AOTF10B65MQ2 [AOS]
Insulated Gate Bipolar Transistor,;
| 型号： | AOTF10B65MQ2 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总8页 (文件大小：536K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOTF10B65MQ2
650V, 10A AlphaIGBT TM
With Soft and Fast Recovery Anti-Parallel Diode
General Description
Product Summary
VCE
• Latest AlphaIGBT (αIGBT) technology
• 650V breakdown voltage
650V
10A
IC (TC=100°C)
VCE(sat) (TJ=25°C)
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(sat) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
1.6V
• High short-circuit ruggedness
Applications
• Motor drives
• Sewing machines
• Home appliances
• Fan, pump, vacuum cleaner
• Other hard switching applications
TO-220F
C
E
G
C
G
E
AOTF10B65MQ2
Orderable Part Number
Package Type
Form
Tube
Minimum Order Quantity
AOTF10B65MQ2
TO220F
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOTF10B65MQ2
Units
Collector-Emitter Voltage
VCE
650
V
V
Gate-Emitter Voltage
VGE
±30
20(2)
10(2)
TC=25°C
Continuous Collector
Current
IC
A
TC=100°C
Pulsed Collector Current, Limited by TJmax
ICM
ILM
30
30
20(2)
10(2)
A
A
Turn-Off SOA, VCE≤650V, Limited by TJmax
TC=25°C
Continuous Diode
IF
A
Forward Current
TC=100°C
Diode Pulsed Current, Limited by TJmax
Short Circuit Withstanding Time (1)
VGE=15V, VCC≤400V, TJ≤150°C
IFM
tSC
30
5
A
ms
TC=25°C
Power Dissipation
30
12
PD
W
TC=100°C
Junction and Storage Temperature Range
TJ, TSTG
TL
-55 to 150
°C
°C
Maximum Lead Temperature for Soldering
Purpose, 1/8" from case for 5 seconds
300
Thermal Characteristics
Parameter
Symbol
RqJA
AOTF10B65MQ2
Units
°C/W
°C/W
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
65
4.2
RqJC
RqJC
7
°C/W
(1) Allowed number of short circuits: <1000; time between short circuits: >1s.
(2) TO220F IC follows TO220/TO263.
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Rev.1.0 December 2019
Page 1 of 8
AOTF10B65MQ2
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
IC=1mA, VGE=0V, TJ=25°C
BVCES
650
-
1.6
1.86
1.95
1.65
1.76
1.73
5.1
-
-
V
V
Collector-Emitter Breakdown Voltage
TJ=25°C
-
-
-
-
-
-
-
-
-
-
-
-
2
VCE(sat)
VGE=15V, IC=10A
Collector-Emitter Saturation Voltage
TJ=125°C
TJ=150°C
TJ=25°C
-
-
2.1
-
VF
VGE=0V, IF=10A
VCE=5V, IC=1mA
VCE=650V, VGE=0V
Diode Forward Voltage
V
V
TJ=125°C
TJ=150°C
-
VGE(th)
ICES
-
Gate-Emitter Threshold Voltage
Zero Gate Voltage Collector Current
TJ=25°C
TJ=125°C
TJ=150°C
10
100
500
±100
-
-
mA
-
VCE=0V, VGE=±30V
VCE=20V, IC=10A
IGES
gFS
-
Gate-Emitter Leakage Current
Forward Transconductance
nA
S
9
DYNAMIC PARAMETERS
Cies
Coes
Cres
Qg
Input Capacitance
-
-
-
-
-
-
655
55
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
VGE=0V, VCC=25V, f=1MHz
VGE=15V, VCC=520V, IC=10A
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
25
24
Qge
Qgc
Gate to Emitter Charge
Gate to Collector Charge
5.5
12
VGE=15V, VCC=400V,
tsc≤5us, TJ≤150°C
IC(SC)
Short Circuit Collector Current
-
-
70
-
-
A
VGE=0V, VCC=0V, f=1MHz
Rg
Gate Resistance
5.8
W
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
tD(on)
tr
tD(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
-
-
-
-
-
-
-
12
16
-
-
-
-
-
-
-
ns
ns
91
ns
TJ=25°C
VGE=15V, VCC=400V, IC=10A,
RG=30W
14
ns
Eon
Eoff
Etotal
trr
0.18
0.13
0.31
mJ
mJ
mJ
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
-
-
-
100
0.24
3.9
-
-
-
ns
TJ=25°C
Qrr
Irm
mC
Diode Reverse Recovery Charge
IF=10A, di/dt=200A/ms, VCC=400V
Diode Peak Reverse Recovery Current
A
SWITCHING PARAMETERS, (Load Inductive, TJ=150°C)
tD(on)
tr
tD(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
-
-
-
-
-
-
-
11
17
-
-
-
-
-
-
-
ns
ns
108
23
ns
TJ=150°C
VGE=15V, VCC=400V, IC=10A,
RG=30W
ns
Eon
Eoff
Etotal
trr
0.2
0.21
0.41
mJ
mJ
mJ
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
-
-
-
142
0.45
4.9
-
-
-
ns
TJ=150°C
Qrr
Irm
mC
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
IF=10A, di/dt=200A/ms, VCC=400V
A
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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Rev.1.0 December 2019
Page 2 of 8
AOTF10B65MQ2
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
20V
20V
17V
15V
13V
17V
15V
13V
11V
11V
9V
9V
VGE= 7V
VGE=7V
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
VCE (V)
VCE (V)
Figure 2: Output Characteristic
Figure 1: Output Characteristic
(Tj=150°C)
(Tj=25°C)
30
25
20
15
10
5
30
25
20
15
10
5
VCE=20V
-40°C
25°C
150°C
150°C
25°C
-40°C
0
0
3
6
9
12
15
0
1
2
3
4
VGE (V)
VF (V)
Figure 3: Transfer Characteristic
Figure 4: Diode Characteristic
5
4
3
2
1
0
3
2.5
2
20A
10A
IC=20A
IC=10A
1.5
1
5A
IF=1A
IC=5A
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Figure 6: Diode Forward voltage vs. Junction
Temperature
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Rev.1.0 December 2019
Page 3 of 8
AOTF10B65MQ2
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VCE=520V
IC=10A
Cies
Coes
6
Cres
3
0
1
0
5
10
15
20
25
30
0
8
16
24
32
40
Qg (nC)
VCE (V)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristic
40
30
20
10
0
25
50
75
100
TCASE (°C)
125
150
Figure 10: Power Disspation as a Function of Case
15
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
1E-09
12
9
VCE=650V
6
VCE=520V
3
0
25
50
75
TCASE (°C)
Figure 11: Current De-rating
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
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Rev.1.0 December 2019
Page 4 of 8
AOTF10B65MQ2
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
1000
100
10
10000
1000
100
10
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
1
1
5
8
11
14
17
20
0
50
100
150
200
250
300
Rg (W)
IC (A)
Figure 13: Switching Time vs. IC
(Tj=150°C, VGE=15V, VCE=400V, Rg=30W)
Figure 14: Switching Time vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, IC=10A)
10000
1000
100
10
7
6
5
4
3
2
1
Td(off)
Tf
Td(on)
Tr
1
25
50
75
100
125
150
0
25
50
75
100
125
150
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V, VCE=400V, IC=10A, Rg=30W)
TJ (°C)
Figure 16: VGE(th) vs. Tj
1.5
1.5
1.2
0.9
0.6
0.3
0
Eoff
Eoff
Eon
Eon
1.2
0.9
0.6
0.3
0
Etotal
Etotal
0
50
100
150
200
250
300
5
8
11
14
17
20
IC (A)
Rg (W)
Figure 17: Switching Loss vs. IC
Figure 18: Switching Loss vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, IC=10A)
(Tj=150°C, VGE=15V, VCE=400V, Rg=30W)
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Rev.1.0 December 2019
Page 5 of 8
AOTF10B65MQ2
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.5
0.4
0.3
0.2
0.1
0
0.5
0.4
0.3
0.2
0.1
0
Eoff
Eoff
Eon
Eon
Etotal
Etotal
25
50
75
100
TJ (°C)
125
150
200
250
300
350
400
450
500
VCE (V)
Figure 19: Switching Loss vs. Tj
(VGE=15V, VCE=400V, IC=10A, Rg=30W)
Figure 20: Switching Loss vs. VCE
(Tj=150°C, VGE=15V, IC=10A, Rg=30W)
1000
40
32
24
16
8
200
20
16
12
8
150°C
25°C
800
600
400
200
0
160
120
80
150°C
trr
Qrr
25°C
40
4
150°C
150°C
25°C
S
Irm
25°C
0
0
0
5
10
15
20
5
10
15
20
IF(A)
IF (A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/ms)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/ms)
200
160
120
80
10
8
600
400
200
0
40
32
24
16
8
150°C
trr
150°C
6
25°C
Qrr
25°C
4
150°C
150°C
40
2
S
Irm
25°C
25°C
0
0
0
100
200
300
400
500
600
100
200
300
400
500
600
di/dt (A/ms)
di/dt (A/ms)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V, VCE=400V, IF=10A)
(VGE=15V, VCE=400V, IF=10A)
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Rev.1.0 December 2019
Page 6 of 8
AOTF10B65MQ2
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZqJC.RqJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RqJC=4.2°C/W
1
0.1
PDM
0.01
Single Pulse
0.0001
Ton
0.001
T
0.0001
1E-06
1E-05
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
10
1
D=Ton/T
TJ,PK=TC+PDM.ZqJC.RqJC
RqJC=7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
0.001
0.0001
Single Pulse
Ton
T
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
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Rev.1.0 December 2019
Page 7 of 8
AOTF10B65MQ2
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
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Rev.1.0 December 2019
Page 8 of 8
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