FDMA1028NZ [ONSEMI]
双 N 沟道 PowerTrench® MOSFET 20V，3.7A，68mΩ;
| 型号： | FDMA1028NZ |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道 PowerTrench® MOSFET 20V，3.7A，68mΩ 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual, N-Channel,
POWERTRENCH)
V
MAX
R
MAX
I MAX
D
DS
DS(on)
20 V
68 mꢀ @ 4.5 V
86 mꢀ @ 2.5 V
3.7 A
20 V, 3.7 A, 68 mW
Pin 1
S1
FDMA1028NZ
G1
D2
D1
D2
General Description
D1
G2
This device is designed specifically as a single package solution
for dual switching requirements in cellular handset and other
ultra−portable applications. It features two independent N−Channel
MOSFETs with low on−state resistance for minimum conduction
losses. The MicroFETt 2x2 offers exceptional thermal performance
for its physical size and is well suited to linear mode applications.
S2
WDFN6 2x2, 0.65P
(MicroFET 2x2)
CASE 511DA
MARKING DIAGRAM
Features
• 3.7 A, 20 V
R
R
= 68 mꢀ at V = 4.5 V
GS
DS(on)
&Z&2&K
028
= 86 mꢀ at V = 2.5 V
DS(on)
GS
• Low Profile − 0.8 mm Maximum − In the New Package MicroFET
2x2 mm
• HBM ESD Protection Level > 2 kV (Note 3)
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free and is RoHS Compliant
&Z = Assembly Plant Code
&2 = 2−Digit Date Code
&K = 2−Digits Lot Run Traceability Code
028 = Device Code
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
PIN CONNECTIONS
Symbol
Parameter
Drain−Source Voltage
Ratings
20
Unit
V
V
DS
GS
D1
V
Gate−Source Voltage
12
V
1
2
3
S1
6
5
4
I
D
Drain Current
−Continuous (Note 1a)
−Pulsed
A
3.7
6
G1
D2
G2
S2
P
D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
W
1.4
0.7
T , T
Operating and Storage Junction
Temperature Range
–55 to
+150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Shipping
Device
Package
THERMAL CHARACTERISTICS
FDMA1028NZ
WDFN6
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
Symbol
Parameter
Ratings
Unit
Thermal Resistance,
86 (Single Operation)
°C/W
R
ꢁ
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Junction to Ambient (Note 1a)
R
Thermal Resistance,
Junction to Ambient (Note 1b)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
ꢁ
JA
R
Thermal Resistance,
Junction to Ambient (Note 1c)
ꢁ
JA
R
Thermal Resistance,
Junction to Ambient (Note 1d)
ꢁ
JA
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
April, 2023 − Rev. 3
FDMA1028NZ/D
FDMA1028NZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
I
I
= 250 ꢂ A, V = 0 V
20
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 ꢂ A, referenced to 25°C
−
15
mV/°C
ꢃ BVDSS
ꢃ TJ
D
I
Zero Gate Voltage Drain Current
V
V
= 16 V, V = 0 V
−
−
−
−
1
ꢂ A
ꢂ A
DSS
GSS
DS
GS
I
Gate−Body Leakage
=
12 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
I
I
= 250 ꢂ A, V = V
GS
0.6
1.0
1.5
V
GS(th)
D
DS
Gate Threshold Voltage
Temperature Coefficient
= 250 ꢂ A, referenced to 25°C
−
−4
−
mV/°C
ꢃ VGS(th)
ꢃ TJ
D
R
Static Drain−Source
On−Resistance
V
V
V
= 4.5 V, I = 3.7 A
−
−
−
−
37
50
53
16
68
86
90
−
mꢀ
DS(on)
GS
GS
GS
D
= 2.5 V, I = 3.3 A
D
= 4.5 V, I = 3.7 A, T = 125°C
D
J
g
FS
Forward Transconductance
I
D
= 3.7 A, V = 10 V
S
DS
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 10 V, V = 0 V, f = 1.0 MHz
−
−
−
−
340
80
60
−
−
−
pF
pF
pF
ꢀ
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
Rg
25
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= 10 V, I = 1 A
−
−
−
−
−
−
−
8
8
16
16
26
6
ns
ns
d(on)
DD
GS
D
= 4.5 V, R
= 6 ꢀ
GEN
t
r
t
14
3
ns
d(off)
t
f
ns
Q
V
DS
V
GS
= 10 V, I = 3.7 A,
4
6
nC
nC
nC
g
D
= 4.5 V
Q
0.7
1.1
−
gs
gd
Q
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed by design
JC
ꢁ
ꢁ
JA
while R
is determined by the user’s board design.
ꢁ
JA
2
a. R
= 86°C/W when mounted on a 1 in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. For single operation.
ꢁ
JA
JA
JA
JA
b. R
c. R
d. R
= 173°C/W when mounted on a minimum pad of 2 oz copper. For single operation.
ꢁ
ꢁ
ꢁ
2
= 69°C/W when mounted on a 1 in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. For dual operation.
= 151°C/W when mounted on a minimum pad of 2 oz copper. For dual operation.
a. 86°C/W when mounted on
b. 173°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
c. 69°C/W when mounted on
d. 151°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ꢂ s, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
2
FDMA1028NZ
TYPICAL CHARACTERISTICS
2
6
5
V
3.5 V
= 4.5 V
GS
2.0 V
V
GS
= 2.0 V
2.5 V
1
1.8
1.6
1.4
1.2
1
3.0 V
2.5 V
4
3
2
1
0
3.0 V
3.5 V
4.5 V
1.5 V
4.0 V
4
0.8
0
0
0.2
0.4
0.6
0.8
1
1.2
2
3
5
6
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 2. On−Resistance Variation with Drain
Figure 1. On−Region Characteristics
Current and Gate Voltage
0.13
1.6
1.5
I
V
= 3.7 A
I
D
= 1.85 A
D
= 4.5 V
GS
1.4
1.3
1.2
1.1
1
0.11
0.09
0.07
T = 125°C
A
0.9
0.8
0.7
0.6
0.05
0.03
T = 25°C
A
0
10
−50 −25
0
25
50
75
100 125 150
2
4
6
8
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (5C)
J
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
100
10
6
V
DS
= 5 V
V
GS
= 0 V
5
1
4
3
25°C
0.1
T = 125°C
A
0.01
0.001
0.0001
2
1
0
25°C
−55°C
T = 125°C
A
−55°C
1
0.5
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
FDMA1028NZ
TYPICAL CHARACTERISTICS (continued)
500
10
8
f = 1 MHz
= 0 V
I
D
= 3.7 A
V
V
DS
= 5 V
GS
15 V
400
300
200
100
0
10 V
6
4
2
0
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
10
15
20
5
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
50
40
30
20
10
0
100
10
SINGLE PULSE
R
= 173°C/W
ꢁ
JA
T = 25°C
A
R
DS(ON) LIMIT
100 ꢂ s
1 ms
1
10 ms
100 ms
V
= 4.5 V
GS
0.1
1 s
10 s
DC
SINGLE PULSE
= 173°C/W
R
ꢁ
JA
T = 25°C
A
0.01
1
0.1
1
10
100
0.0001 0.001 0.01
0.1
1
10
100 1000
V
DS
, Drain−Source Voltage (V)
t , Time (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
D = 0.5
0.2
R
R
(t) = r(t) × R
= 173°C/W
ꢁ
ꢁ
ꢁ
JA
JA
JA
0.1
0.1
P(pk)
0.05
0.02
0.01
t
1
t
2
T − T = P × R (t)
ꢁ
JA
J
A
SINGLE PULSE
Duty Cycle, D = t / t
1
2
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Time (s)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
MicroFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511DA
ISSUE O
DATE 31 JUL 2016
0.05
C
2.0
A
2X
B
1.80
1.72
2.0
0.80(2X)
1.00(2X)
0.21
1.41
0.05
C
2.25
TOP VIEW
2X
0.42(6X)
PIN#1 IDENT
0.42(6X)
(0.10)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN
0.10
C
0.20 0.05
C
0.08
C
0.025 0.025
SEATING
PLANE
SIDE VIEW
NOTES:
A. CONFORM TO JADEC REGISTRATIONS MO−229,
VARIATION VCCC, EXCEPT WHERE NOTED.
2.00 0.05
1.64 0.05
B. DIMENSIONS ARE IN MILLIMETERS.
0.645 0.05
0.350
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
PIN#1 IDENT
(0.185)4X
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
3
0.275 0.05
(6X)
F. NON−JEDEC DUAL DAP
0.86 0.05
2.00 0.05
(0.57)
F
6
4
0.33 0.05
(6X)
0.65
0.10
0.05
C A B
1.30
C
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13615G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
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