FDP33N25 [FAIRCHILD]
250V N-Channel MOSFET; 250V N沟道MOSFET
| 型号： | FDP33N25 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 250V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：884K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2006
TM
UniFET
FDP33N25
250V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
Low gate charge ( typical 36.8 nC)
Low Crss ( typical 39 pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Fast switching
100% avalanche tested
Improved dv/dt capability
D
G
TO-220
FDP Series
G
D S
S
Absolute Maximum Ratings
Symbol
Parameter
FDP33N25
Unit
VDSS
Drain-Source Voltage
Drain Current
250
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
33
20.4
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
132
±30
918
33
A
V
VGSS
EAS
IAR
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
23.5
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
235
W
- Derate above 25°C
1.89
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
0.53
--
Unit
°C/W
°C/W
°C/W
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
--
0.5
--
Thermal Resistance, Junction-to-Ambient
62.5
©2006 Fairchild Semiconductor Corporation
FDP33N25 Rev A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP33N25
FDP33N25
TO-220
-
-
50
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
250
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
0.25
V/°C
/
ΔTJ
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 16.5A
VDS = 40V, ID =16.5A
3.0
--
--
5.0
0.094
--
V
Ω
S
Static Drain-Source
On-Resistance
0.077
26.6
(Note 4)
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
1640
330
39
2135
430
59
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 125V, ID = 33A
RG = 25Ω
--
--
--
--
--
--
--
35
230
75
80
470
160
250
48
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
120
36.8
10
ns
Qg
VDS = 200V, ID = 33A
VGS = 10V
nC
nC
nC
Qgs
Qgd
--
17
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
33
132
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 33A
--
V
VGS = 0V, IS = 33A
220
1.71
ns
μC
dIF/dt =100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, I = 33A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 33A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
www.fairchildsemi.com
FDP33N25 Rev A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
101
100
102
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
150oC
25oC
-55oC
* Notes :
1. VDS = 40V
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
100
2. 250μs Pulse Test
10-1
100
101
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.25
0.20
102
101
100
VGS = 10V
0.15
150oC
25oC
0.10
VGS = 20V
0.05
* Notes :
1. VGS = 0V
* Note : TJ = 25oC
2. 250μs Pulse Test
0.00
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
4000
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 50V
VDS = 125V
VDS = 200V
C
3000
2000
1000
0
Coss
C
iss
6
4
* Note ;
1. VGS = 0 V
C
rss
2. f = 1 MHz
2
* Note : ID = 33A
0
10-1
100
101
0
10
20
30
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDP33N25 Rev A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.2
1.1
1.0
1.0
* Notes :
0.9
1. VGS = 0 V
* Notes :
1. VGS = 10 V
2. ID = 250 μA
0.5
2. ID = 16.5 A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
40
30
20
10
0
10 μs
102
100 μs
1 ms
10 ms
100 ms
101
DC
Operation in This Area
is Limited by R DS(on)
100
* Notes :
1. TC = 25 o
2. TJ = 150 o
C
C
3. Single Pulse
-1
10
100
101
102
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
100
10-1
10-2
D=0.5
0.2
PDM
0.1
0.05
t1
t2
0.02
* Notes :
1. ZθJC(t) = 0.53 oC/W Max.
0.01
single pulse
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
4
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FDP33N25 Rev A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
www.fairchildsemi.com
FDP33N25 Rev A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
www.fairchildsemi.com
FDP33N25 Rev A
Mechanical Dimensions
TO-220
Dimensions in Millimeters
7
www.fairchildsemi.com
FDP33N25 Rev A
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accordance with instructions for use provided in the labeling, can be
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safety or effectiveness.
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Advance Information
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Definition
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This datasheet contains the design specifications for
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Preliminary
First Production
This datasheet contains preliminary data, and
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changes at any time without notice to improve
design.
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Rev. I20
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