CBSL1 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管型号: | CBSL1 |
厂家: | ADVANCED SEMICONDUCTOR |
描述: | NPN SILICON RF POWER TRANSISTOR |
文件: | 总1页 (文件大小:22K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CBSL1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL1 is Designed for UHF
Class A Amplifier Applications in
Cellular Base Station Equipment.
PACKAGE STYLE .280 4L STUD
A
45°
C
FEATURES:
B
E
E
· Pg = 10 dB min. @ 960 MHz
· P1dB = 1.0 Watts min. at 960 MHz
· Omnigold™ Metalization System
B
C
D
J
E
I
F
MAXIMUM RATINGS
G
H
K
#8-32 UNC
0.25 A
40 V
IC
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
VCBO
VCEO
VEBO
PDISS
TJ
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
1.055 / 26.80
.230 /5.84
A
B
C
D
E
F
G
H
I
28 V
.285 / 7.24
.007 / 0.18
.137 / 3.48
3.5 V
.572 / 14.53
.130 / 3.30
7.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
O
.245 / 6.22
.255 / 6.48
.640 / 16.26
.175 / 4.45
.275 / 6.99
.217 / 5.51
.285 / 7.24
J
K
TSTG
ORDER CODE: ASI10577
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 1 mA
IC = 1 mA
IE = 1 mA
VCB = 24 V
VCE = 5.0 V
40
V
BVCEO
BVEBO
ICBO
25
V
3.5
V
500
120
mA
---
hFE
IC = 100 mA
ICQ = 125 mA
20
COB
VCB = 28 V
VCC = 24 V
f = 1.0 MHz
f = 960 MHz
5.0
pF
10
1.0
PG
dB
W
P1dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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