DBFS35R12YT320 [ETC]
IGBT Module ; IGBT模块\n
| 型号： | DBFS35R12YT320 |
| 厂家： | 
ETC |
| 描述： | IGBT Module
|
| 文件： | 总7页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Technische Information / technical information
IGBT-Module
IGBT-modules
FS35R12YT3
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C
T† = 25°C
I† ÒÓÑ
I†
35
40
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms, T† = 80°C
T† = 25°C
I†ç¢
PÚÓÚ
70
A
W
V
Gesamt-Verlustleistung
total power dissipation
225
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
+/-20
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 35 A, V•Š = 15 V, TÝÎ = 25°C
I† = 35 A, V•Š = 15 V, TÝÎ = 125°C
V†Š ÙÈÚ
1,70 2,15
1,90
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 1,50 mA, V†Š = V•Š, TÝÎ = 25°C
V•ŠÚÌ
Q•
5,0
5,8
0,34
6,0
6,5
V
µC
Â
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
2,50
0,09
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 125°C
tÁ ÓÒ
tØ
0,085
0,09
µs
µs
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 125°C
0,02
0,03
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 125°C
tÁ ÓËË
tË
0,42
0,52
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 125°C
0,075
0,12
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 35 A, V†Š = 600 V, L» = 40 nH
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓÒ = 22 Â, TÝÎ = 125°C
EÓÒ
EÓËË
2,65
3,50
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 35 A, V†Š = 600 V, L» = 40 nH
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 25°C
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 125°C
2,65
4,00
mJ
mJ
Kurzschlußverhalten
SC data
t« ù 10 µs, V•Š ù 15 V
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
140
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
RÚ̆™
0,55 0,62 K/W
0,40 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2003-5-7
revision: 2.0
1
Technische Information / technical information
IGBT-Module
IGBT-modules
FS35R12YT3
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
IŒ
1200
35
V
A
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
t« = 1 ms
IŒç¢
I²t
70
A
repetitive peak forward current
Grenzlastintegral
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
I²t - value
390
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 35 A, V•Š = 0 V, TÝÎ = 25°C
IŒ = 35 A, V•Š = 0 V, TÝÎ = 125°C
VŒ
Iç¢
QØ
1,65 2,10
1,65
V
V
Rückstromspitze
peak reverse recovery current
IŒ = 35 A, - diŒ/dt = 2100 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
65,0
63,0
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 35 A, -diŒ/dt = 2100 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
3,80
6,80
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 35 A, -diŒ/dt = 2100 A/µs
Vç = 600 V, V•Š = -15 V, TÝÎ = 25°C
Vç = 600 V, V•Š = -15 V, TÝÎ = 125°C
EØþÊ
1,40
2,70
mJ
mJ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
1,05 1,20 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
0,50
K/W
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Nennwiderstand
rated resistance
min. typ. max.
5,00
T† = 25°C
Rèë
ÆR/R
Pèë
kÂ
%
Abweichung von Ræåå
deviation of Ræåå
T† = 100°C, Ræåå = 493 Â
T† = 25°C
-5
5
Verlustleistung
power dissipation
20,0 mW
K
B-Wert
B-value
Rè = Rèë exp [Bèëõëå(1/Tè - 1/(298, 15K))]
Bèëõëå
3375
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2003-5-7
revision: 2.0
2
Technische Information / technical information
IGBT-Module
IGBT-modules
FS35R12YT3
Vorläufige Daten
preliminary data
Modul / module
Isolations-Prüfspannung
RMS, f = 50 Hz, t = 1 min
insulation test voltage
Vš»¥¡
2,5
kV
Material für innere Isolation
material for internal insulation
AlèOé
Kriechstrecke
creepage distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
13,5
7,50
mm
mm
Luftstrecke
clearance distance
Kontakt - Kühlkörper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
12,0
7,50
Vergleichszahl der Kriechwegbildung
comparative tracking index
CTI
LÙ†Š
> 225
min. typ. max.
35
Modulinduktivität
stray inductance module
nH
Modulleitungswiderstand,
Anschlüsse - Chip
module lead resistance,
terminals - chip
T† = 25°C, pro Zweig / per arm
R††óôŠŠó
4,00
mÂ
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
TÝÎ ÑÈà
TÝÎ ÓÔ
TÙÚÃ
F
150
°C
°C
°C
N
Temperatur im Schaltbetrieb
temperature under switching conditions
-40
-40
40
125
125
80
Lagertemperatur
storage temperature
Anpreßkraft für mech. Bef. pro Feder
mountig force per clamp
-
Gewicht
weight
G
36
g
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2003-5-7
revision: 2.0
3
Technische Information / technical information
IGBT-Module
IGBT-modules
FS35R12YT3
Vorläufige Daten
preliminary data
Ausgangskennlinie IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
V•Š = 15 V
TÝÎ = 125°C
70
70
63
56
49
42
35
28
21
14
7
TÝÎ = 25°C
TÝÎ = 125°C
63
56
49
42
35
28
21
14
7
V•Š = 19V
V•Š = 17V
V•Š = 15V
V•Š = 13V
V•Š = 11V
V•Š = 9V
0
0
0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0
V†Š [V]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
V†Š [V]
Übertragungscharakteristik IGBT-Wechselr. (typisch)
transfer characteristic IGBT-inverter (typical)
I† = f (V•Š)
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-inverter (typical)
EÓÒ = f (I†), EÓËË = f (I†)
V†Š = 20 V
V•Š = ±15 V, R•ÓÒ = 22 Â, R•ÓËË = 22 Â, V†Š = 600 V,
TÝÎ = 125°C
70
7,5
7,0
63
56
49
42
35
28
21
14
7
TÝÎ = 25°C
TÝÎ = 125°C
EÓÒ
EÓËË
6,5
6,0
5,5
5,0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
0
5
6
7
8 9
V•Š [V]
10
11
12
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
I† [A]
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2003-5-7
revision: 2.0
4
Technische Information / technical information
IGBT-Module
IGBT-modules
FS35R12YT3
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 35 A, V†Š = 600 V, TÝÎ = 125°C
10
10
9
8
7
6
5
4
3
2
1
0
EÓÒ
EÓËË
ZÚÌœ™ : IGBT
1
0,1
i:
rÍ[K/W]: 0,057
1
2
0,19
3
0,532
0,0007387 0,02047 0,1469375 0,2514298
4
0,171
τÍ[s]:
0,01
0,001
0
20
40
60
R• [Â]
80
100
120
140
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 22 Â, TÝÎ = 125°C
77
70
63
56
49
42
35
28
21
70
65
TÝÎ = 25°C
TÝÎ = 125°C
60
55
50
45
40
35
30
25
20
15
10
5
14
I†, Modul
I†, Chip
7
0
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0
0,5
1,0
1,5
VΠ[V]
2,0
2,5
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2003-5-7
revision: 2.0
5
Technische Information / technical information
IGBT-Module
IGBT-modules
FS35R12YT3
Vorläufige Daten
preliminary data
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (IŒ)
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
EØþÊ = f (R•)
R•ÓÒ = 22 Â, V†Š = 600 V, TÝÎ = 125°C
IŒ = 35 A, V†Š = 600 V, TÝÎ = 125°C
3,5
3,5
EØþÊ
EØþÊ
3,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
IΠ[A]
0
20
40
60
R• [Â]
80
100
120
140
Transienter Wärmewiderstand Diode-Wechselr.
transient thermal impedance diode-inverter
ZÚÌœ† = f (t)
NTC-Temperaturkennlinie (typisch)
NTC-temperature characteristic (typical)
R = f (T)
10
100000
ZÚÌœ† : Diode
RÚáÔ
1
10000
1000
100
0,1
i:
rÍ[K/W]: 0,093
τÍ[s]:
1
2
0,31
3
0,868
0,00049 0,0114745 0,123625 0,188455
4
0,279
0,01
0,001
0,01
0,1
t [s]
1
10
0
20
40
60
80
T† [°C]
100 120 140 160
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2003-5-7
revision: 2.0
6
Technische Information / technical information
IGBT-Module
IGBT-modules
FS35R12YT3
Vorläufige Daten
preliminary data
Schaltplan / circuit diagram
ϑ
Gehäuseabmessungen / package outlines
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2003-5-7
revision: 2.0
7
相关型号：
©2020 ICPDF网 联系我们和版权申明