FDMA1027P_08 [FAIRCHILD]
Dual P-Channel PowerTrench㈢ MOSFET; 双P通道MOSFET的PowerTrench㈢
| 型号： | FDMA1027P_08 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Dual P-Channel PowerTrench㈢ MOSFET |
| 文件： | 总7页 (文件大小：680K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2008
FDMA1027P
Dual P-Channel PowerTrench MOSFET
®
General Description
Features
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
-3.0 A, -20V. RDS(ON) = 120 mΩ @ VGS = -4.5 V
RDS(ON) = 160 mΩ @ VGS = -2.5 V
resistance for minimum conduction losses.
connected in the typical common source configuration,
bi-directional current flow is possible.
When
RDS(ON) = 240 mΩ @ VGS = -1.8 V
Low Profile - 0.8 mm maximun - in the new package
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
MicroFET 2x2 mm
RoHS Compliant
PIN1
S1
G1 D2
1
2
3
6
5
4
D1
G2
S2
S1
G1
D2
D1
D2
MicroFET 2X2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
G2 S2
D1
Symbol
VDSS
VGSS
Parameter
MOSFET Drain-Source Voltage
Ratings
Units
-20
V
V
MOSFET Gate-Source Voltage
±8
-3.0
Drain Current -Continuous
-Pulsed
(Note 1a)
ID
A
-6
1.4
Power dissipation for Single Operation
Power dissipation for Single Operation
(Note 1a)
(Note 1b)
PD
W
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
oC
Thermal Characteristics
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86 (Single Operation)
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1b) 173 (Single Operation)
69 (Dual Operation)
oC/W
151 (Dual Operation)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
027
FDMA1027P
7"
8mm
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMA1027P Rev.D2 (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250µA
-20
-
-
-
-
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA,
Referenced to 25°C
-12
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Body Leakage,
VDS = -16V, VGS = 0V
-
-
-
-
-1
µA
VGS = ±8V, VDS = 0V
±100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250µA
-0.4
-
-0.7
2
-1.3
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = -250µA,
Referenced to 25°C
-
mV/°C
V
GS = -4.5V, ID = -3.0A
-
-
-
90
120
160
240
VGS = -2.5V, ID = -2.5A
VGS = -1.8V, ID = -1.0A
120
172
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS = -4.5V, ID = -3.0A
TJ = 125°C
-
118
160
ID(on)
gFS
On-State Drain Current
VGS = -4.5V, VDS = -5V
VDS = -5V, ID = -3.0A
-20
-
-
-
-
A
S
Forward Transconductance
7
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
-
-
-
435
80
-
-
-
pF
pF
pF
V
DS = -10V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
45
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
-
-
9
11
15
6
18
19
27
12
6
ns
ns
VDD = -10V, ID = -1A
VGS = -4.5V, RGEN = 6Ω
ns
ns
Qg
4
nC
nC
nC
VDS = -10V, ID = -3.0A,
VGS = -4.5V
Qgs
Qgd
0.8
0.9
-
-
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-
-
-
-
-
-0.8
17
6
-1.1
A
V
VSD
trr
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
VGS = 0V, IS = -1.1 A (Note 2)
-1.2
-
-
ns
nC
IF= -3.0A, dIF/dt=100A/µs
Qrr
Diode Reverse Recovery Charge
2
FDMA1027P Rev.D2 (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
2
1. R
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by
θJA
θJC
design while R
is determined by the user's board design.
2
θJA
(a) R
(b) R
= 86°C/W when mounted on a 1in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
= 173°C/W when mounted on a minimum pad of 2 oz copper
θJA
θJA
o
o
a) 86 C/W when
b) 173 C/W when
mounted on a
minimum pad of
2 oz copper
mounted on a
2
1in pad of
2 oz copper
Scale 1: 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3
FDMA1027P Rev.D2 (W)
Typical Characteristics
3
2.6
2.2
1.8
1.4
1
6
VGS = -4.5V
-3.5V
-2.5V
VGS = -1.5V
-2.0V
5
4
3
2
1
0
-3.0V
-1.8V
-1.8V
-2.0V
-2.5V
-3.0V
-1.5V
-3.5V
-4.5V
0.6
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.28
1.4
1.3
1.2
1.1
1
ID = -3.0A
VGS = -4.5V
ID = -1.5A
0.22
0.16
0.1
TA = 125oC
TA = 25oC
0.9
0.8
0.04
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
10
6
5
4
3
2
1
0
VDS = -5V
VGS = 0V
1
0.1
TA = 125oC
0.01
TA = 125oC
25oC
-55oC
-55oC
0.001
25oC
0.0001
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
4
FDMA1027P Rev. D2 (W)
Typical Characteristics
700
600
500
400
300
200
100
0
5
f = 1MHz
VGS = 0 V
ID = -3.0A
4
VDS = -5V
-15V
3
2
1
0
C
iss
-10V
Coss
Crss
0
1
2
3
4
5
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
100us
RDS(ON) LIMIT
1ms
10ms
100ms
1s
1
10s
DC
VGS = -4.5V
0.1
SINGLE PULSE
RθJA = 173oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operation Area
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
5
FDMA1027P Rev. D2 (W)
Dimensional Outline and Pad Layout
6
FDMA1027P Rev. D2 (W)
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Datasheet contains the design specifications for product development. Specifications may
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Not In Production
Rev. I36
FDMA1027P Rev. D2 (W)
7
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