AOT3N60_11 [AOS]
600V,2.5A N-Channel MOSFET; 600V ， 2.5A N沟道MOSFET
| 型号： | AOT3N60_11 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 600V,2.5A N-Channel MOSFET |
| 文件： | 总5页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT3N60
600V,2.5A N-Channel MOSFET
General Description
Product Summary
ꢀꢀꢀVDS
700V@150℃
2.5A
TheꢀꢀAOT3N60ꢀhaveꢀbeenꢀfabricatedꢀusingꢀanꢀadvanced
highꢀvoltageꢀMOSFETꢀprocessꢀthatꢀisꢀdesignedꢀtoꢀdeliver
highꢀlevelsꢀofꢀperformanceꢀandꢀrobustnessꢀinꢀpopularꢀACꢁ
DCꢀapplications.ByꢀprovidingꢀlowꢀRDS(on),ꢀCissꢀandꢀCrss
alongꢀwithꢀguaranteedꢀavalancheꢀcapabilityꢀtheseꢀparts
canꢀbeꢀadoptedꢀquicklyꢀintoꢀnewꢀandꢀexistingꢀofflineꢀpower
supplyꢀdesigns.
ꢀꢀꢀIDꢀꢀ(atꢀVGS=10V)
ꢀꢀꢀRDS(ON)ꢀ(atꢀVGS=10V)
<3.5Ω
100%ꢀUISꢀTested
100%ꢀꢀRgꢀTested
ꢀꢀꢀForꢀHalogenꢀFreeꢀaddꢀ"L"ꢀsuffixꢀtoꢀpartꢀnumber:ꢀ
ꢀꢀꢀAOT3N60Lꢀ
TopꢀView
D
TO-220
G
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
600
Units
DrainꢁSourceꢀVoltage
GateꢁSourceꢀVoltage
V
V
VGS
±30
TC=25°C
2.5
ContinuousꢀDrain
Current
ID
TC=100°C
1.9
A
PulsedꢀDrainꢀCurrentꢀC
IDM
8
AvalancheꢀCurrentꢀC
IAR
2
A
RepetitiveꢀavalancheꢀenergyꢀC
EAR
EAS
dv/dt
60
mJ
SingleꢀpulsedꢀavalancheꢀenergyꢀG
Peakꢀdiodeꢀrecoveryꢀdv/dt
TC=25°C
120
mJ
V/ns
W
W/ꢀoC
5
83
PD
PowerꢀDissipationꢀB
Derateꢀaboveꢀ25oC
0.7
JunctionꢀandꢀStorageꢀTemperatureꢀRange
Maximumꢀleadꢀtemperatureꢀforꢀsoldering
purpose,ꢀ1/8"ꢀfromꢀcaseꢀforꢀ5ꢀseconds
Thermal Characteristics
TJ,ꢀTSTG
TL
ꢁ55ꢀtoꢀ150
°C
300
°C
Parameter
Symbol
RθJA
Typical
Maximum
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA,D
54
ꢁ
65
0.5
1.5
MaximumꢀCaseꢁtoꢁsinkꢀA
RθCS
MaximumꢀJunctionꢁtoꢁCase
RθJC
1.2
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AOT3N60
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢂA,ꢀVGS=0V,ꢀTJ=25°C
ID=250ꢂA,ꢀVGS=0V,ꢀTJ=150°C
600
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
700
V
BVDSS
/∆TJ
V/ꢀoC
ID=250ꢂA,ꢀVGS=0Vꢀꢀ
0.65
VDS=600V,ꢀVGS=0V
VDS=480V,ꢀTJ=125°C
VDS=0V,ꢀVGS=±30V
VDS=5VꢀꢀID=250µA
VGS=10V,ꢀID=1.25A
VDS=40V,ꢀID=1.25A
IS=1A,VGS=0V
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
±100
4.5
nΑ
V
3
4
StaticꢀDrainꢁSourceꢀOnꢁResistance
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
2.9
2.8
0.64
3.5
Ω
S
VSD
1
2
8
V
IS
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
MaximumꢀBodyꢁDiodeꢀPulsedꢀCurrent
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
240
25
304
31.4
3.3
370
38
4
pF
pF
pF
Ω
VGS=0V,ꢀVDS=25V,ꢀf=1MHz
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
2.6
2.3
2.9
6.0
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
TotalꢀGateꢀCharge
9.9
2.1
4.6
17
12
3
nC
nC
nC
ns
ns
ns
ns
VGS=10V,ꢀVDS=480V,ꢀID=2A
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
6
TurnꢁOnꢀDelayTime
20
20
30
20
210
1.7
VGS=10V,ꢀVDS=300V,ꢀID=2A,
TurnꢁOnꢀRiseꢀTime
17
RG=25Ω
tD(off)
tf
TurnꢁOffꢀDelayTime
24
TurnꢁOffꢀFallꢀTime
16
trr
IF=2A,dI/dt=100A/µs,VDS=100V
IF=2A,dI/dt=100A/µs,VDS=100V
175
1.4
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
ns
Qrr
µC
A.ꢀTheꢀvalueꢀofꢀRꢀθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTꢀAꢀ=25°C.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=150°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupper
dissipationꢀlimitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C.ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C,ꢀRatingsꢀareꢀbasedꢀonꢀlowꢀfrequencyꢀandꢀdutyꢀcyclesꢀtoꢀkeepꢀinitialꢀTJ
=25°C.
D.ꢀTheꢀRꢀθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀcaseꢀRꢀθJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300ꢀµsꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassumingꢀa
maximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=150°C.ꢀTheꢀSOAꢀcurveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
G.ꢀL=60mH,ꢀIAS=2A,ꢀVDD=150V,ꢀRG=25Ω,ꢀStartingꢀTJ=25°C
THISꢀPRODUCTꢀHASꢀBEENꢀDESIGNEDꢀANDꢀQUALIFIEDꢀFORꢀTHEꢀCONSUMERꢀMARKET.ꢀAPPLICATIONSꢀORꢀUSESꢀASꢀCRITICALꢀ
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE.
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AOT3N60
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
10
10V
ꢁ55°C
VDS=40V
6.5V
6V
125°C
1
VGS=5.5V
25°C
0.1
0
5
10
15
DS (Volts)
20
25
30
2
4
6
8
10
V
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
2.5
VGS=10V
ID=1.25A
2
1.5
1
VGS=10V
0.5
0
0
1
2
3
4
5
6
ꢁ100
ꢁ50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+01
1.0E+00
1.2
1.1
1
125°C
1.0Eꢁ01
1.0Eꢁ02
1.0Eꢁ03
1.0Eꢁ04
1.0Eꢁ05
25°C
0.9
0.8
ꢁ100
ꢁ50
0
50
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TJ (°C)
VSD (Volts)
Figure 5:Break Down vs. Junction Temparature
Figure 6: Body-Diode Characteristics (Note E)
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AOT3N60
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
1000
100
10
VDS=480V
ID=2A
Ciss
Coss
6
Crss
3
0
1
0
2
4
6
8
10
12
14
0.1
1
10
100
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
10
3.0
10µs
2.5
2.0
1.5
1.0
0.5
0.0
RDS(ON)
limited
1
0.1
100µs
1ms
DC
10ms
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
0
25
50
75
100
125
150
VDS (Volts)
TCASE (°C)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT3N60 (Note F)
Figure 10: Current De-rating (Note B)
10
D=Ton/T
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
0.1
PD
Ton
T
SingleꢀPulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT3N60 (Note F)
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AOT3N60
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
GateꢀChargeꢀTestꢀCircuitꢀ&ꢀWaveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
ꢁ
ꢁ
DUT
Vgs
Vds
Ig
Charge
ResistiveꢀSwitchingꢀTestꢀCircuitꢀ&ꢀWaveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
ꢁ
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
UnclampedꢀInductiveꢀSwitchingꢀ(UIS)ꢀTestꢀCircuitꢀ&ꢀWaveforms
L
2
Eꢀꢀꢀ=ꢀ1/2ꢀLI
AR
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
ꢁ
DUT
Vgs
Vgs
DiodeꢀRecoveryꢀTestꢀCircuitꢀ&ꢀWaveforms
Qꢀꢀꢀ=ꢀꢁꢀꢀꢀIdt
Vdsꢀ+
Vdsꢀꢁ
Ig
rr
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
ꢁ
Vds
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