FDW256P_08 [FAIRCHILD]
30V P-Channel PowerTrench MOSFET; 30V P沟道PowerTrench MOSFET
| 型号： | FDW256P_08 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V P-Channel PowerTrench MOSFET |
| 文件： | 总5页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2008
FDW256P
30V P-Channel PowerTrenchÒ MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
· –8 A, –30 V RDS(ON) = 13.5 mW @ VGS = –10 V
RDS(ON) = 20 mW @ VGS = –4.5 V
· Extended VGSS range (±25V) for battery applications
· High performance trench technology for extremely
Applications
low RDS(ON)
· Battery protection
· DC/DC conversion
· Power management
· Load switch
· Low profile TSSOP-8 package
5
6
7
8
4
3
2
1
TSSOP-8
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
ID
Gate-Source Voltage
± 25
V
A
Drain Current – Continuous
(Note 1)
–8
– Pulsed
Power Dissipation
–50
1.3
PD
(Note 1a)
(Note 1b)
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
96
°C/W
208
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
256P
FDW256P
13’’
16mm
2500 units
Ó2008 Fairchild Semiconductor Corporation
FDW256P Rev C1(W)
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 mA
–30
V
Breakdown Voltage Temperature
Coefficient
DBVDSS
DTJ
ID = –250 mA, Referenced to 25°C
–23
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –24 V, VGS = 0 V
VGS = 25 V, VDS = 0 V
VGS = –25 V, VDS = 0 V
–1
mA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
VDS = VGS
,
ID = –250 mA
–1
–1.7
5
–3
V
DVGS(th)
DTJ
RDS(on)
ID = –250 mA, Referenced to 25°C
mV/°C
mW
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –8.0 A
VGS = –4.5 V, ID = –6.5 A
VGS=–10 V, ID =–8.0A, TJ=125°C
11
16
15
13.5
20
19
ID(on)
gFS
On–State Drain Current
VGS = –10 V, VDS = –5 V
–50
A
S
Forward Transconductance
VDS = –5 V,
ID = –8.0 A
30
Dynamic Characteristics
C
Input Capacitance
2267
599
pF
pF
pF
iss
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
315
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 W
15
11
78
45
28
7
27
35
ns
ns
125
72
ns
ns
Qg
VDS = –15 V, ID = –8.0 A,
VGS = –5.0V
38
nC
nC
nC
Qgs
Qgd
12
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.2
–1.2
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V, IS = –1.2 A (Note 2)
–0.7
Voltage
Notes:
1. RqJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJCis guaranteed by design while RqCAis determined by the user's board design.
a) RqJAis 96 °C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RqJAis 208 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDW256P Rev C1(W)
Typical Characteristics
50
VGS = -10V
-4.5V
2.2
2
-6.0V
-4.0V
-3.5V
VGS = -3.5V
40
1.8
1.6
1.4
1.2
1
30
20
10
0
-4.0V
-3.0V
-4.5V
-5.0V
-6.0V
-10V
0.8
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
-VDS , DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.05
ID = -8A
VGS = -10V
ID = -4.0A
0.04
0.03
0.02
0.01
0
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
40
30
20
10
0
100
VGS = 0V
TA = -55oC
VDS = -5.0V
25oC
125oC
10
1
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0.0001
1
1.5
2
2.5
3
3.5
4
0
0.2
-VSD
0.4
0.6
0.8
1
1.2
1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
,
BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW256P Rev C1(W)
Typical Characteristics
4000
3200
2400
1600
800
10
VDS = -10V
f = 1 MHz
VGS = 0 V
ID = -8A
-15V
8
-20V
CISS
6
4
2
0
COSS
CRSS
0
0
10
20
30
40
50
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
1ms
SINGLE PULSE
Rq = 208°C/W
RDS(ON) LIMIT
10ms
JA
TA = 25°C
100ms
1s
10s
1
DC
VGS = -10V
SINGLE PULSE
RqJA = 208oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-V DS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) + RqJA
RqJA = 208oC/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
100 1000
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW256P Rev C1(W)
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®
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GTO™
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MegaBuck™
MICROCOUPLER™
MicroFET™
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Power-SPM™
PowerTrench
The Power Franchise
®
®
SM
Programmable Active Droop™
TinyBoost™
TinyBuck™
®
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Current Transfer Logic™
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Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
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®
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®
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EZSWITCH™ *
™
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®
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®
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
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Rev. I35
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