MMBT5089L99Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | MMBT5089L99Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon 放大器 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discrete POWER & Signal
Technologies
2N5088
2N5089
MMBT5088
MMBT5089
C
E
TO-92
C
B
B
SOT-23
Mark: 1Q / 1R
E
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
Collector-Base Voltage
2N5088
2N5089
2N5088
2N5089
30
25
35
30
4.5
V
V
V
V
V
VCBO
VEBO
IC
Emitter-Base Voltage
Collector Current - Continuous
100
mA
Operating and Storage Junction Temperature Range
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5088
2N5089
*MMBT5088
*MMBT5089
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
mW
mW/°C
°C/W
Rθ
JC
Rθ
Thermal Resistance, Junction to Ambient
200
357
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
ICBO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
30
25
35
30
V
V
V
V
nA
nA
nA
nA
Collector-Base Breakdown Voltage
Collector Cutoff Current
IC = 100 µA, IE = 0
VCB = 20 V, IE = 0
VCB = 15 V, IE = 0
VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0
50
50
50
IEBO
Emitter Cutoff Current
100
ON CHARACTERISTICS
hFE
DC Current Gain
300
400
350
450
300
400
900
1200
IC = 100 µA, VCE = 5.0 V 2N5088
2N5089
IC = 1.0 mA, VCE = 5.0 V 2N5088
2N5089
IC = 10 mA, VCE = 5.0 V* 2N5088
2N5089
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, IB = 1.0 mA
0.5
0.8
V
V
VCE(sat)
VBE(on)
IC = 10 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
50
MHz
IC = 500 µA,VCE = 5.0 mA,
f = 20 MHz
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
VCB = 5.0 V, IE = 0, f = 100 kHz
4.0
10
pF
pF
Ccb
Ceb
hfe
VBE = 0.5 V, IC = 0, f = 100 kHz
IC = 1.0 mA, VCE = 5.0 V, 2N5088
350
450
1400
1800
3.0
f = 1.0 kHz
2N5089
NF
Noise Figure
dB
dB
IC = 100 µA, VCE = 5.0 V, 2N5088
2.0
RS = 10 kΩ,
2N5089
f = 10 Hz to 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271
Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n
Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10)
NPN General Purpose Amplifier
(continued)
DC Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
0.3
400
Vce=5V
125 °C
350
0.25
0.2
β
= 10
300
250
125 °C
200
0.15
0.1
25 °C
150
25 °C
- 40 °C
100
- 40 °C
50
0
0.05
0.01 0.03 0.1 0.3
1
3
10
30
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
1
0.8
0.6
0.4
0.2
- 40 °C
25 °C
- 40 °C
25 °C
125 °C
125 °C
β
= 10
V CE = 5V
0.1
1
10
100
0.1
1
10
40
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
10
VCB = 45V
1
0.1
25
50
75
100
125
150
º
TA- AMBIENT TEMPERATURE ( C)
NPN General Purpose Amplifier
(continued)
AC Typical Characteristics
Input / Output Capacitance
vs. Reverse Bias Voltage
Contours of Constant Gain
Bandwidth Product (fT)
Wideband Noise Figure
vs. Source Resistance
Normalized Collector Cutoff
Current vs. Ambient Temperature
Contours of Constant
Narrow Band Noise Figure
Noise Figure vs. Frequency
NPN General Purpose Amplifier
(continued)
AC Typical Characteristics (continued)
Contours of Constant
Contours of Constant
Narrow Band Noise Figure
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
Maximum Power Dissipation
vs. Ambient Temperature
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics (f = 1.0 kHz)
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