MTB020N03KM3 [CYSTEKEC]
N-Channel Enhancement Mode MOSFET;
| 型号： | MTB020N03KM3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：441K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date : 2016.02.22
Page No. : 1/9
CYStech Electronics Corp.
30V N-Channel Enhancement Mode MOSFET
MTB020N03KM3
BVDSS
ID@VGS=10V, TA=25°C
30V
7A
RDSON@VGS=10V, ID=5A
RDSON@VGS=4.5V, ID=4A
15.3mΩ(typ)
19.4mΩ(typ)
Features
• Simple drive requirement
• Small package outline
• ESD protected gate
• Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-89
MTB020N03KM3
G：Gate
G D S
S：Source
D：Drain
Ordering Information
Device
Package
SOT-89
Shipping
MTB020N03KM3-0-T2-G
1000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB020N03KM3
CYStek Product Specification
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date : 2016.02.22
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VDS
Limits
30
±20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
7
5.6
42
Continuous Drain Current @ TA=25°C, VGS=10V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=10V (Note 3)
Pulsed Drain Current (Notes 1, 2)
ID
A
IDM
PD
2
W
Maximum Power Dissipation@ TA=25℃ (Note 3)
Linear Derating Factor
0.016
W/°C
°C
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+150
Thermal Performance
Parameter
Symbol
Limit
62.5
20
Unit
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
(Note 3)
RθJA
RθJC
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
IGSS
30
1.0
-
-
-
-
-
-
2.5
10
1
25
20
26
-
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
V
±
±
-
-
-
-
-
VGS= 16V, VDS=0V
μA
VDS=30V, VGS=0V
VDS=24V, VGS=0V(Tj=70°C)
VGS=10V, ID=5A
IDSS
15.3
19.4
*RDS(ON)
*GFS
mΩ
VGS=4.5V, ID=4A
-
4.5
S
VDS=10V, ID=4A
Dynamic
Ciss
Coss
Crss
td(ON)
tr
-
-
-
-
-
-
-
450
79
60
-
-
-
-
-
-
-
pF
ns
VDS=15V, VGS=0V, f=1MHz
5.8
18.6
33.8
11.8
Ω
VDS=15V, ID=1A, VGS=10V, RG=6
td(OFF)
tf
MTB020N03KM3
CYStek Product Specification
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date : 2016.02.22
Page No. : 3/9
CYStech Electronics Corp.
Qg
Qgs
Qgd
-
-
-
11.6
1.2
3.8
-
-
-
nC
VDS=15V, ID=5A, VGS=10V
Source-Drain Diode
*IS
*ISM
*VSD
Trr
-
-
-
-
-
-
-
2.3
9.2
1.2
-
A
0.79
11
4
V
ns
nC
VGS=0V, IS=2A
VGS=0V, IF=2.3A, dIF/dt=100A/μs
Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB020N03KM3
CYStek Product Specification
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
40
10V,9V,8V,7V,6V,5V
35
30
25
20
15
10
5
4.5V
4V
0.8
0.6
0.4
3.5
I =250 A,
μ
D
VGS=0V
VGS=3V
4
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
VDS, Drain-Source Voltage(V)
5
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
VGS=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
Tj=150°C
VGS=4.5V
VGS=10V
10
0.01
0.1
1
10
100
0
4
8
12
16
20
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
2.4
270
240
210
180
150
120
90
VGS=10V, ID=5A
RDS(ON)@Tj=25°C : 15.3mΩ typ.
ID=5A
2
1.6
1.2
0.8
0.4
0
VGS=4.5V, ID=4A
RDS(ON)@Tj=25°C : 19.4mΩ typ.
60
30
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
GS, Gate-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
MTB020N03KM3
CYStek Product Specification
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
1000
100
10
Ciss
ID=1mA
Coss
Crss
0.8
0.6
0.4
I =250 A
μ
D
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
10
10
VDS=24V
8
6
4
2
VDS=15V
1
0.1
VDS=15V
Ta=25°C
Pulsed
ID=5A
0
0
0.01
2
4
6
8
10
12
14
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
100
9
8
7
6
5
4
3
2
1
0
RDSON
Limited
100μs
10
1
1ms
10ms
100ms
1s
TA=25°C, Tj=150°C
θ
0.1
VGS=10V, R JA=62.5°C/W
DC
JA
θ
TA=25°C, VGS=10V, R =62.5°C/W
Single Pulse
0.01
0.01
0.1
1
DS, Drain-Source Voltage(V)
10
100
25
50
75
100
Tj, Junction Temperature(°C)
125
150
175
V
MTB020N03KM3
CYStek Product Specification
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
40
35
30
25
20
15
10
5
50
40
30
20
10
0
VDS=10V
TJ(MAX)=150°C
TA=25°C
θ
R
JA=62.5°C/W
0
0
1
2
3
GS, Gate-Source Voltage(V)
4
5
0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
V
Transient Thermal Response Curves
1
D=0.5
0.2
JA
θ
θ
1.R JA(t)=r(t)*R
0.1
0.1
1
2.Duty Factor, D=t /t
2
JM
A
DM
3.T -T =P *Rθ (t)
JA
0.05
JA=62.5°C/W
θ
4.R
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB020N03KM3
CYStek Product Specification
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB020N03KM3
CYStek Product Specification
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB020N03KM3
CYStek Product Specification
Spec. No. : C143M3
Issued Date : 2016.01.21
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
SOT-89 Dimension
Marking:
A
2
1
3
Device Name
TYN3
Date Code
□□□□
H
C
D
B
Style: Pin 1. Gate 2. Drain 3. Source
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
Inches
Millimeters
Inches
Min. Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min. Max.
1.50 TYP
3.00 TYP
DIM
DIM
Min.
Max.
Min.
4.40
3.94
Max.
4.60
4.25
A
B
C
D
E
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
F
G
H
I
1.55 REF
1.40
0.35
1.60
0.44
2.30
0.32
2.60
0.52
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB020N03KM3
CYStek Product Specification
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