AOU404L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管型号: | AOU404L |
厂家: | ALPHA & OMEGA SEMICONDUCTORS |
描述: | N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总5页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AOU404
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU404 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU404 is Pb-free (meets ROHS & Sony
259 specifications). AOU404L is a Green Product
ordering option. AOU404 and AOU404L are
electrically identical.
VDS (V) = 75V
ID = 10 A (VGS = 20V)
RDS(ON) < 130 mΩ (VGS = 20V) @ 5A
RDS(ON) < 140 mΩ (VGS = 10V)
RDS(ON) < 165 mΩ (VGS = 4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±25
V
A
TC=25°C
10
TC=100°C
ID
10
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
20
10
15
A
mJ
TC=25°C
Power Dissipation B
TC=100°C
20
PD
W
10
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
Steady-State
Steady-State
RθJA
115
140
°C/W
Maximum Junction-to-Case B
RθJC
4.5
7.5
°C/W
Alpha & Omega Semiconductor, Ltd.
AOU404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=60V, VGS=0V
75
V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
1
2.4
VGS=10V, VDS=5V
20
A
V
GS=20V, ID=5A
100
180
105
120
9
130
220
140
165
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=10V, ID=5A
VGS=4.5V, ID=2A
VDS=5V, ID=10A
IS=1A, VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.79
1
Maximum Body-Diode Continuous Current
10
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
293
51
350
3
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
20
2.2
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5.2
2.46
1
6.5
3.5
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=37.5V, ID=5A
1.34
4.6
2.3
14.7
1.7
25
VGS=10V, VDS=37.5V, RL=7.5Ω,
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
30
ns
Qrr
27
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOU404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
10
8
10V
VDS=5V
7V
6V
5V
6
125°C
4.5V
4
25°C
VGS=4V
2
0
0
2
2.5
3
3.5
VGS(Volts)
4
4.5
5
0
1
2
3
4
5
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
220
200
180
160
140
120
100
80
2.2
2
VGS=20V, 5A
VGS=10V, 5A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=4.5V, 2A
VGS=10V
VGS=20V
0.8
0
2
4
6
8
10
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
300
260
220
180
140
100
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=5A
125°C
125°C
25°C
25°C
4
6
8
10
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOU404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
350
300
250
200
150
100
50
VDS=37.5V
ID=5A
Ciss
8
6
4
Coss
2
Crss
0
0
0
2
4
6
0
5
10
15
DS (Volts)
20
25
30
Q
g (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
200
160
120
80
TJ(Max)=175°C, TA=25°C
10µs
TJ(Max)=175°C
TA=25°C
R
10.
DS(ON)
100µs
limited
1ms
10ms
DC
1.0
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=7.5°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOU404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
12
10
8
L ⋅ ID
tA
=
BV −VDD
6
4
TA=25°C
2
0
0
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
12
10
8
6
4
2
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Alpha & Omega Semiconductor, Ltd.
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