: March 2010
www.aosmd.com
Page 3 of 6
AOT11N70/AOTF11N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
12
9
Ciss
VDS=560V
ID=11A
1000
100
10
Coss
6
3
Crss
1
0
0.1
1
10
100
0
10
20
30
40
50
60
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
100
10
RDS(ON)
limited
RDS(ON)
limited
10µs
10
1
10µs
100µs
100µs
1
1ms
1ms
10ms
DC
10ms
DC
0.1s
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1s
1
10
100
VDS (Volts)
1000
10000
1
10
100
VDS (Volts)
1000
10000
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF11N70 (Note F)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT11N70 (Note F)
12
9
6
3
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev 0: March 2010
www.aosmd.com
Page 4 of 6
AOT11N70/AOTF11N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=0.46°C/W
1
0.1
PD
Ton
T
0.01
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT11N70 (Note F)
0.1
1
10
100
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF11N70 (Note F)
Rev 0: March 2010
www.aosmd.com
Page 5 of 6
AOT11N70/AOTF11N70
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev 0: March 2010
www.aosmd.com
Page 6 of 6
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