DMP1011LFV-13 [DIODES]
P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMP1011LFV-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP1011LFV
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low RDS(ON) – Ensures On-State Losses are Minimized
ID Max
TC = +25°C
-19A
BVDSS
RDS(ON) Max
Small Form Factor Thermally Efficient Package Enables Higher
®
Density End Products (PowerDI
)
11.7mΩ @ VGS = -4.5V
18.6mΩ @ VGS = -2.5V
-12V
-15A
Occupies just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data
Backlighting
Case: PowerDI3333-8 (Type UX)
Power Management Functions
DC-DC Converters
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072grams (Approximate)
PowerDI3333-8 (Type UX)
Bottom View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP1011LFV-7
DMP1011LFV-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8 (Type UX)
PowerDI3333-8 (Type UX)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T41 = Product Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 for 2017)
WW = Week Code (01 to 53)
T41
PowerDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
DMP1011LFV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-12
Unit
V
Gate-Source Voltage
- 6
V
VGSS
TA = +25°C
-13
-10
t<10s
TA = +70°C
A
A
ID
ID
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TC = +25°C
TC = +70°C
-19
-15
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.3mH
3
A
A
IS
70
24
86
IDM
IAS
EAS
A
Avalanche Energy (Note 7) L = 0.3mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
1.05
118
83.5
2.16
57
W
PD
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
RθJA
PD
t<10s
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
40.3
11.7
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -9.6V, VGS = 0V
VGS = -6V, VDS = 0V
μA
nA
Zero Gate Voltage Drain Current (TJ = +25°C)
Gate-Source Leakage
—
-100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.6
—
—
-1.2
11.7
18.6
-1.0
V
mΩ
V
VGS(TH)
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -12A
VGS = -2.5V, ID = -9A
VGS = 0V, IS = -16A
9.8
Static Drain-Source On-Resistance
RDS(ON)
—
14.6
-0.8
Diode Forward Voltage
—
VSD
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
913
458
53
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = -6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
1.85
9.5
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -6V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
7.1
Qg
nC
ns
VDS = -6V, ID = -12A
1.4
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
1.1
Turn-On Delay Time
6.3
Turn-On Rise Time
2.6
VDS = -6V, VGS = -4.5V,
RL = 1Ω, Rg = 4.7Ω, ID =-12A
Turn-Off Delay Time
14.4
3.9
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13.5
2.5
ns
tRR
IF = -12A, dI/dt = 100A/μs
IF = -12A, dI/dt = 100A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. I and E ratings are based on low frequency and duty cycles to keep T = +25°C .
AS AS
J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
DMP1011LFV
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
VGS = -2.0V
VDS = -5V
VGS = -1.5V
VGS = -2.5V
VGS = -3.0V
VGS=-4.0V
VGS = -4.5V
TJ=125℃
TJ=85℃
TJ=25℃
VGS = -1.2V
VGS = -1.0V
TJ=150℃
TJ=-55℃
0.0
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.15
0.12
0.09
0.06
0.03
0
0.025
0.02
0.015
0.01
0.005
0
ID = -12A
VGS = -2.5V
VGS = -4.5V
ID = -9A
0
5
10
15
20
25
30
1
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
1.5
1.2
0.9
0.6
0.02
0.018
0.016
0.014
0.012
0.01
VGS = -4.5V
VGS = -2.5V, ID = -9A
125℃
85℃
150℃
VGS = -4.5V, ID = -12A
25℃
0.008
0.006
0.004
0.002
0
-55℃
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Figure 6. On-Resistance Variation with Temperature
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DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
DMP1011LFV
0.03
0.025
0.02
0.015
0.01
0.005
0
1.2
1
ID = -1mA
0.8
0.6
0.4
0.2
0
VGS = -2.5V, ID = -9A
ID = -250μA
VGS = -4.5V, ID = -12A
-50
-25
0
25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junciton
Temperature
30
25
20
15
10
5
10000
1000
100
10
TJ = 150oC
VGS = 0V
TJ = 125oC
TJ = 85oC
TJ = 85oC
TJ = 125oC
TJ = 150oC
TJ = 25oC
1
TJ = 25oC
TJ = -55oC
0.1
0
0
2
4
6
8
10
VDS, Drain-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakge Current vs. Voltage
12
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
6
5
4
3
2
1
0
1
TJ = 25oC
TJ = 85oC
VDS = -6V, ID = -12A
0.1
0.01
TJ = 125oC
TJ = 150oC
TJ = -55oC
1
2
3
4
5
6
0
2
4
6
8
10
VGS, GATE-SOURCE VOLTAGE (V)
Figure 11. Gate-Source Leakge Current vs. Voltage
Qg (nC)
Figure 12. Gate Charge
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© Diodes Incorporated
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
DMP1011LFV
100
10
RDS(ON) Limited
PW =100µs
PW =1ms
PW =10ms
PW =100ms
PW =1s
1
0.1
0.01
PW =10s
TJ(Max) = 150℃ TC = 25℃
Single Pulse
DC
DUT on 1*MRP Board
VGS= -4.5V
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
0.01
D=0.02
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 107℃/W
D=Single Pulse
0.0001
Duty Cycle, D = t1 / t2
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14.Transient Thermal Resistance
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© Diodes Incorporated
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
DMP1011LFV
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8 (Type UX)
D
D1
A
A1
PowerDI3333-8
(Type UX)
Dim
Min
Max
Typ
A
A1
b
c
D
D1
D2
E
E1
E2
E2a
E2b
e
0.75
0.00
0.25
0.10
3.20
2.95
2.30
3.20
2.95
1.60
0.95
0.10
0.85
0.05
0.40
0.25
3.40
3.15
2.70
3.40
3.15
2.00
1.35
0.30
0.65 BSC
0.90
0.80
--
E1 E
0.32
0.15
3.30
3.05
2.50
3.30
3.05
1.80
1.15
0.20
0
c
L
E2a
E2b
E2
D2
k
k
L
θ
0.50
0.30
0°
0.70
0.40
10°
L
0.50
12°
b
e
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8 (Type UX)
X3
X2
8
Y4
Dimensions Value (in mm)
X1
Y1
C
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
Y2
X
X1
X2
X3
Y
Y3
Y1
Y2
Y3
Y4
Y
1
X
C
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© Diodes Incorporated
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
DMP1011LFV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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© Diodes Incorporated
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
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