CBSL1SL [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | CBSL1SL |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：16K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBSL1SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL1SL is Designed for
Class A, Cellular Base Staion
Applications up to 960 MHz.
PACKAGE STYLE .280 4L PILL
A
FEATURES:
E
• Class A Operation
• PG = 10 dB at 1.0 W/960 MHz
• Omnigold™ Metalization System
ØB
C
B
ØC
E
MAXIMUM RATINGS
0.250 A
40 V
IC
D
F
E
VCBO
VCEO
VEBO
PDISS
TJ
28 V
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
3.5 V
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
7.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
25 OC/W
.275 / 6.99
.004 / 0.10
.050 / 1.27
.118 / 3.00
TSTG
θJC
ORDER CODE: ASI10578
CHARACTERISTICS TC = 25 O
C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 1.0 mA
IC = 1.0 mA
IE = 1.0 mA
VCB = 24 V
VCE = 5.0 V
40
V
28
BVCEO
BVEBO
ICBO
V
3.5
V
0.5
mA
---
IC = 100 mA
20
10
120
hFE
VCB = 24 V
VCC = 24 V
f = 1.0 MHz
f = 960 MHz
5.0
COB
PG
pF
dB
ICQ = 125 mA
P
OUT = 1.0 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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