MCT5211SR2M [FAIRCHILD]
Transistor Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6;型号: | MCT5211SR2M |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Transistor Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6 输出元件 光电 |
文件: | 总13页 (文件大小:303K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
September 2009
MCT5201M, MCT5210M, MCT5211M
Low Input Current Phototransistor Optocouplers
Features
Description
■ High CTR
comparable to Darlingtons
The MCT52XXM series consists of a high-efficiency
AlGaAs, infrared emitting diode, coupled with an NPN
phototransistor in a six pin dual-in-line package.
CE(SAT)
■ CTR guaranteed 0°C to 70°C
■ High common mode transient rejection 5kV/µs
■ Data rates up to 150kbits/s (NRZ)
The MCT52XXM is well suited for CMOS to LSTT/TTL
interfaces, offering 250% CTR
with 1mA of LED
■ Underwriters Laboratory (UL) recognized,
CE(SAT)
input current. When an LED input current of 1.6mA is
supplied data rates to 20K bits/s are possible.
file #E90700, volume 2
■ IEC60747-5-2 approved (ordering option V)
The MCT52XXM can easily interface LSTTL to LSTTL/
TTL, and with use of an external base to emitter resistor
data rates of 100K bits/s can be achieved.
Applications
■ CMOS to CMOS/LSTTL logic isolation
■ LSTTL to CMOS/LSTTL logic isolation
■ RS-232 line receiver
■ Telephone ring detector
■ AC line voltage sensing
■ Switching power supply
Schematic
Package Outlines
1
2
6
BASE
ANODE
CATHODE
5 COL
3
4 EMITTER
©1983 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Lead Solder Temperature
-55 to +150
-40 to +100
260 for 10 sec
260
°C
°C
STG
T
OPR
T
°C
SOL
P
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
mW
mW/°C
D
3.5
EMITTER
I
Continuous Forward Current
Reverse Input Voltage
50
6
mA
V
F
V
R
I (pk)
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation
3.0
75
1.0
A
F
P
mW
mW/°C
D
Derate Linearly From 25°C
DETECTOR
I
Continuous Collector Current
Detector Power Dissipation
Derate Linearly from 25°C
150
150
2.0
mA
mW
C
P
D
mW/°C
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Individual Component Characteristics
Symbol
EMITTER
Parameters
Test Conditions
Device Min. Typ.* Max. Units
V
Input Forward Voltage
I = 5mA
All
All
1.25
1.5
V
F
F
∆V
Forward Voltage Temp. Coefficient
I = 2mA
-1.75
mV/°C
F
F
∆T
A
V
Reverse Voltage
I = 10µA
All
All
6
V
R
R
C
Junction Capacitance
V = 0V, f = 1.0MHz
18
pF
J
F
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage I = 1.0mA, I = 0
All
All
All
All
30
30
5
100
120
10
V
V
CEO
CBO
EBO
C
F
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Dark Current
I = 10µA, I = 0
C F
I = 10µA, I = 0
V
E
F
I
V
= 10V, I = 0,
1
100
nA
CER
CE
F
R
= 1MΩ
BE
CE
CB
EB
C
C
C
Capacitance, Collector to Emitter
Capacitance, Collector to Base
Capacitance, Emitter to Base
V
V
V
= 0, f = 1MHz
= 0, f = 1MHz
= 0, f = 1MHz
All
All
All
10
80
15
pF
pF
pF
CE
CB
EB
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Device
Min. Typ.* Max.
Units
V
Input-Output Isolation
Voltage
f = 60Hz, t = 1 sec.
All
7500
Vac(peak)
ISO
(10)
(10)
11
R
C
Isolation Resistance
Isolation Capacitance
V
V
V
= 500 VDC, T = 25°C
All
All
10
Ω
pF
ISO
ISO
I-O
I-O
CM
A
(9)
= 0, f = 1 MHz
0.4
0.6
CM
Common Mode Transient
Rejection – Output HIGH
Common Mode Transient
Rejection – Output LOW
= 50 V
, R = 750Ω, MCT5210M/11M
5000
V/µs
H
P-P1
L
I = 0
F
V
= 50 V , R = 1KΩ,
MCT5201M
CM
P-P
L
I = 0
F
CM
V
= 50 V
, R = 750Ω, MCT5210M/11M
5000
V/µs
L
CM
P-P1
P-P1
L
I =1.6mA
F
V
= 50 V
, R = 1KΩ,
MCT5201M
CM
L
I = 5mA
F
*All typical T = 25°C
A
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
3
Electrical Characteristics (Continued) (T = 25°C unless otherwise specified)
A
Transfer Characteristics
Symbol
Characteristics
Test Conditions
Device
Min. Typ.* Max. Units
DC CHARACTERISTICS
CTR
Saturated Current
Transfer Ratio
(Collector to Emitter)
I = 5mA, V = 0.4V
MCT5201M 120
MCT5210M 60
%
CE(SAT)
F
CE
(1)
I = 3.0mA, V = 0.4V
F
CE
I = 1.6mA, V = 0.4V
MCT5211M 100
75
F
CE
I = 1.0mA, V = 0.4V
F
CE
CTR
Current Transfer Ratio I = 3.0mA, V = 5.0V
MCT5210M
70
%
%
(CE)
(CB)
F
CE
(1)
(Collector to Emitter)
I = 1.6mA, V = 5.0V
MCT5211M 150
110
F
CE
I = 1.0mA, V = 5.0V
F
CE
CTR
Current Transfer Ratio I = 5mA, V = 4.3V
MCT5201M 0.28
F
CB
(2)
Collector to Base
I = 3.0mA, V = 4.3V
MCT5210M
MCT5211M
0.2
0.3
F
CE
I = 1.6mA, V = 4.3V
F
CE
I = 1.0mA, V = 4.3V
0.25
F
CE
V
Saturation Voltage
I = 5mA, I = 6mA
MCT5201M
MCT5210M
MCT5211M
0.4
0.4
0.4
V
CE(SAT)
F
CE
I = 3.0mA, I = 1.8mA
F
CE
I = 1.6mA, I = 1.6mA
F
CE
AC CHARACTERISTICS
T
Propagation Delay
HIGH-to-LOW
R = 330 Ω, R = ∞
I = 3.0mA, MCT5210M
10
7
µs
PHL
L
BE
F
(3)
V
= 5.0V
CC
R = 3.3 kΩ, R = 39kΩ
L
BE
R = 750 Ω, R = ∞
I = 1.6mA, MCT5211M
14
15
17
24
3
L
BE
F
V
= 5.0V
CC
R = 4.7 kΩ, R = 91kΩ
L
BE
R = 1.5 kΩ, R = ∞
I = 1.0mA,
F
L
BE
V
= 5.0V
CC
R = 10 kΩ, R = 160kΩ
L
BE
V
= 0.4V, V = 5V,
I = 5mA
MCT5201M
30
CE
CC
F
R = fig. 13, R = 330kΩ
L
BE
T
Propagation Delay
LOW-to-HIGH
R = 330 Ω, R = ∞
I = 3.0mA, MCT5210M
0.4
8
µs
PLH
L
BE
F
(4)
V
= 5.0V
CC
R = 3.3 kΩ, R = 39kΩ
L
BE
R = 750 Ω, R = ∞
I = 1.6mA, MCT5211M
2.5
11
7
L
BE
F
V
= 5.0V
CC
R = 4.7 kΩ, R = 91kΩ
L
BE
R = 1.5 kΩ, R = ∞
I = 1.0mA,
F
L
BE
V
= 5.0V
CC
R = 10 kΩ, R = 160kΩ
16
12
L
BE
V
= 0.4V, V = 5V,
I = 5mA
MCT5201M
MCT5201M
MCT5201M
MCT5201M
MCT5201M
13
15
20
13
30
CE
CC
F
R = fig. 13, R = 330kΩ
L
BE
(5)
t
t
Delay Time
V
= 0.4V, R = 330kΩ, I = 5mA
1.1
2.5
10
µs
µs
µs
µs
d
CE
BE
F
R = 1 kΩ, V = 5V
L
CC
(6)
t
Rise Time
V
= 0.4V, R = 330kΩ, I = 5mA
CE BE F
r
R = 1 kΩ, V = 5V
L
CC
(7)
Storage Time
V
= 0.4V, R = 330 kΩ, I = 5mA
CE BE F
s
R = 1 kΩ, V = 5V
L
CC
(8)
t
Fall Time
V
= 0.4V, R = 330 kΩ, I = 5mA
16
f
CE
BE
F
R = 1 kΩ, V = 5V
L
CC
*All typicals at T = 25°C
A
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
4
Notes:
1. DC Current Transfer Ratio (CTR ) is defined as the transistor collector current (I ) divided by the input LED
CE
CE
current (I ) x 100%, at a specified voltage between the collector and emitter (V ).
F
CE
2. The collector base Current Transfer Ratio (CTR ) is defined as the transistor collector base photocurrent(I
)
CB
CB
divided by the input LED current (I ) time 100%.
F
3. Referring to Figure 14 the T
propagation delay is measured from the 50% point of the rising edge of the data
PHL
input pulse to the 1.3V point on the falling edge of the output pulse.
4. Referring to Figure 14 the T propagation delay is measured from the 50% point of the falling edge of data input
PLH
pulse to the 1.3V point on the rising edge of the output pulse.
5. Delay time (t ) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.
d
6. Rise time (t ) is measured from 90% to 10% of Vo falling edge.
r
7. Storage time (t ) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.
s
8. Fall time (t ) is measured from 10% to 90% of Vo rising edge.
f
9. C
is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).
ISO
10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted
together.
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
5
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
I-IV
I-IV
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
V
Input to Output Test Voltage, Method b,
1594
V
V
PR
peak
V
x 1.875 = V , 100% Production Test
IORM
PR
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
1275
peak
V
x 1.5 = V , Type and Sample Test
PR
IORM
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
V
850
6000
7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
Ω
External Clearance
7
Insulation Thickness
0.5
9
RIO
Insulation Resistance at Ts, V = 500V
10
IO
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
6
Typical Performance Curves
Fig. 2 Normalized Current Transfer Ratio vs.
Forward Current
Fig. 1 LED Forward Voltage vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
T
A
= -40°C
1.2
1.0
0.8
T
A
= 25°C
Normalized to:
I
V
= 5mA
= 5V
F
CE
T
A
= 100°C
T
= 25°C
A
0.1
1
10
100
0.1
1
10
I – FORWARD CURRENT (mA)
F
I
F
– LED FORWARD CURRENT (mA)
Fig. 4 Normalized Collector vs.
Collector-Emitter Voltage
Fig. 3 Normalized CTR vs.Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1
Normalized to:
I
V
= 5mA
= 5V
F
CE
I
= 10mA
F
I
F
= 5mA
= 2mA
I
F
= 10mA
I
F
= 5mA
T
= 25°C
A
I
= 2mA
= 1mA
F
0.1
I
F
I
F
I
= 0.5mA
F
0.01
0.001
0.0001
I
I
= 1mA
I
= 0.2mA
F
F
F
= 0.5mA
Normalized to:
= 5mA
I
F
I
= 0.2mA
F
V
= 5V
CE
T
= 25°C
A
-40
-20
100 120
– AMBIENT TEMPERATURE (°C)
-20
0
20
40
60
0.1
1
10
T
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
A
Fig. 5 Normalized Collector Base Photocurrent
Ratio vs. Forward Current
Fig. 6 Normalized Collector-Base Current
vs.Temperature
100
10
1
I
= 10mA
= 5mA
F
I
F
10
1
I
F
= 2mA
0.1
I
F
= 1mA
I
= 0.5mA
= 0.2mA
F
Normalized to:
= 5mA
0.1
0.01
Normalized to:
= 5mA
I
F
I
F
I
F
V
= 4.3V
CB
V
= 4.3V
CB
T
A
= 25°C
T
= 25°C
A
0.01
0.001
-60 -40
-20
0
20
40
60
80 100
0.1
1
10
100
T
A
– AMBIENT TEMPERATURE (°C)
I
– FORWARD CURRENT (mA)
F
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
7
Typical Performance Curves (Continued)
Fig. 7 Collector-Emitter Dark Current vs.
Fig. 8 Switching Time vs.
Ambient Temperature
Ambient Temperature
30
25
20
15
10
5
10000
I
V
= 0mA
Refer to Figure 13 for switching time circuit
I
= 10mA
= 5V
F
F
CC
= 10V
V
R
R
CE
= 1kΩ
L
1000
100
10
= 330kΩ
BE
t
f
t
PLH
t
s
1
t
d
t
t
r
PHL
0
-40
0.1
-20
0
20
40
60
80
100 120
0
10 20 30 40 50 60 70 80 90 100
T
– AMBIENT TEMPERATURE (°C)
T
– AMBIENT TEMPERATURE (°C)
A
A
Fig. 10 Switching Time vs.
Ambient Temperature
Fig. 9 Switching Time vs.
Ambient Temperature
30
25
20
15
10
5
20
16
12
8
I
V
R
R
= 10mA
I = 5mA
F
Refer to Figure 13 for switching time circuit
F
Refer to Figure 13 for switching time circuit
= 5V
V
= 5V
CC
CC
= 1kΩ
R
R
= 1kΩ
BE
L
L
= 100kΩ
= 330kΩ
BE
t
f
t
f
t
t
PLH
PLH
t
s
t
s
4
t
t
PHL
r
t
r
t
d
t
t
d
PHL
0
-40
0
-40
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100 120
T
A
– AMBIENT TEMPERATURE (°C)
T
– AMBIENT TEMPERATURE (°C)
A
Fig. 11 Switching Time vs.
Ambient Temperature
Fig. 12 Switching Time vs.
Base-Emitter Resistance
20
100
10
1
I
V
R
R
= 5mA
F
Refer to Figure 13 for switching time circuit
t
I
R
PLH
= 5V
CC
= 1.6mA
F
t
, I = 1mA, R = 10kΩ
PLH
F
L
= 1kΩ
L
16
12
8
= 4.7kΩ
L
= 100kΩ
BE
t
I
R
PLH
= 3mA
F
= 3.3kΩ
L
t
f
t
, I = 1mA, R = 10kΩ
PHL
F
L
t
PLH
t
, I = 1.6mA, R = 4.7kΩ
F L
PHL
t
s
t
, I = 3mA, R = 3.3kΩ
PHL
F
L
4
V
T
= 5V
CC
t
t
r
PHL
= 25°C
A
t
d
0
-40
10
100
1000
10000
-20
0
20
40
60
80
100 120
T
A
– AMBIENT TEMPERATURE (°C)
R
BE
– BASE-EMITTER RESISTANCE (kΩ)
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
8
Typical Electro-Optical Characteristics (T = 25°C unless otherwise specified)
A
VCC = 5.0 V
VCC = 5.0 V
Pulse Gen
ZO = 50Ω
f = 10KHz
10% D.F.
Pulse Gen
ZO = 50Ω
f = 10KHz
10% D.F.
1K
1K
VO
4.7K
VO
D2
D3
D4
D1
IF monitor
IF monitor
330K
330K
100 Ω
100 Ω
tr, tf, td, ts
TEST CIRCUIT
t
PHL, tPLH
TEST CIRCUIT
Figure 13.
INPUT
(IF)
50%
td
0
90%
tPHL
90%
OUTPUT
(VO)
tPLH
1.3 V
1.3 V
10%
10%
0
tr
ts
tf
Figure 14. Switching Circuit Waveforms
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
9
Package Dimensions
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
1
3
5.08 (Max.)
3.28–3.53
0.25–0.36
7.62 (Typ.)
5.08 (Max.)
3.28–3.53
0.25–0.36
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.20–0.30
(0.86)
15° (Typ.)
(0.86)
0.41–0.51
0.76–1.14
0.20–0.30
10.16–10.80
1.02–1.78
0.41–0.51
0.76–1.14
1.02–1.78
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.20–0.30
0.38 (Min.)
0.16–0.88
(8.13)
2.54 (Bsc)
(0.86)
0.41–0.51
0.76–1.14
1.02–1.78
Note:
All dimensions in mm.
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
10
Ordering Information
Order Entry Identifier
Option
(Example)
Description
Standard Through Hole Device (50 units per tube)
Surface Mount Lead Bend
No suffix
MCT5201M
S
SR2
T
MCT5201SM
MCT5201SR2M
MCT5201TM
MCT5201VM
MCT5201TVM
MCT5201SVM
MCT5201SR2VM
Surface Mount; Tape and Reel (1,000 units per reel)
0.4" Lead Spacing
V
IEC60747-5-2
TV
IEC60747-5-2, 0.4" Lead Spacing
IEC60747-5-2, Surface Mount
SV
SR2V
IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel)
Marking Information
1
2
MCT5201
6
V X YY Q
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with
date code ‘325’ or earlier are marked in portrait format.
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
11
Carrier Tape Specification
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
0.30 ± 0.05
4.0 ± 0.1
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
1.822°C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
12
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intended to be an exhaustive list of all such trademarks.
PowerTrench®
PowerXS™
The Power Franchise®
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Programmable Active Droop™
QFET®
TinyBoost™
TinyBuck™
QS™
Quiet Series™
RapidConfigure™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
SMART START™
SPM®
®
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OPTOPLANAR®
FAST®
®
FastvCore™
FETBench™
PDP SPM™
Power-SPM™
Sync-Lock™
FlashWriter®
®
*
*
FPS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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As used herein:
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under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
www.fairchildsemi.com
13
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