CBSL100_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | CBSL100_07 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBSL100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL100 is Designed for
Class AB, Cellular Base Station
Applications up to 960 MHz.
PACKAGE STYLE .400 BAL FLG (C)
A
.080x45°
B
FULL R
(4X).060 R
FEATURES:
E
M
D
• Internal Input/Output Matching Network
• PG = 9.0 dB at 100 W/ 960 MHz
• Omnigold™ Metalization System
C
.1925
F
G
H
N
I
L
K
J
MAXIMUM RATINGS
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
25 A
60 V
IC
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
.210 / 5.33
VCBO
VCEO
VEBO
PDISS
TJ
.120 / 3.05
.380 / 9.65
.780 / 19.81
.130 / 3.30
.390 / 9.91
.820 / 20.83
30 V
.435 / 11.05
1.090 / 27.69
3.0 V
1.335 / 33.91
.003 / 0.08
.060 / 1.52
.082 / 2.08
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.100 / 2.54
.205 / 5.21
.407 / 10.34
.870 / 22.10
310 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.6 °C/W
J
K
L
.395 / 10.03
.850 / 21.59
M
N
TSTG
θJC
ORDER CODE: ASI10585
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IE = 50 mA
60
V
30
BVCEO
BVEBO
ICES
V
3.0
V
V
CE = 28 V
CE = 5.0 V
10
70
mA
---
V
IC = 3.0 A
15
hFE
9.0
PG
dB
VCE = 24 V
POUT = 100 W
ICQ = 2 X 100 mA
f = 960 MHz
-32
IMD
ηC
dBc
%
45
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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