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IRGP4660D-E [ETC]

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE;
IRGP4660D-E
型号： IRGP4660D-E
厂家： ETC    ETC
描述：

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

软恢复二极管 快速软恢复二极管
文件： 总12页 (文件大小：348K)
中文：  中文翻译
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IRGP4660DPbF  
IRGP4660D-EPbF  
INSULATEDGATEBIPOLARTRANSISTORWITH  
ULTRAFAST SOFT RECOVERY DIODE  
VCES = 600V  
C
C
C
IC = 60A, TC = 100°C  
tSC 5μs, TJ(max) = 175°C  
VCE(on) typ. = 1.60V @ IC = 48A  
G
E
E
C
C
G
G
E
TO-247AC  
IRGP4660DPbF  
TO-247AD  
n-channel  
IRGP4660D-EP  
Applications  
• Industrial Motor Drive  
• Inverters  
G
Gate  
C
E
Collector  
Emitter  
• UPS  
• Welding  
Features  
Benefits  
High efficiency in a wide range of applications and switching  
frequencies  
Low VCE(ON) and Switching Losses  
Improved reliability due to rugged hard switching performance  
and higher power capability  
Square RBSOA and Maximum Junction Temperature 175°C  
Positive VCE (ON) Temperature Coefficient  
Excellent current sharing in parallel operation  
5μs short circuit SOA  
Lead-Free, RoHS compliant  
Enables short circuit protection scheme  
Environmentally friendly  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable part number  
Quantity  
IRGP4660DPbF  
IRGP4660D-EPbF  
TO-247AC  
TO-247AD  
Tube  
Tube  
25  
25  
IRGP4660DPbF  
IRGP4660D-EPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
Units  
VCES  
Collector-to-Emitter Voltage  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
Continuous Collector Current  
100  
Continuous Collector Current  
60  
Pulse Collector Current, VGE = 15V  
Clamped Inductive Load Current, VGE = 20V  
Diode Continous Forward Current  
Diode Continous Forward Current  
Diode Maximum Forward Current  
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
144  
I
192  
A
LM  
IF @ TC = 25°C  
100  
IF @ TC = 100°C  
60  
IFM  
192  
VGE  
±20  
V
±30  
PD @ TC = 25°C  
330  
W
PD @ TC = 100°C  
Maximum Power Dissipation  
170  
TJ  
Operating Junction and  
-55 to +175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.24  
–––  
Max.  
0.45  
0.92  
–––  
Units  
Junction-to-Case (IGBT)  
Junction-to-Case (Diode)  
R(IGBT)  
°C/W  
JC  
R(Diode)  
JC  
R  
Case-to-Sink (flat, greased surface)  
CS  
R  
Junction-to-Ambient (typical socket mount)  
40  
JA  
www.irf.com © 2012 International Rectifier  
January 8, 2013  
1
IRGP4660DPbF/IRGP4660D-EPbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)CES  
600  
—
—
—
—
4.0  
—
—
—
—
—
—
—
—
0.30  
1.60  
1.90  
2.00  
—
—
—
V
VGE = 0V, IC = 150μA  
Col lector-to-E mi tter B reakdown Voltage  
T emperature Coeff. of B reakdown Voltage  
   
V(BR)CES/ T J  
V/°C VGE = 0V, IC = 1mA (25°C-175°C)  
IC = 48A, VGE = 15V, TJ = 25°C  
1.90  
—
VCE(on)  
VGE(th)  
Collector-to-Emitter Saturation Voltage  
V
IC = 48A, VGE = 15V, TJ = 150°C  
IC = 48A, VGE = 15V, TJ = 175°C  
VCE = VGE, IC = 1.4mA  
—
Gate Threshold Voltage  
6.5  
—
V
VGE (t h)/ T J  
Threshold Voltage temp. coefficient  
Forward Transconductance  
-21  
32  
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)  
VCE = 50V, IC = 48A, PW = 80μs  
gfe  
—
S
ICES  
Collector-to-Emitter Leakage Current  
1.0  
150  
1000  
2.91  
—
μA VGE = 0V, VCE = 600V  
450  
1.95  
1.45  
—
VGE = 0V, VCE = 600V, TJ = 175°C  
VFM  
Diode Forward Voltage Drop  
V
IF = 48A  
IF = 48A, TJ = 175°C  
IGES  
Gate-to-Emitter Leakage Current  
±100  
nA VGE = ±20V  
Switching Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Total Gate Charge (turn-on)  
Gate-to-Emitter Charge (turn-on)  
Gate-to-Collector Charge (turn-on)  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On delay time  
Rise time  
Min. Typ. Max. Units  
Conditions  
Qg  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
95  
28  
140  
42  
IC = 48A  
nC VGE = 15V  
VCC = 400V  
Qge  
Qgc  
Eon  
Eoff  
Etotal  
td(on)  
tr  
35  
53  
625  
1141  
IC = 48A, VCC = 400V, VGE = 15V  
1275 1481  
1900 2622  
μJ  
RG = 10 , L = 200μH, LS = 150nH, TJ = 25°C  
E nergy los s es include tail & diode revers e recovery  
60  
40  
78  
56  
176  
46  
—
—
—
—
—
—
—
—
—
—
IC = 48A, VCC = 400V, VGE = 15V  
ns  
RG = 10 , L = 200μH, LS = 150nH, TJ = 25°C  
td(off)  
tf  
Turn-Off delay time  
Fall time  
145  
35  
Eon  
Eoff  
Etotal  
td(on)  
tr  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On delay time  
Rise time  
1625  
1585  
3210  
55  
IC = 48A, VCC = 400V, VGE=15V  
μJ  
RG=10 , L=200μH, LS=150nH, TJ = 175°C  
E nergy los s es include tail & diode revers e recovery  
IC = 48A, VCC = 400V, VGE = 15V  
45  
ns  
RG = 10 , L = 200μH, LS = 150nH  
td(off)  
tf  
Turn-Off delay time  
Fall time  
165  
45  
TJ = 175°C  
Cies  
Coes  
Cres  
Input Capacitance  
3025  
245  
90  
pF VGE = 0V  
VCC = 30V  
Output Capacitance  
Reverse Transfer Capacitance  
f = 1.0Mhz  
TJ = 175°C, IC = 192A  
VCC = 480V, Vp =600V  
RBSOA  
SCSOA  
Reverse Bias Safe Operating Area  
Short Circuit Safe Operating Area  
FULL SQUARE  
Rg = 10 , VGE = +15V to 0V  
5
—
—
μs  
VCC = 400V, Vp =600V  
Rg = 10 , VGE = +15V to 0V  
Erec  
trr  
Reverse Recovery Energy of the Diode  
Diode Reverse Recovery Time  
—
—
—
845  
115  
40  
—
—
—
μJ  
ns  
A
TJ = 175°C  
VCC = 400V, IF = 48A  
Irr  
Peak Reverse Recovery Current  
VGE = 15V, Rg = 10 , L =200μH, Ls = 150nH  
Notes:  
 VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10.  
‚ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  
ƒ Pulse width limited by max. junction temperature.  
„ R is measured at TJ of approximately 90°C.  
  
www.irf.com © 2012 International Rectifier  
January 8, 2013  
2
IRGP4660DPbF/IRGP4660D-EPbF  
100  
80  
60  
40  
20  
0
350  
300  
250  
200  
150  
100  
50  
0
25  
50  
75  
100  
(°C)  
125  
150  
175  
25  
50  
75  
100  
(°C)  
125  
150  
175  
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.  
Fig. 2 - Power Dissipation vs. Case  
Case Temperature  
Temperature  
1000  
1000  
10μsec  
100  
100  
10  
1
100μsec  
1msec  
10  
DC  
1
Tc = 25°C  
Tj = 175°C  
Single Pulse  
0.1  
1
10  
100  
1000  
10  
100  
(V)  
1000  
V
(V)  
V
CE  
CE  
Fig. 3 - Forward SOA  
TC = 25°C, TJ 175°C; VGE =15V  
Fig. 4 - Reverse Bias SOA  
TJ = 175°C; VGE =15V  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
V
= 18V  
GE  
V
= 18V  
GE  
VGE = 15V  
VGE = 12V  
VGE = 10V  
VGE = 8.0V  
VGE = 15V  
VGE = 12V  
VGE = 10V  
VGE = 8.0V  
60  
60  
40  
40  
20  
20  
0
0
0
2
4
6
8
10  
0
2
4
6
8
10  
V
(V)  
V
(V)  
CE  
CE  
Fig. 5 - Typ. IGBT Output Characteristics  
TJ = -40°C; tp = 80μs  
Fig. 6 - Typ. IGBT Output Characteristics  
TJ = 25°C; tp = 80μs  
3
www.irf.com © 2012 International Rectifier  
January 8, 2013  
IRGP4660DPbF/IRGP4660D-EPbF  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
V
= 18V  
GE  
VGE = 15V  
VGE = 12V  
VGE = 10V  
VGE = 8.0V  
140  
-40°c  
25°C  
175°C  
120  
100  
80  
60  
40  
20  
0
60  
40  
20  
0
0
2
4
6
8
10  
0.0  
1.0  
2.0  
(V)  
3.0  
4.0  
V
F
V
(V)  
CE  
Fig. 7 - Typ. IGBT Output Characteristics  
TJ = 175°C; tp = 80μs  
Fig. 8 - Typ. Diode Forward Characteristics  
tp = 80μs  
20  
18  
16  
14  
12  
20  
18  
16  
14  
12  
I
I
I
= 24A  
= 48A  
= 96A  
I
I
I
= 24A  
= 48A  
= 96A  
CE  
CE  
CE  
CE  
CE  
CE  
10  
8
10  
8
6
6
4
4
2
2
0
0
5
10  
15  
20  
5
10  
15  
20  
V
(V)  
V
(V)  
GE  
GE  
Fig. 10 - Typical VCE vs. VGE  
Fig. 9 - Typical VCE vs. VGE  
TJ = 25°C  
TJ = -40°C  
20  
18  
16  
14  
12  
10  
8
200  
180  
160  
140  
120  
100  
80  
T = 25°C  
J
T
= 175°C  
J
I
I
I
= 24A  
CE  
CE  
CE  
= 48A  
= 96A  
6
60  
4
40  
2
20  
0
0
5
10  
15  
20  
0
5
10  
15  
V
(V)  
V
(V)  
GE  
GE  
Fig. 11 - Typical VCE vs. VGE  
Fig. 12 - Typ. Transfer Characteristics  
CE = 50V; tp = 10μs  
TJ = 175°C  
V
www.irf.com © 2012 International Rectifier  
January 8, 2013  
4
IRGP4660DPbF/IRGP4660D-EPbF  
6000  
5000  
4000  
3000  
2000  
1000  
0
1000  
E
OFF  
td  
OFF  
E
100  
ON  
td  
ON  
t
F
t
R
10  
0
50  
100  
150  
0
20  
40  
60  
80  
100  
I
(A)  
C
I
(A)  
C
Fig. 13 - Typ. Energy Loss vs. IC  
Fig. 14 - Typ. Switching Time vs. IC  
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V  
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V  
5000  
1000  
4500  
td  
OFF  
E
OFF  
4000  
E
t
ON  
R
3500  
3000  
2500  
2000  
1500  
1000  
td  
ON  
100  
t
F
10  
0
25  
50  
75  
100  
125  
0
25  
50  
75  
()  
100  
125  
R
G
Rg ()  
Fig. 16 - Typ. Switching Time vs. RG  
Fig. 15 - Typ. Energy Loss vs. RG  
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V  
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V  
45  
45  
40  
40  
35  
30  
25  
20  
15  
10  
R
10  
G =  
R
35  
30  
25  
20  
15  
10  
5
22  
G =  
47  
R
G =  
100  
R
G =  
0
0
20  
40  
60  
80  
100  
0
25  
50  
75  
  
100  
125  
I
(A)  
R
(
F
G
Fig. 17 - Typ. Diode IRR vs. IF  
Fig. 18 - Typ. Diode IRR vs. RG  
TJ = 175°C  
TJ = 175°C  
5
www.irf.com © 2012 International Rectifier  
January 8, 2013  
IRGP4660DPbF/IRGP4660D-EPbF  
45  
40  
35  
30  
25  
20  
15  
10  
4000  
3500  
96A  
3000  
10  
48A  
2500  
2000  
1500  
1000  
100  
22  
47  
24A  
0
500  
1000  
1500  
0
200  
400  
600  
800  
1000  
di /dt (A/μs)  
di /dt (A/μs)  
F
F
Fig. 20 - Typ. Diode QRR vs. diF/dt  
CC = 400V; VGE = 15V; TJ = 175°C  
Fig. 19 - Typ. Diode IRR vs. diF/dt  
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C  
V
400  
350  
300  
250  
200  
150  
100  
50  
900  
800  
18  
16  
14  
12  
10  
8
R
R
= 10  
= 22  
G
700  
600  
500  
400  
300  
200  
100  
0
G
R
G
= 47  
G
R
= 100  
6
4
0
20  
40  
60  
80  
100  
8
10  
12  
14  
(V)  
16  
18  
I
(A)  
V
F
GE  
Fig. 22 - VGE vs. Short Circuit Time  
Fig. 21 - Typ. Diode ERR vs. IF  
VCC = 400V; TC = 25°C  
TJ = 175°C  
10000  
1000  
100  
16  
14  
12  
10  
8
V
V
= 300V  
= 400V  
Cies  
CES  
CES  
Coes  
Cres  
6
4
2
10  
0
0
20  
40  
60  
(V)  
80  
100  
0
25  
50  
75  
100  
V
Q
, Total Gate Charge (nC)  
CE  
G
Fig. 24 - Typical Gate Charge vs. VGE  
ICE = 48A; L = 600μH  
Fig. 23 - Typ. Capacitance vs. VCE  
VGE= 0V; f = 1MHz  
www.irf.com © 2012 International Rectifier  
January 8, 2013  
6
IRGP4660DPbF/IRGP4660D-EPbF  
1
0.1  
D = 0.50  
0.20  
0.10  
0.05  
R1  
R1  
R2  
R2  
R3  
R3  
Ri (°C/W) i (sec)  
0.0872 0.000114  
0.1599 0.001520  
0.02  
0.01  
0.01  
J J  
C  
11  
2 2  
33  
0.2020 0.020330  
SINGLE PULSE  
( THERMAL RESPONSE )  
Ci= iRi  
0.001  
0.0001  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
1
t
, Rectangular Pulse Duration (sec)  
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
0.1  
R1  
R1  
R2  
R2  
R3  
R3  
Ri (°C/W) i (sec)  
0.2774 0.000908  
0.02  
0.01  
J J  
C  
0.01  
0.001  
0.0001  
11  
2 2  
33  
0.3896 0.003869  
0.2540 0.030195  
Ci= iRi  
SINGLE PULSE  
( THERMAL RESPONSE )  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
1
t
, Rectangular Pulse Duration (sec)  
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)  
7
www.irf.com © 2012 International Rectifier  
January 8, 2013  
IRGP4660DPbF/IRGP4660D-EPbF  
L
L
80 V  
+
-
DUT  
VCC  
0
DUT  
VCC  
1K  
Rg  
Fig.C.T.1 - Gate Charge Circuit (turn-off)  
Fig.C.T.2 - RBSOA Circuit  
diode clamp /  
DUT  
L
4X  
-5V  
Rg  
DC  
DUT  
VCC  
DUT /  
DRIVER  
VCC  
RSH  
Fig.C.T.3 - S.C. SOA Circuit  
Fig.C.T.4 - Switching Loss Circuit  
C force  
R = VCC  
ICM  
100K  
D1 22K  
C sense  
VCC  
DUT  
DUT  
G force  
Rg  
0.0075μF  
E sense  
E force  
Fig.C.T.6 - BVCES Filter Circuit  
Fig.C.T.5 - Resistive Load Circuit  
www.irf.com © 2012 International Rectifier  
January 8, 2013  
8
IRGP4660DPbF/IRGP4660D-EPbF  
700  
600  
500  
400  
300  
200  
100  
0
140  
120  
100  
80  
700  
600  
500  
400  
300  
200  
100  
0
140  
120  
100  
80  
tr  
TEST  
CURRENT  
tf  
60  
60  
90% test  
90% ICE  
40  
40  
5% VCE  
10% test  
current  
5% VCE  
20  
20  
5% ICE  
0
0
EOFF Loss  
0.60  
EON  
-100  
-20  
-100  
-20  
-0.40  
0.10  
1.10  
6.20  
6.40  
6.60  
6.80  
7.00  
Time(µs)  
Time (µs)  
Fig. WF1 - Typ. Turn-off Loss Waveform  
Fig. WF2 - Typ. Turn-on Loss Waveform  
@ TJ = 175°C using Fig. CT.4  
@ TJ = 175°C using Fig. CT.4  
600  
500  
400  
300  
200  
100  
0
600  
60  
50  
40  
500  
400  
300  
200  
100  
0
ICE  
VCE  
QRR  
30  
20  
10  
tRR  
0
-10  
-20  
-30  
-40  
10%  
Peak  
IRR  
Peak  
IRR  
-100  
-100  
-0.15 -0.05 0.05  
0.15  
0.25  
-5.00  
0.00  
5.00  
10.00  
time (µS)  
time (µS)  
Fig. WF3 - Typ. Diode Recovery Waveform  
Fig. WF4 - Typ. S.C. Waveform  
@ TJ = 25°C using Fig. CT.3  
@ TJ = 175°C using Fig. CT.4  
9
www.irf.com © 2012 International Rectifier  
January 8, 2013  
IRGP4660DPbF/IRGP4660D-EPbF  
TO-247AC Package Outline  
Dimensions are shown in millimeters (inches)  
TO-247AC Part Marking Information  
TO-247AC package is not recommended for Surface Mount Application.  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
www.irf.com © 2012 International Rectifier  
January 8, 2013  
10  
IRGP4660DPbF/IRGP4660D-EPbF  
TO-247AD Package Outline  
Dimensions are shown in millimeters (inches)  
TO-247AD Part Marking Information  
TO-247AD package is not recommended for Surface Mount Application.  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
11  
www.irf.com © 2012 International Rectifier  
January 8, 2013  
IRGP4660DPbF/IRGP4660D-EPbF  
Qualification Information†  
Qualification Level  
Industrial  
(per International Rectifier’s internal guidelines)  
Moisture Sensitivity Level  
TO-247AC  
TO-247AD  
N/A  
N/A  
Class 2 (+/- 4000V )††  
Human Body Model  
(per JEDEC JESD22-A114)  
ESD  
Class IV (+/- 1125V )††  
Charged Device Model  
(per JEDEC JESD22-C101)  
RoHS Compliant  
Yes  
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability  
†† Highest passing voltage.  
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA  
To contact International Rectifier, please visit http://www.irf.com/whoto-call/  
www.irf.com © 2012 International Rectifier  
January 8, 2013  
12  

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