MTB020N03KN6-0-T1-G [CYSTEKEC]
N-Channel Enhancement Mode MOSFET;
| 型号： | MTB020N03KN6-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Enhancement Mode MOSFET
BVDSS
ID@VGS=10V, TA=25°C
30V
7A
MTB020N03KN6
8.8A
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=7A
RDS(ON)@VGS=4.5V, ID=5A
14.7 mΩ(typ)
18.9 mΩ(typ)
Description
The MTB020N03KN6 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
Equivalent Circuit
MTB020N03KN6
• Small package outline
• Pb-free lead plating package
• ESD protected gate
G：Gate S：Source D：Drain
Ordering Information
Device
Package
Shipping
SOT-26
MTB020N03KN6-0-T1-G
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB020N03KN6
CYStek Product Specification
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VDS
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
30
±20
8.8
VGS
TC=25 °C
7.0
TC=70 °C
TA=25 °C (Note 1)
TA=70 °C (Note 1)
ID
IDM
Continuous Drain Current
Pulsed Drain Current (Note 2, 3)
Total Power Dissipation
A
7
5.6
40
3.1
TC=25 °C
TC=70 °C
TA=25 °C
TA=70 °C
2
PD
W
2
1.25
-55~+150
Tj, Tstg
Operating Junction Temperature and Storage Temperature Range
°C
Thermal Data
Parameter
Symbol
Rth,j-c
RθJA
Value
40
62.5
Unit
°C/W
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 1)
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Electrical Characteristics (Ta=25°C, unless otherwise noted)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
ΔBVDSS/ΔTj
VGS(th)
30
-
1
-
-
-
-
-
-
-
-
-
V
V/℃
V
VGS=0V, ID=250μA
0.02
-
-
-
-
14.7
18.9
6
Reference to 25℃, ID=250μA
VDS=VGS, ID=250μA
VGS=±16V, VDS=0V
VDS=30V, VGS=0V, Tj=25℃
VDS=24V, VGS=0V, Tj=55℃
ID=7A, VGS=10V
2.5
±10
1
IGSS
μA
IDSS
5
19
25
-
*RDS(ON)
*GFS
mΩ
ID=5A, VGS=4.5V
VDS=5V, ID=5A
S
Dynamic
Ciss
-
-
-
450
79
60
-
-
-
pF
VDS=15V, VGS=0V, f=1MHz
Coss
Crss
MTB020N03KN6
CYStek Product Specification
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 3/9
CYStech Electronics Corp.
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
-
-
-
-
-
-
-
-
5.8
18.6
33.8
11.8
12.3
1.9
-
-
-
-
-
-
-
-
Ω
ns
VDS=15V, ID=1A, VGS=10V, RG=6
nC
VDS=15V, ID=7A, VGS=10V,
f=1MHz
3.5
8.8
Ω
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
2.3
9.2
1.2
-
A
0.79
8.6
3.3
V
ns
nC
IS=2.3A,VGS=0V
IF=2.3A,VGS=0V, dIF/dt=100A/μs
Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTB020N03KN6
CYStek Product Specification
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
40
10V,9V,8V,7V,6V,5V
35
30
25
20
15
10
5
4.5V
4V
0.8
0.6
0.4
I =250 A,
μ
D
VGS=3.5V
VGS=0V
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
VDS, Drain-Source Voltage(V)
4
5
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
VGS=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
VGS=4.5V
VGS=10V
Tj=150°C
10
0.01
0.1
1
10
100
0
2
4
6
8
10
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
150
120
90
60
30
0
2.4
VGS=10V, ID=7A
RDSON@Tj=25°C : 14.7mΩ typ.
ID=7A
2
1.6
1.2
0.8
0.4
0
VGS=4.5V, ID=5A
RDSON@Tj=25°C : 18.9mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB020N03KN6
CYStek Product Specification
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
1000
100
10
Ciss
ID=1mA
C
oss
0.8
0.6
0.4
Crss
I =250 A
μ
D
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
10
1
10
8
VDS=24V
VDS=15V
6
VDS=15V
4
0.1
2
Ta=25°C
Pulsed
ID=7A
12
0
0
0.01
2
4
6
8
10
14
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
100
10
9
8
7
6
5
4
3
2
1
0
RDSON
Limited
100 s
μ
1ms
10ms
1
100ms
1s
TA=25°C, Tj=150°C
VGS=10V, R JA=62.5°C/W
Single Pulse
0.1
0.01
θ
DC
JA
TA=25°C, VGS=10V, Rθ =62.5°C/W
0.1
1 10
DS, Drain-Source Voltage(V)
100
25
50
75
100
Tj, Junction Temperature(°C)
125
150
175
V
MTB020N03KN6
CYStek Product Specification
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
40
35
30
25
20
15
10
5
50
40
30
20
10
0
VDS=10V
TJ(MAX)=150°C
TA=25°C
JA=62.5°C/W
R
θ
0
0
1
2
3
GS, Gate-Source Voltage(V)
4
5
0.01
0.1
1 10
Pulse Width(s)
100
1000
V
Power Derating Curve
Power Derating Curve
4
3.6
3.2
2.8
2.4
2
2.2
2
1.8
1.6
1.4
1.2
1
Mounted on FR-4 board
²
with 1 in pad area
1.6
1.2
0.8
0.4
0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
TA, Ambient Temperature(℃)
TC, Case Temperature(℃)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
1
2
2.Duty Factor, D=t /t
JM
A
DM
JA
3.T -T =P *Rθ (t)
0.1
0.1
0.01
=62.5
4.RθJA
°C/W
0.05
0.02
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1
t , Square Wave Pulse Duration(s)
MTB020N03KN6
CYStek Product Specification
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 7/9
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTB020N03KN6
CYStek Product Specification
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 8/9
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
100°C
150°C
150°C
200°C
60-120 seconds
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
240 +0/-5 °C
260 +0/-5 °C
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB020N03KN6
CYStek Product Specification
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 9/9
CYStech Electronics Corp.
SOT-26 Dimension
Marking:
Device Name
Date Code
TYN3
□□□□
●
●
6-Lead SOT-26 Plastic
Surface Mounted Package
CYStek Package Code: N6
Style:
Pin 1. Drain
Pin 2. Drain
Pin 3. Gate
(D)
(D)
(G)
Pin 4. Source (S)
Pin 5. Drain
Pin 6. Drain
(D)
(D)
Millimeters
DIM
Inches
Min.
Millimeters
Min. Max.
Inches
DIM
Min.
Max.
Max.
0.049
0.004
0.045
0.020
0.008
0.119
Min.
0.059
0.104
Max.
0.067
0.116
A
A1
A2
b
1.050
0.000
1.050
0.300
0.100
2.820
1.250
0.100
1.150
0.500
0.200
3.020
0.041
0.000
0.041
0.012
0.004
0.111
E
E1
e
e1
L
1.500
2.650
1.700
2.950
0.950 (BSC)
0.037 (BSC)
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
c
D
θ
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB020N03KN6
CYStek Product Specification
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