DMP1011UCB9-7 [DIODES]

Small Signal Field-Effect Transistor,;


型号：	DMP1011UCB9-7
厂家：	DIODES INCORPORATED
描述：	Small Signal Field-Effect Transistor, PC 开关晶体管
文件：	总6页 (文件大小：439K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMP1011UCB9

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary (Typ. @ V_GS= -4.5V, T_A= +25°C)

Features



LD-MOS Technology with the Lowest Figure of Merit:

-R_DS(ON)= 8.2mΩ to Minimize On-State Losses

-Q_g= 8.1nC for Ultra-Fast Switching

BV_DSS

R_DS(ON)

Q_g

Q_gd

I_D

-8V

8.2mΩ

8.1nC

1.8nC

-10A



V_GS(th)= -0.8V Typ. for a Low Turn-On Potential

CSP with Footprint 1.5mm × 1.5mm

Description

Height = 0.60mm for Low Profile

This 3^rdgeneration Lateral MOSFET (LD-MOS) is engineered to

minimize on-state losses and switch ultra-fast, making it ideal for

high-efficiency power transfer. It uses Chip-Scale Package (CSP) to

increase power density by combining low thermal impedance with

minimal R_DS(ON)per footprint area.

ESD = 6kV HBM Protection of Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

Applications



Case: U-WLB1515-9 (Type B)



DC-DC Converters

Battery Management

Load Switch

Terminal Connections: See Diagram Below

U-WLB1515-9 (Type B)

Top View

Pin Configuration

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMP1011UCB9-7

Case

Packaging

3,000/Tape & Reel

U-WLB1515-9 (Type B)

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

U-WLB1515-9 (Type B)

NX = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: E = 2017)

M or M = Month (ex: 9 = September)

Date Code Key

Year

2012

2013

2014

2015

2016

2017

2018

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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September 2017

DMP1011UCB9

Document number: DS37852 Rev. 3 - 2

DMP1011UCB9

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-8

Unit

Gate-Source Voltage

-6

V_GSS

Steady

State

T_A= +25°C

T_A= +70°C

T_A= +25°C

T_A= +70°C

-10

-8

Continuous Drain Current (Note 5) V_GS= -4.5V

Continuous Drain Current (Note 6) V_GS= -4.5V

I_D

Steady

State

-7.4

-6.0

Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%)

Continuous Source Pin Current (Note 6)

Pulsed Source Pin Current (Pulse Duration 10µs, Duty Cycle ≤1%)

-50

-2

-15

I_DM

ISM

-0.5

I_G

Continuous Gate Current

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Total Power Dissipation (Note 5)

Symbol

Value

0.89

1.57

Unit

P_D

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

142.1

°C/W

°C

R_θJA

80.5

R_θJA

-55 to +150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

—

-8

—

BV_DSS

BV_SGS

V_GS= 0V, I_D= -250μA

V_DS= 0V, I_S= 250μA

Gate to Source Voltage

-1

μA

Zero Gate Voltage Drain Current

@T_C= +25°C

I_DSS

I_GSS

V_DS= -4.0V, V_GS= 0V

V_GS= -4.0V, V_DS= 0V

—

-0.4

—

Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-100

-0.8

8.2

-1.1

—

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= -250μA

V_GS= -4.5V, I_D= -2A

V_GS= -3.0V, I_D= -2A

V_GS= -2.5V, I_D= -2A

V_DS= -4V, I_D= -2A

V_GS= 0V, I_S= -2A

Static Drain-Source On-Resistance

mΩ

—

Forward Transfer Admittance

Diode Forward Voltage (Note 6)

Reverse Recovery Charge

Reverse Recovery Time

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

16.8

-0.7

6.3

|Y_fs|

V_SD

Q_RR

t_RR

-1

—

V_DD= -5V, I_F= -2A,

di/dt = 200A/μs

18.5

—

817

595

269

1.9

1,060

770

350

—

C_iss

C_oss

C_rss

R_G

V_DS= -4V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Series Gate Resistance

Total Gate Charge

V_DS= 0V, V_GS= 0V, f = 1.0MHz

8.1

10.5

—

Q_g

V_GS= -4.5V, V_DS= -4V,

I_D= -2A

0.9

Gate-Source Charge

Q_gs

Q_gd

t_D(ON)

t_R

1.8

—

Gate-Drain Charge

6.2

Turn-On Delay Time

22.6

30.1

22.7

—

Turn-On Rise Time

V_DD= -4V, V_GS= -4.5V,

I_DS= -2A, R_G= 10Ω

Turn-Off Delay Time

t_D(OFF)

t_F

—

Turn-Off Fall Time

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Device mounted on FR-4 material with 1-inch²(6.45cm²), 2oz (0.071mm thick) Cu.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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September 2017

DMP1011UCB9

Document number: DS37852 Rev. 3 - 2

DMP1011UCB9

20.0

18.0

16.0

14.0

12.0

10.0

8.0

= -5.0V

= -4.5V

= -4.0V

= -2.5V

= -2.0V

= -1.5V

= 150C

= 125C

= 85C

= 25C

6.0

= -55C

4.0

2.0

= -1.2V

= -1.0V

0.0

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

V_DS, DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

0.5

1.5

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

0.1

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

2.5

= -2.5V

= -1A

1.5

= -2.0A

= -4.5V

= -3A

0.5

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (C)

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 4 On-Resistance Variation with Temperature

Figure 3 Typical Transfer Characteristic

0.8

0.6

0.4

0.2

-I = 250

礎

-I = 1mA

= 150C

= 125C

= 85C

= 25C

= -55C

0.3

0.6

0.9

1.2

1.5

-50 -25

75 100 125 150

V_SD, SOURCE-DRAIN VOLTAGE (V)

T , AMBIENT TEMPERATURE (

癈

)

(°C)

Figure 6 Diode Forward Voltage vs. Current

Figure 5 Gate Threshold Variation

vs. Ambient Temperature

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September 2017

DMP1011UCB9

Document number: DS37852 Rev. 3 - 2

DMP1011UCB9

10000

1000

100

4.5

f = 1MHz

3.5

iss

= -4V

= -2A

oss

2.5

rss

1.5

0.5

Q_g, TOTAL GATE CHARGE (nC)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 7 Typical Junction Capacitance

Figure 8 Gate-Charge Characteristics

100

DS(on)

Limited

= 10s

= 1s

= 100ms

= 10ms

= 1ms

= 100

祍

100µs

0.1

0.01

T_J(max)= 150

癈

150°C

T_A= 25

癈

25°C

V_GS

-4 V

= 4 V

.5.5

Single Pulse

DUT on 1 * MRP Board

0.1

0.01

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9 SOA, Safe Operation Area

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

0.01

R_JA(t) = r(t) * R_JA

R_JA= 1

Duty Cycle, D = t1/ t2

138°C/W

38癈 /W

Single Pulse

0.001

0.0001

0.001

0.01

0.1

100

1000

10000

t1, PULSE DURATION TIME (sec)

t1, PULSE DURATION TIMES (sec)

Figure 10 Transient Thermal Resistance

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September 2017

DMP1011UCB9

Document number: DS37852 Rev. 3 - 2

DMP1011UCB9

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-WLB1515-9 (Type B)

9x-Ø b

Pin #1 ID

U-WLB1515-9

(Type B)

Min Max

Dim

Typ

0.60

0.36

0.020 0.030 0.025

0.22

1.47

0.32

1.50

0.27

1.49

0.50

All Dimensions in mm

SEATING PLANE

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-WLB1515-9 (Type B)

Value

(in mm)

Dimensions

0.50

1.00

0.25

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September 2017

DMP1011UCB9

Document number: DS37852 Rev. 3 - 2

DMP1011UCB9

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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September 2017

DMP1011UCB9

Document number: DS37852 Rev. 3 - 2

DMP1011UCB9-7 [DIODES]

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