MTB020N03V8-0-T6-G [CYSTEKEC]
N -Channel Enhancement Mode Power MOSFET;
| 型号： | MTB020N03V8-0-T6-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N -Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：484K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
BVDSS
MTB020N03V8
ID@VGS=10V, TA=25°C
30V
10A
18A
ID@VGS=10V, TC=25°C
14.0mΩ
17.5mΩ
VGS=10V, ID=10A
RDSON(TYP)
VGS=4.5V, ID=8A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Equivalent Circuit
Outline
DFN3×3
MTB020N03V8
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
MTB020N03V8-0-T6-G
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB020N03V8
CYStek Product Specification
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
18
11.4
10
8
72
18
V
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current *1
ID
A
IDM
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Current @ L=0.1mH, VGS=10V, VDD=15V *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TA=25℃
EAS
16.2
8
2.5
mJ
W
PD
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+150
°C
.
Note : *1 Pulse width limited by maximum junction temperature
*2. 100% tested by conditions of L=0.1mH, IAS=6A, VGS=10V, VDD=15V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
* Surface mounted on a 1 in² pad of 2oz copper.
Symbol
RθJC
RθJA
Value
16
50 *
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
ΔBVDSS/ΔTj
VGS(th)
30
-
1
-
-
-
-
-
-
-
0.02
-
-
-
-
-
V
V/℃
V
VGS=0V, ID=250μA
Reference to 25℃, ID=1mA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=24V, VGS=0V
VDS=24V, VGS=0V, Tj=125℃
ID=10A, VGS=10V
2.5
±100
1
25
18
25
-
IGSS
nA
IDSS
μA
-
14
17.5
3.8
*RDS(ON)
mΩ
ID=8A, VGS=4.5V
VDS=10V, ID=1A
*GFS
Dynamic
Ciss
S
-
-
-
-
-
-
-
492
67
49
5.8
16.6
31.2
7.6
-
-
-
-
-
-
-
pF
ns
VDS=25V, VGS=0V, f=1MHz
Coss
Crss
td(ON)
tr
td(OFF)
tf
VDS=15V, ID=1A, VGS=10V, RG=6Ω
MTB020N03V8
CYStek Product Specification
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Symbol
Min.
Typ.
Max.
Unit
nC
Test Conditions
Qg
Qgs
Qgd
-
-
-
12.6
1.8
2.7
-
-
-
VDS=15V, ID=10A, VGS=10V
Source Drain Diode
*IS
*ISM
*VSD
*Trr
Qrr
-
-
-
-
-
-
-
4
16
1.2
-
A
0.79
7.4
3
V
ns
nC
IS=2.3A,VGS=0V
IF=4A,VGS=0V, dIF/dt=100A/μs
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
unit : mm
MTB020N03V8
CYStek Product Specification
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
40
35
30
25
20
15
10
5
10V,9V,8V,7V,6V,5V,4V
3.5
V
0.8
0.6
0.4
3V
VGS=2.5V
I =250 A,
μ
D
VGS=0V
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
VDS, Drain-Source Voltage(V)
4
5
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
VGS=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
Tj=150°C
VGS=10V
VGS=4.5V
10
0.01
0.1
1
10
100
0
4
8
12
16
20
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
60
2.4
VGS=10V, ID=10A
RDSON@Tj=25°C : 14mΩ typ.
2
1.6
1.2
0.8
0.4
0
50
40
30
20
10
0
ID=8A
ID=10A
VGS=4.5V, ID=8A
RDSON@Tj=25°C : 17.5mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
GS, Gate-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
MTB020N03V8
CYStek Product Specification
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
1000
Ciss
ID=1mA
100
C
oss
0.8
0.6
0.4
Crss
I =250 A
μ
D
10
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
10
10
8
6
4
2
1
0.1
VDS=15V
VDS=15V
Ta=25°C
Pulsed
ID=10A
0
0
0.01
2
4
6
8
10
12
14
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
100
10
20
18
16
14
12
10
8
RDSON
Limited
100μs
1ms
10ms
100ms
1
1s
DC
6
TC=25°C, Tj=150°C
θ
0.1
0.01
4
VGS=10V, R JC=16°C/W
JC
θ
VGS=10V, R =16°C/W
Single Pulse
2
0
0.01
0.1
1
10
100
25
50
75
100
125
150
175
VDS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTB020N03V8
CYStek Product Specification
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Case
40
35
30
25
20
15
10
5
300
250
200
150
100
50
VDS=10V
TJ(MAX)=150°C
TC=25°C
θ
R
JC=16°C/W
0
0
0
1
2
3
GS, Gate-Source Voltage(V)
4
5
0.001
0.01
0.1 1
Pulse Width(s)
10
100
V
Transient Thermal Response Curves
1
D=0.5
JC
θ
θ
1.R JC(t)=r(t)*R
0.2
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
JC=16°C/W
θ
4.R
0.1
0.1
0.05
0.02
0.01
Single Pulse
1.E-02
0.01
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB020N03V8
CYStek Product Specification
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB020N03V8
CYStek Product Specification
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB020N03V8
CYStek Product Specification
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
DFN3×3 Dimension
Marking:
D
D
D D
B020
N03
Date
Code
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Millimeters
DIM
Inches
Millimeters
Inches
Min.
DIM
Min.
Max.
Min.
Max.
Min.
0.200
0.550
0.300
0.180
0.000
0.000
0.315
9°
Max.
0.400
0.750
0.500
0.480
0.100
0.100
0.515
13°
Max.
0.016
0.030
0.020
0.019
0.004
0.004
0.020
13°
A
A1
A2
D
0.605
0.850
0.026
0.033
b
e
L
L1
L2
L3
H
0.008
0.022
0.012
0.007
0.000
0.000
0.012
9°
0.152 REF
0.006 REF
0.000
2.900
2.300
2.900
3.150
1.535
0.050
3.100
2.600
3.100
3.450
1.935
0.000
0.114
0.091
0.114
0.124
0.060
0.002
0.122
0.102
0.122
0.136
0.076
D1
E
E1
E2
θ
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB020N03V8
CYStek Product Specification
相关型号：
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