AOT11N60 [FREESCALE]
600V,11A N-Channel MOSFET; 600V ，11A N沟道MOSFET
| 型号： | AOT11N60 |
| 厂家： | 
Freescale |
| 描述： | 600V,11A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：642K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
General Description
The AOT11N60 & AOTF11N60 have been fabricated
using an advanced high voltage MOSFET process that is
robustness in popular AC-DC applications.By providing
designed to deliver high levels of performance and
low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new
and existing offline power supply designs.
Features
VDS
700V@150℃
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
11A
< 0.65Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT11N60
AOTF11N60
AOTF11N60L
Units
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
11*
8*
V
A
TC=25°C
11
8
11*
8*
Continuous Drain
Current
ID
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
IDM
39
IAR
4.8
345
A
EAR
EAS
dv/dt
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
690
5
mJ
V/ns
W
W/ o
272
2.2
50
37.9
0.3
PD
Power Dissipation B
Derate above 25oC
0.4
C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
°C
Parameter
Symbol
RθJA
AOT11N60
AOTF11N60
AOTF11N60L
Units
Maximum Junction-to-Ambient A,D
65
65
65
°C/W
Maximum Case-to-sink A
RθCS
RθJC
0.5
--
--
°C/W
°C/W
Maximum Junction-to-Case
0.46
2.5
3.3
* Drain current limited by maximum junction temperature.
1/6
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AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
600
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
700
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.67
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V ID=250µA
VGS=10V, ID=5.5A
VDS=40V, ID=5.5A
IS=1A,VGS=0V
3.3
3.9
0.56
12
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.65
Ω
S
VSD
0.73
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
11
39
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1320 1656 1990
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
100
6.5
1.7
146
11.2
3.5
195
16
V
5.3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
24
30.6
9.6
9.6
39
37
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=480V, ID=11A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=300V, ID=11A,
Turn-On Rise Time
58
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
92
Turn-Off Fall Time
42
trr
IF=11A,dI/dt=100A/µs,VDS=100V
IF=11A,dI/dt=100A/µs,VDS=100V
400
4.7
600
7.1
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
500
5.9
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
2/6
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AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
16
12
8
100
10
1
10V
-55°C
VDS=40V
6.5V
6V
125°C
4
25°C
VGS=5.5V
25
0
0.1
0
5
10
15
VDS (Volts)
Fig 1: On-Region Characteristics
20
30
2
4
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
1.4
3
2.5
2
1.2
1.0
0.8
0.6
0.4
VGS=10V
ID=5.5A
1.5
1
VGS=10V
0.5
0
-100
-50
0
50
100
150
200
0
4
8
12
ID (A)
16
20
24
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gat
Voltage
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
1.2
1.1
1
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.9
0.8
0.0
0.2
0.4
0.6
0.8
1.0
-100
-50
0
50
100
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
150
200
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/6
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AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=480V
ID=11A
Ciss
Coss
6
3
Crss
0
1
0
10
20
Qg (nC)
30
40
50
0.1
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
100
10
10µs
10µs
RDS(ON)
limited
10
1
100µs
RDS(ON)
limited
100µs
1ms
1
1ms
10ms
DC
0.1s
1s
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.1
0.01
DC
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT11N60 (Note F)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF11N60 (Note F)
100
12
10
8
10µs
RDS(ON)
limited
10
1
100µs
1ms
6
10ms
4
0.1s
1s
TJ(Max)=150°C
TC=25°C
0.1
0.01
DC
2
0
0
25
50
75
100
125
150
1
10
100
1000
VDS (Volts)
TCASE (°C)
Figure 12: Current De-rating (Note B)
Figure 11: Maximum Forward Biased Safe Operating Area
for AOTF11N60L (Note F)
4/6
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AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.46°C/W
1
0.1
PD
Ton
T
0.01
Single Pulse
0.0001
0.001
0.000001
0.00001
0.001
Pulse Width (s)
0.01
0.1
1
10
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT11N60(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.5°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF11N60 (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.3°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.001
1E-05
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF11N60 (Note F)
5/6
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AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
Gate Charge Test Circuit &Waveform
Vgss
Qgg
10V
+
VDC
+
VDC
Q
g
s
Qggd
Vds
-
-
DUTT
Vgss
Igg
Charge
Resistive Switching Test Circuit & Waveforms
RL
VVds
Vds
90%
10%
+
DUT
Vddd
Vgss
V
D
C
Rgg
-
Vgss
Vggs
t dd(on)
t
r
t
t
t oon
too
f
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
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