DMP1012UCB9-7 [DIODES]

Small Signal Field-Effect Transistor;


型号：	DMP1012UCB9-7
厂家：	DIODES INCORPORATED
描述：	Small Signal Field-Effect Transistor
文件：	总6页 (文件大小：229K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMP1012UCB9

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary (Typ. @ V_GS= -4.5V, T_A= +25°C)

Features

•

LD-MOS Technology with the Lowest Figure of Merit:

R_DS(on)= 8.2mΩ to Minimize On-State Losses

Q_g= 8.1nC for Ultra-Fast Switching

V_DSS

R_DS(on)

Q_g

Q_gd

I_D

-8V

8.2mΩ

8.1nC

1.8nC

-10A

•

V_gs(th)= -0.8V typ. for a Low Turn-On Potential

CSP with Footprint 1.5mm × 1.5mm

Description

Height = 0.62mm for Low Profile

This 3^rdgeneration Lateral MOSFET (LD-MOS) is engineered to

minimize on-state losses and switch ultra-fast, making it ideal for high

efficiency power transfer. It uses Chip-Scale Package (CSP) to

increase power density by combining low thermal impedance with

minimal R_DS(on)per footprint area.

ESD = 6kV HBM Protection of Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

Applications

•

Case: U-WLB1515-9

•

DC-DC Converters

Battery Management

Load Switch

Terminal Connections: See Diagram Below

U-WLB1515-9

Top-View

Pin Configuration

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMP1012UCB9-7

Case

U-WLB1515-9

Packaging

3,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

U-WLB1515-9

XW = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: B = 2014)

M or M = Month (ex: 9 = September)

Date Code Key

Year

Code

2012

2013

2014

2015

2016

2017

2018

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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January 2015

DMP1012UCB9

Document number: DS36844 Rev. 7 - 2

DMP1012UCB9

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-8

Units

Gate-Source Voltage

-6

V_GSS

Steady

State

T_A= +25°C

T_A= +70°C

T_A= +25°C

T_A= +70°C

-10

-8

Continuous Drain Current (Note 5) V_GS= -4.5V

Continuous Drain Current (Note 6) V_GS= -4.5V

I_D

Steady

State

-7.4

-6.0

I_D

Pulsed Drain Current (Pulse duration 10µs, duty cycle ≤1%)

Continuous Source Pin Current (Note 6)

-50

-2



I_DM

Pulsed Source Pin Current (Pulse duration 10µs, duty cycle 1%)

Continuous Gate Current

-15

-0.5

I_G

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Total Power Dissipation (Note 5)

Symbol

Value

Units

0.89

1.57

P_D

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

+142.1

+80.5

°C/W

°C

R_θJA

-55 to +150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Gate to Source Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

—

-8

-6

—

BV_DSS

BV_SGS

I_DSS

V_GS= 0V, I_D= -250µA

V_DS= 0V, I_G= -250µA

V_DS= -4.0V, V_GS= 0V

V_GS= -4.0V, V_DS= 0V

-1

µA

Zero Gate Voltage Drain Current

Gate-Source Leakage

@T_C= +25°C

-100

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.4

—

-0.8

8.2

-1.1

—

V_GS(th)

V_DS= V_GS, I_D= -250µA

V_GS= -4.5V, I_D= -2A

V_GS= -3.0V, I_D= -2A

V_GS= -2.5V, I_D= -2A

V_DS= -4V, I_D= -2A

V_GS= 0V, I_S= -2A

Static Drain-Source On-Resistance

mΩ

R_{DS (ON)}

—

Forward Transfer Admittance

Diode Forward Voltage (Note 6)

Reverse Recovery Charge

Reverse Recovery Time

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

16.8

-0.7

6.3

|Y_fs|

V_SD

Q_rr

t_rr

-1

—

V_dd= -5V, I_F= -2A,

di/dt = 200A/µs

18.5

—

817

595

269

1.9

1060

770

350

—

Ω

C_iss

C_oss

C_rss

R_G

V_DS= -4V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Series Gate Resistance

Total Gate Charge (4.5V)

Gate-Source Charge

V_DS= 0V, V_GS= 0V, f = 1.0MHz

8.1

10.5

—

Q_g

V_GS= -4.5V, V_DS= -4V,

I_D= -2A

0.9

Q_gs

Q_gd

t_D(on)

t_r

1.8

—

Gate-Drain Charge

6.2

Turn-On Delay Time

22.6

30.1

22.7

—

Turn-On Rise Time

V_DD= -4V, V_GS= -4.5V,

Turn-Off Delay Time

I_DS= -2A, R_G= 10Ω,

t_D(off)

t_f

—

Turn-Off Fall Time

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Device mounted on FR4 material with 1-inch²(6.45cm²), 2oz (0.071mm thick) Cu.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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January 2015

DMP1012UCB9

Document number: DS36844 Rev. 7 - 2

DMP1012UCB9

20.0

18.0

16.0

14.0

12.0

10.0

8.0

= -5.0V

= -4.5V

= -4.0V

= -2.5V

= -2.0V

= -1.5V

= 150°C

= 125°C

= 85°C

= 25°C

6.0

= -55°C

4.0

2.0

= -1.2V

= -1.0V

0.0

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

0.5

1.5

V_DS, DRAIN -SOURCE VOLTAGE (V)

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

Figure 2 Typical Transfer Characteristics

0.1

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

2.5

= -2.5V

= -1A

1.5

= -2.0A

= -4.5V

= -3A

0.5

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 4 On-Resistance Variation with Temperature

75 100 125 150

2 4

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 3 Typical Transfer Characteristic

0.8

0.6

0.4

0.2

-I = 250µA

-I = 1mA

= 150°C

= 125°C

= 85°C

= 25°C

= -55°C

0.3

0.6

0.9

1.2

1.5

-50 -25

75 100 125 150

V_SD, SOURCE-DRAIN VOLTAGE (V)

T_A, AMBIENT TEMPERATURE (°C)

Figure 6 Diode Forward Voltage vs. Current

Figure 5 Gate Threshold Variation

vs. Ambient Temperature

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January 2015

DMP1012UCB9

Document number: DS36844 Rev. 7 - 2

DMP1012UCB9

10000

1000

100

4.5

f = 1MHz

3.5

iss

= -4V

= -2A

oss

2.5

rss

1.5

0.5

Q_g, TOTAL GATE CHARGE (nC)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 7 Typical Junction Capacitance

Figure 8 Gate-Charge Characteristics

100

DS(on)

Limited

= 10s

= 1s

= 100ms

= 10ms

= 1ms

= 100µs

0.1

0.01

T_J(max)= 150°C

T_A= 25°C

V_GS= 4.5V

Single Pulse

DUT on 1 * MRP Board

0.01

0.1

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9 SOA, Safe Operation Area

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

0.01

R_θJA(t) = r(t) * R_θ

R_θJA= 138°C/W

Single Pulse

Duty Cycle, D = t1/ t2

0.001

0.0001

0.001

0.01

0.1

t1, PULSE DURATION TIMES (sec)

100

1000

10000

Figure 10 Transient Thermal Resistance

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January 2015

DMP1012UCB9

Document number: DS36844 Rev. 7 - 2

DMP1012UCB9

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

6X-Ø b

PIN ID

U-WLB1515-9

Dim Min

Max

0.62

0.36

Typ

0.36

A3 0.020 0.030 0.025

0.27

0.37

0.32

1.47

1.49

1.47

1.49

0.50

All Dimensions in mm

SEATING PLANE

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Value

(in mm)

Dimensions

0.50

1.00

0.25

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January 2015

DMP1012UCB9

Document number: DS36844 Rev. 7 - 2

DMP1012UCB9

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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January 2015

DMP1012UCB9

Document number: DS36844 Rev. 7 - 2

DMP1012UCB9-7 [DIODES]

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