FDMA1028NZ_08 [FAIRCHILD]
Dual N-Channel PowerTrench㈢ MOSFET; 双N沟道MOSFET PowerTrench㈢
| 型号： | FDMA1028NZ_08 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Dual N-Channel PowerTrench㈢ MOSFET |
| 文件： | 总7页 (文件大小：830K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
t
March 2008
tm
FDMA1028NZ
Dual N-Channel PowerTrench® MOSFET
General Description
Features
• 3.7 A, 20V.
RDS(ON) = 68 mΩ @ VGS = 4.5V
RDS(ON) = 86 mΩ @ VGS = 2.5V
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• HBM ESD protection level > 2kV (Note 3)
• RoHS Compliant
PIN 1
S1 G1 D2
D1
D2
D1
S1
G1
D2
1
2
3
6
5
4
G2
S2
D1 G2 S2
MicroFET 2x2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
Ratings
Units
V
20
VGS
Gate-Source Voltage
V
A
±12
Drain Current – Continuous
– Pulsed
(Note 1a)
3.7
ID
6
1.4
PD
W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
028
FDMA1028NZ
7’’
8mm
3000 units
FDMA1028NZ Rev B2 (W)
©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
20
V
VGS = 0 V,
ID = 250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
mV/°C
15
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = 16 V,
VGS = 0 V
1
µA
µA
IGSS
VGS = ± 12 V, VDS = 0 V
±10
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
0.6
1.0
–4
1.5
V
VDS = VGS
,
ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
GS = 2.5 V,
VGS= 4.5 V, ID = 3.7 A, TJ=125°C
ID = 3.7 A
ID = 3.3 A
37
50
53
68
86
90
mΩ
V
gFS
Forward Transconductance
VDS = 10 V,
ID = 3.7 A
16
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
340
80
pF
pF
pF
V
DS = 10 V,
V GS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
60
Switching Characteristics (Note 2)
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
8
16
16
26
6
ns
ns
14
3
ns
ns
VDS = 10 V,
ID = 3.7 A,
Qg
Qgs
Qgd
4
6
nC
nC
nC
V
GS = 4.5 V
0.7
1.1
FDMA1028NZ Rev B2 (W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.1
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
V
GS = 0 V, IS = 1.1 A (Note 2)
0.7
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 3.7 A,
dIF/dt = 100 A/µs
11
2
ns
Qrr
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is
determined by the user's board design.
(a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper
(c) RθJA = 69°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d) RθJA = 151°C/W when mounted on a minimum pad of 2 oz copper
a) 86oC/W when
mounted on a
1in2 pad of
b) 173oC/W when
mounted on a
minimum pad of
2 oz copper
2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
FDMA1028NZ Rev B2 (W)
Typical Characteristics
6
2
1.8
1.6
1.4
1.2
1
2.5V
VGS = 4.5V
3.5V
2.0V
VGS = 2.0V
5
4
3
2
1
0
3.0V
2.5V
3.0V
3.5V
4.0V
4.5V
1.5V
0.8
0
0.2
0.4
0.6
0.8
1
1.2
150
2.5
0
1
2
3
4
5
6
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.13
1.6
1.5
1.4
1.3
1.2
1.1
1
ID = 3.7A
GS = 4.5V
ID = 1.85A
V
0.11
0.09
0.07
0.05
0.03
TA = 125oC
0.9
0.8
0.7
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
0
2
V
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
6
VGS = 0V
VDS = 5V
10
1
5
4
3
2
1
0
0.1
TA = 125oC
0.01
0.001
0.0001
25oC
TA = 125oC
-55oC
-55oC
25oC
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
V
GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA1028NZ Rev B2 (W)
Typical Characteristics
10
500
400
300
200
100
0
f = 1MHz
GS = 0 V
VDS = 5V
ID = 3.7A
15V
V
8
6
4
2
0
10V
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
RθJA = 173°C/W
T
A = 25°C
RDS(ON) LIMIT
10
100us
1ms
10ms
100ms
1s
1
10s
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 173°C/W
TA = 25°C
0.1
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =173 °C/W
0.2
0.1
P(pk)
0.1
0.05
t1
0.02
0.01
t2
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
T
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA1028NZ Rev B2 (W)
Dimensional Outline and Pad Layout
rev3
FDMA1028NZ Rev B2 (W)
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
The Power Franchise®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
F-PFS™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ *
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
TinyWire™
µSerDes™
™
®
MicroPak™
Fairchild®
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
UHC®
Ultra FRFET™
UniFET™
VCX™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
OPTOPLANAR®
VisualMax™
®
FastvCore™
tm
FlashWriter®
*
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
FDMA1028NZ Rev B2 (W)
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