EC736007 [E-CMOS]
-50V, -130mA P-Channel MOSFET;
| 型号： | EC736007 |
| 厂家： | 
E-CMOS Corporation |
| 描述： | -50V, -130mA P-Channel MOSFET |
| 文件： | 总5页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC736007
-50V、-130mA P-Channel MOSFET
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance. These features
combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets
and a wide variety of other applications
Features and Benefits:
ꢀ Advanced MOSFET process technology
ꢀ Special designed for Line current interrupter in
telephone sets, Relay, high speed and line
transformer drivers and general purpose
applications
ꢀ Ultra low on-resistance with low gate charge
ꢀ Fast switching and reverse body recovery
6007
ꢀ 150℃ operating temperature
Main Product Characteristics
Marking and assigment
SOT-23
Schematic diagram
-50V
V
DSS
2.1ohm(typ.)
-130mA
R
DS(on)
I
D
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Symbol
@ TC = 25°C
Parameter
Continuous Drain Current, V GS @ -10V①
Max.
-130
-100
-520
230
-50
Units
I
I
I
P
V
V
D
mA
D
@ TC = 100°C Continuous Drain Current, VGS @ -10V①
DM
Pulsed Drain Current②
Power Dissipation ③
Drain-Source Voltage
Gate-to-Source Voltage
ESD Rating (HBM module)
Operating Junction and Storage Temperature
Range
D
@TC = 25°C
mW
V
V
DS
GS
± 20
1
ESD
KV
T
J
T
STG
-55 to + 150
°C
Thermal Resistance
Symbol
Characterizes
Junction-to-ambient(t≤10s) ④
Junction-to-Ambient (PCBmounted, steady-state) ④
Typ.
—
—
Max.
556
540
Units
℃/W
℃/W
R
θJA
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
5D16-Rev.F001
EC736007
-50V、-130mA P-Channel MOSFET
Electrical Characteristics (TA=25℃ unless otherwise noted)
Symbol
Parameter
Min.
-50
—
-0.8
—
Typ.
—
2.1
—
Max.
—
7
-2
-0.1
-1
Units
Conditions
GS = 0V, I = -10ꢀA
GS=-10V,I = -130mA
DS = VGS, I = -1mA
DS =-40V,VGS = 0V
DS =-50V,VGS = 0V
V(BR)DSS Drain-to-Source breakdown voltage
V
ꢁ
V
V
V
V
V
V
D
R
V
DS(on)
GS(th)
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
D
D
—
IDSS
ꢀA
T
V
V
V
V
V
J
= 125°C
GS =20V
GS = -20V
DS =-25 V ,I
GS = 0;
—
—
—
50
—
—
—
—
—
—
—
—
—
—
-50
10
-10
—
—
—
—
—
—
—
Gate-to-Source forward leakage
I
GSS
uA
S
gfs
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
—
D =-130m A
Ciss
Coss
Crss
td(on)
tr
45
18
11
3.1
1.3
18
7.5
pF
DS = -5 V;
f = 1 MHz
VDD = –15V;
ns
ID = –2.5 A;
td(off)
tf
Turn–Off Delay Time
Fall Time
RL = 50ohm
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
130
mA
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
I
SM
—
—
—
—
520
-1.3
mA
V
V
SD
IS=-130mA, VGS=0V
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 5
5D16-Rev.F001
EC736007
-50V、-130mA P-Channel MOSFET
Typical Electrical and Thermal Characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 5
5D16-Rev.F001
EC736007
-50V、-130mA P-Channel MOSFET
Ordering and Marking Information
EC736007 XX X
R：Tape & Reel
B1＝SOT23 3L
Part Number
Package
Marking
SOT23-3L
EC736007B1R
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 5
5D16-Rev.F001
EC736007
-50V、-130mA P-Channel MOSFET
SOT23-3L Package Outline Dimension
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 5
5D16-Rev.F001
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