CBSL2SS [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | CBSL2SS |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBSL2SS
E
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .205 4L STUD
D
The ASI CBSL2SS is Designed for
UHF Class A Amplifier Applications in
Cellular Base Station Equipment.
A
C
FEATURES:
B
• Pg = 9.0 dB min. @ 960 MHz
• P1dB = 2.0 Watts min. at 960 MHz
• Omnigold™ Metalization System
G
E
F
H
#8-32UNC
J
MAXIMUM RATINGS
2.0 A
45 V
IC
MINIMUM
inches / mm
MAXIMUM
inches / mm
VCBO
VCER
VEBO
PDISS
TJ
DIM
.976 / 24.800
.976 / 24.800
.028 / 0.700
1.000 / 25.4000
1.000 / 25.4000
.031 / 0.800
A
B
C
D
E
F
30 V
3.5 V
.138 / 3.500
.161 / 4.100
.098 / 2.500
.200 / 5.100
.196 / 5.000
.110 / 2.800
.208 / 5.300
7.0 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
25 °C/W
G
.004 / 0.100
.425 / 10.800
.200 / 5.100
.006 / 0.150
.465 / 11.800
2.05 / 5.200
H
I
TSTG
θJC
J
ORDER CODE: ASI10868
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 1.0 mA
IC = 5.0 mA
IE = 1.0 mA
45
V
30
BVCER
BVEBO
ICBO
V
RBE = 220 Ω
IC = 100 mA
POUT = 2.0 V
3.5
V
V
CB = 28 V
CE = 5.0 V
500
120
µA
---
V
20
hFE
VCB = 24 V
f = 1.0 MHz
f = 960 MHz
3.5
COB
pF
9.0
50
PG
dB
%
VCC = 24 V
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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