DMN3025LSS-13 [DIODES]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | DMN3025LSS-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3025LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
Low On-Resistance
I
D max
Low Input Capacitance
V(BR)DSS
RDS(ON)max
TA = +25°C
Fast Switching Speed
20mΩ @ VGS = 10V
31mΩ @ VGS = 4.5V
7.2A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
30V
5.8A
Description
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
•
•
•
Applications
•
•
•
Backlighting
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Power Management Functions
DC-DC Converters
•
SO-8
S
D
S
S
G
D
D
D
Top View
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN3025LSS-13
SO-8
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
8
5
Logo
N3025LS
YY WW
Part no.
Xth week: 01 ~ 53
Year: “11” = 2011
1
4
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January 2013
© Diodes Incorporated
DMN3025LSS
Document number: DS35746 Rev. 3 - 2
DMN3025LSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±20
VGSS
TA = +25°C
Steady
State
7.2
5.7
A
A
ID
ID
T
A = +70°C
A = +25°C
Continuous Drain Current (Note 6) VGS = 10V
T
9.6
7.7
t<10s
TA = +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (L = 0.1mH)
3
A
A
IS
40
IDM
IAS
EAS
14.5
10.5
A
Repetitive Avalanche Energy (L = 0.1mH)
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
1.4
TA = +25°C
Total Power Dissipation (Note 5)
TA = +70°C
W
PD
RθJA
PD
0.9
87
44
1.7
Steady State
t<10s
TA = +25°C
Thermal Resistance, Junction to Ambient (Note 5)
°C/W
W
Total Power Dissipation (Note 6)
TA = +70°C
1.1
73
37
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
°C/W
°C
RθJA
t<10s
Operating and Storage Temperature Range
-55 to +150
T
J, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
30
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
±1
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.8
—
—
—
—
-
2.0
20
31
-
V
VGS(th)
VDS = VGS, ID = 250μA
14
VGS = 10V, ID = 10A
Static Drain-Source On-Resistance
mꢀ
RDS (ON)
23
V
GS = 4.5V, ID = 7.5A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
11
S
V
|Yfs|
VSD
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A
0.70
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
641
66
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate resistance
50
2.2
6
ꢀ
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
13.2
1.7
2.2
3.3
4.4
22.3
5.3
Qg
nC
ns
V
DS = 15V, ID = 10A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDD = 15V, VGS = 10V,
RG = 6ꢀ, ID = 1A
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN3025LSS
Document number: DS35746 Rev. 3 - 2
DMN3025LSS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
= 10V
GS
V
= 5V
DS
V
= 3.5V
GS
V
= 5.0V
GS
V
= 4.0V
GS
V
= 3.0V
GS
V
= 4.5V
GS
V
= 150°C
GS
V
= 125°C
GS
V
= 25°C
GS
V
= 85°C
GS
V
= 2.5V
GS
V
= -55°C
GS
0.0
0
0
0
0.5
1
1.5
2
0.5
1
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
0.05
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
V
= 4.5V
GS
0.045
0.04
T
= 150°C
A
T
= 125°C
A
0.035
0.03
T
= 85°C
A
0.025
T = 25°C
A
V
= 4.5V
GS
0.02
0.015
0.01
T
= -55°C
A
V
= 10V
GS
0.005
0.00
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
ID, DRAIN CURRENT(A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1.8
1.6
1.4
1.2
1
0.04
0.035
0.03
V
I
= 4.5V
GS
= 5A
V
I
= 4.5V
D
GS
= 5A
D
0.025
0.02
V
I
= 10V
GS
= 10A
V
I
= 10V
D
GS
= 10A
D
0.015
0.01
0.005
0
0.8
0.6
-50 -25
0
25
50
75 100 125 150
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMN3025LSS
Document number: DS35746 Rev. 3 - 2
DMN3025LSS
3
30
25
20
15
10
5
2.5
2
T
= 25°C
I
= 1mA
A
D
1.5
I
= 250µA
D
1
0.5
0
0
75
-50 -25
0
25
50
100 125 150
0
0.2
0.4
0.6
0.8
1
1.2
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
10000
1000
100
f = 1MHz
T
= 150°C
A
1000
T
= 125°C
A
C
iss
100
10
1
T
= 85°C
A
C
oss
T
= 25°C
A
C
rss
0.1
10
0
0
10
20
30
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
10
8
V
I
=15
DS
= 10A
D
6
4
2
0
0
2
4
6
8
10
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Source Voltage vs. Total Gate Charge
12
14
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© Diodes Incorporated
DMN3025LSS
Document number: DS35746 Rev. 3 - 2
DMN3025LSS
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RθJA(t) = r(t) * Rθ
RθJA = 90°C/W
JA
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1,000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
Package Outline Dimensions
SO-8
Dim
Min
-
0.10
1.30
0.15
0.3
Max
1.75
0.20
1.50
0.25
0.5
A
A1
A2
A3
b
E1
E
Gauge Plane
Seating Plane
A1
L
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
Detail ‘A’
1.27 Typ
7°~9°
h
h
L
θ
-
0.35
0.82
8°
°
45
0.62
0°
Detail ‘A’
A2
A3
A
All Dimensions in mm
b
e
D
Suggested Pad Layout
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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© Diodes Incorporated
DMN3025LSS
Document number: DS35746 Rev. 3 - 2
DMN3025LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
DMN3025LSS
Document number: DS35746 Rev. 3 - 2
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