UC1610QTR [ETC]
BRIDGE/RING DIODE ARRAY|LDCC ; BRIDGE / RING二极管阵列| LDCC\n
| 型号： | UC1610QTR |
| 厂家： | 
ETC |
| 描述： | BRIDGE/RING DIODE ARRAY|LDCC
|
| 文件： | 总3页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UC1610
UC2610
UC3610
Dual Schottky Diode Bridge
FEATURES
DESCRIPTION
•
•
•
•
•
•
Monolithic Eight-Diode Array
This eight-diode array is designed for high-current, low duty-cycle applications
typical of flyback voltage clamping for inductive loads. The dual bridge connection
makes this device particularly applicable to bipolar driven stepper motors.
Exceptional Efficiency
Low Forward Voltage
Fast Recovery Time
High Peak Current
Small Size
The use of Schottky diode technology features high efficiency through lowered for-
ward voltage drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both hermetic CERDIP and copper-
leaded plastic packages. The UC1610 in ceramic is designed for -55°C to +125°C
environments but with reduced peak current capability. The UC2610 in plastic and
ceramic is designed for -25°C to +125°C environments also with reduced peak
current capability; while the UC3610 in plastic has higher current rating over a 0°C
to +70°C temperature range.
ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Peak Forward Current
UC1610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
UC2610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
UC3610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation at TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Lead Temperature (Soldering, 10 Seconds). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Note: Consult Packaging Section of Databook for thermal limitations and considerations of
package.
CONNECTION DIAGRAMS
SOIC-16 (TOP VIEW)
DW Package
DIL-8 (TOP VIEW)
N or J Package
PLCC-20 (TOP VIEW)
Q Package
3/95
Powered by ICminer.com Electronic-Library Service CopyRight 2003
UC1610
UC2610
UC3610
ELECTRICAL CHARACTERISTICS:
All specifications apply to each individual diode. TJ = 25°C except as noted. TA = TJ.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNITS
Forward Voltage Drop
IF = 100mA
IF = 1A
VR = 40V
VR = 40V, TJ = +100°C
0.5A Forward to 0.5A Reverse
1A Forward to 1.1V Recovery
VR = 5V
0.35
0.8
0.5
1.0
.01
0.1
15
0.7
1.3
0.1
1.0
V
V
Leakage Current
mA
mA
ns
ns
pF
Reverse Recovery
Forward Recovery
Junction Capacitance
30
70
Note: At forward currents of greater than 1.0A a parasitic current of approximately 10mA may be collected by adjacent diodes.
Reverse Current vs Voltage
Forward Current vs Voltage
Reverse Recovery Characteristics
Forward Recovery Characteristics
UNITRODE INTEGRATED CIRCUITS
7 CONTINENTAL BLVD. • MERRIMACK, NH 03054
TEL. (603) 424-2410 • FAX (603) 424-3460
Powered by ICminer.com Electronic-Library Service CopyRight 2003
2
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相关型号：
©2020 ICPDF网 联系我们和版权申明