EC736014AT [E-CMOS]
60V 60A N-Channel;
| 型号： | EC736014AT |
| 厂家： | 
E-CMOS Corporation |
| 描述： | 60V 60A N-Channel |
| 文件： | 总6页 (文件大小：487K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC736014
60V 、60A N-Channel
Description
The EC736014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability and electrical parameter repeatability. EC736014 is assembled
in high reliability and qualified assembly house.
Features and Benefits
ꢀ Advanced trench process technology
ꢀ avalanche energy, 100% test
ꢀ Fully characterized avalanche voltage and current
Application
ꢀPower switching application
Absolute Maximum Ratings
Parameter
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current ①
Power dissipation
Linear derating factor
Max.
60
42
240
115
0.74
±20
235
TBD
Units
ID@Tc=25ْC
ID@Tc=100ْC
IDM
PD@TC=25ْC
PD@TC=25ْC
VGS
EAS
EAR
TJ
A
W
W/ Cْ
V
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
mJ
–55 to +175
Cْ
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Min.
—
Typ.
Max.
—
Units
R
θJC
θJA
Junction-to-case
1.31
℃/W
R
Junction-to-ambient
—
—
62
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
6B18N-Rev.F001
EC736014
60V 、60A N-Channel
Electrical Characteristics @TJ=25ْC (unless otherwise specified)
Parameter
Min.
60
Typ.
—
Max.
—
Units
Test Conditions
VGS=0V,ID=250ꢀA
VGS=10V,ID=30A
VDS=VGS,ID=250ꢀA
VDS=5V,ID=30A
VDS=60V,VGS=0V
VDS=60V,
BVDSS
RDS(on)
VGS(th)
gfs
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
V
mꢁ
V
—
12
14
4.0
—
2.0
—
Forward transconductance
60
—
S
—
2
ꢀA
IDSS
Drain-to-Source leakage current
—
—
10
ꢀA
VGS=0V,TJ=150ْC
VGS=20V
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
Total gate charge
—
—
—
—
—
—
—
45
4
100
-100
—
nA
nA
IGSS
VGS=-20V
ID=30A
Qg
nC
nS
pF
Qgs
Qgd
Gate-to-Source charge
—
VDD=30V
VGS=10V
Gate-to-Drain("Miller") charge
15
—
td(on)
Turn-on delay time
—
14.6
—
VDD=30V
ID=2A ,RL=15ꢁ
RG=2.5ꢁ
VGS=10V
VGS=0V
tr
Rise time
—
—
—
—
—
—
14.2
40
—
—
—
—
—
—
td(off)
tf
Turn-Off delay time
Fall time
7.3
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
1480
190
135
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
Min.
Typ.
Max.
Units
Test Conditions
MOSFET symbol
showing the
IS
—
—
60
A
integral reverse
ISM
—
—
240
p-n junction diode.
TJ=25Cْ ,IS=40A,VGS=0V ③
TJ=25ْC,IF=60A
VSD
trr
Qrr
ton
—
—
—
—
33
61
1.3
—
—
V
nS
nC
di/dt=100A/ꢀs ③
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 30V,Id=37A
③
Pulse width≤300ꢀS, duty cycle≤1.5% ; RG = 25ꢁ Starting TJ = 25°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
6B18N-Rev.F001
EC736014
60V 、60A N-Channel
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 6
6B18N-Rev.F001
EC736014
60V 、60A N-Channel
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 6
6B18N-Rev.F001
EC736014
60V 、60A N-Channel
Ordering and Marking Information
EC736014 X X
T：Tube
TO220＝A
Part Number
EC736014AT
Package
TO220
Marking
Marking Information
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 6
6B18N-Rev.F001
EC736014
60V 、60A N-Channel
Package Outline Dimension
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 6
6B18N-Rev.F001
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