RMPA29000 [FAIRCHILD]

27-30 GHZ 1 Watt Power Amplifier MMIC; 27-30 GHZ 1瓦功率放大器MMIC
RMPA29000
型号: RMPA29000
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

27-30 GHZ 1 Watt Power Amplifier MMIC
27-30 GHZ 1瓦功率放大器MMIC

放大器 功率放大器
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中文:  中文翻译
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June 2004  
RMPA29000  
27–30 GHZ 1 Watt Power Amplifier MMIC  
General Description  
Features  
The Fairchild Semiconductor’s RMPA29000 is a high  
efficiency power amplifier designed for use in point to point  
and point to multi-point radios, and various communi-  
cations applications. The RMPA29000 is a 3-stage GaAs  
MMIC amplifier utilizing our advanced 0.15µm gate length  
Power PHEMT process and can be used in conjunction  
with other driver or power amplifiers to achieve the required  
total power output.  
• 23dB small signal gain (typ.)  
• 30dBm Pout at 1dB compression (typ.)  
• Circuit contains individual source vias  
• Chip size 5.20mm x 2.95mm  
Device  
Absolute Ratings  
Symbol  
Parameter  
Positive DC Voltage (+5V Typical)  
Negative DC Voltage  
Ratings  
Units  
V
Vd  
Vg  
+6  
-2  
V
Vdg  
Simultaneous (Vd–Vg)  
+8  
V
I
Positive DC Current  
1092  
mA  
dBm  
°C  
D
P
RF Input Power (from 50source)  
Operating Baseplate Temperature  
Storage Temperature Range  
Thermal Resistance (Channel to Backside)  
+18  
IN  
T
T
-30 to +85  
-55 to +125  
20  
C
°C  
STG  
R
°C/W  
JC  
©2004 Fairchild Semiconductor Corporation  
RMPA29000 Rev. D  
Electrical Characteristics (At 25°C), 50system, Vd = +5V, Quiescent current (Idq) = 700mA  
Parameter  
Min  
Typ  
Max  
Units  
GHz  
V
Frequency Range  
27  
30  
1
Gate Supply Voltage (Vg)  
-0.4  
23  
Gain Small Signal (Pin = -1dBm)  
Gain Variation vs. Frequency  
18  
dB  
±1  
dB  
Power Output at 1dBm Compression  
Power Output Saturated: (Pin = +10.5dBm)  
Drain Current at Pin = -1dBm  
30  
dBm  
dBm  
mA  
mA  
%
28.5  
30.5  
700  
850  
23  
Drain Current at P1dB Compression  
Power Added Efficiency (PAE): at P1dB  
OIP3 (16dBm/tone)  
37  
dBm  
dB  
Input Return Loss (Pin = -1dBm)  
Output Return Loss (Pin = -1dBm)  
10  
10  
dB  
Note:  
1. Typical range of negative gate voltages is -0.9 to 0.0V to set typical Idq of 700 mA.  
©2004 Fairchild Semiconductor Corporation  
RMPA29000 Rev. D  
Application Information  
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.  
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal  
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with  
gold over nickel and should be capable of withstanding 325°C for 15 minutes.  
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT  
devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.  
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of  
bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of  
wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges  
through the device.  
Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for  
appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap  
between the chip and the substrate material.  
DRAIN SUPPLY  
(VDA & VDB)  
MMIC CHIP  
RF IN  
RF OUT  
GROUND  
(Back of the Chip)  
GATE SUPPLY  
(VGA & VGB)  
Figure 1. Functional Block Diagram  
2.946  
2.672  
1.651  
1.461  
1.285  
0.254  
0.0  
5.210  
5.072  
0.236  
0.122  
4.445  
Dimensions in mm  
Figure 2. Chip Layout and Bond Pad Locations  
(Chip Size is 5.210mm x 2.946mm x 50µm Typical. Back of chip is RF and DC Ground)  
©2004 Fairchild Semiconductor Corporation  
RMPA29000 Rev. D  
DRAIN SUPPLY (Vd = +5V)  
(Connect to both VDA & VDB)  
10000pF  
L
100pF  
BOND WIRE Ls  
L
MMIC CHIP  
RF IN  
RF OUT  
L
GROUND  
(Back of Chip)  
100pF  
BOND WIRE Ls  
L
10000pF  
GATE SUPPLY (Vg)  
(VGA and/or VGB)  
Figure 3. Recommended Application Schematic Circuit Diagram  
©2004 Fairchild Semiconductor Corporation  
RMPA29000 Rev. D  
Vd (POSITIVE)  
Vg (NEGATIVE)  
DIE-ATTACH  
80Au/20Sn  
10000pF  
10000pF  
2 MIL GAP  
100pF  
100pF  
5 MIL THICK  
ALUMINA  
5 MIL THICK  
ALUMINA  
50Ω  
50Ω  
RF OUTPUT  
RF INPUT  
100pF  
100pF  
10000pF  
10000pF  
L < 0.015"  
(4 Places)  
Vg (NEGATIVE)  
Vd (POSITIVE)  
Note:  
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.  
Vd should be biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply.  
Figure 4. Recommended Assembly and Bonding Diagram  
©2004 Fairchild Semiconductor Corporation  
RMPA29000 Rev. D  
Recommended Procedure for Biasing and Operation  
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE  
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE  
AMPLIFIER CHIP.  
Step 4: Adjust gate bias voltage to set the quiescent  
current of Idq = 700mA.  
Step 5: After the bias condition is established, the RF input  
signal may now be applied at the appropriate frequency  
band.  
The following sequence of steps must be followed to  
properly test the amplifier.  
Step 1: Turn off RF input power.  
Step 6: Follow turn-off sequence of:  
(i) Turn off RF input power,  
(ii) Turn down and off drain voltage (Vd),  
(iii) Turn down and off gate bias voltage (Vg).  
Step 2: Connect the DC supply grounds to the ground of  
the chip carrier. Slowly apply negative gate bias supply  
voltage of -1.5V to Vg.  
Note: An example auto bias sequencing circuit to apply  
negative gate voltage and positive drain voltage for the  
above procedure is shown below.  
Step 3: Slowly apply positive drain bias supply voltage of  
+5V to Vd.  
D3  
D1N6098  
+6V  
D2  
D1N6098  
C1  
0.1µF  
R1  
3.0k  
R3  
1.0k  
+
0
*
U2  
V+  
LM2941T  
1
2
AD820/AD  
3
2
U1A  
7400  
CNT  
V-  
5
4
3
+2.62V  
IN  
OUT  
MMIC_+VDD  
GND  
C3  
22µF  
C2  
0.47µF  
R4  
1.2k  
R2  
6.8k  
0
0
ADJ  
1
0
R6  
1k  
R5  
3k  
0
0
*Adj. For –Vg  
R7  
–5V  
MMIC_–VG  
C4  
0.1µF  
C5  
0.1µF  
*
R8  
1.0k  
–5V Off: +3.33V  
–5V Off: +1.80V  
8.2k  
0
0
0
©2004 Fairchild Semiconductor Corporation  
RMPA29000 Rev. D  
Typical Characteristics  
RMPA29000 SS Gain vs. Frequency  
Vd = 5V, Idq = 700mA  
25  
24  
23  
22  
21  
20  
19  
18  
26  
27  
28  
29  
30  
31  
FREQUENCY (GHz)  
RMPA29000 P1dB vs. Frequency  
Vd = 5V, Idq = 700mA  
31.0  
30.5  
30.0  
29.5  
29.0  
28.5  
28.0  
25  
26  
27  
28  
29  
30  
31  
32  
FREQUENCY (GHz)  
RMPA29000 Power Out vs. Power In  
Idq = 700mA  
31.00  
30.00  
29.00  
28.00  
27.00  
26.00  
25.00  
24.00  
23.00  
22.00  
21.00  
29 GHz  
27 GHz  
28 GHz  
30 GHz  
Fixture Data  
-1.00  
1.00  
3.00  
5.00  
7.00  
9.00  
11.00  
Pin (dBm)  
©2004 Fairchild Semiconductor Corporation  
RMPA29000 Rev. D  
Typical Characteristics (Continued)  
RMPA29000 Gain vs. Pin  
Vd = 5V, Idq = 700mA  
25.00  
24.50  
27 GHz  
24.00  
23.50  
28 GHz  
23.00  
29 GHz  
30 GHz  
22.50  
22.00  
21.50  
21.00  
20.50  
20.00  
Fixture data  
7.00  
-1.00  
1.00  
3.00  
5.00  
9.00  
11.00  
Pin (dBm)  
RMPA29000 S21, S11, S22 Mag vs. Frequency  
Vd = 5V, Id = 700mA  
30  
S21  
20  
10  
0
S11  
S22  
-10  
-20  
-30  
26  
27  
28  
29  
30  
31  
FREQUENCY (GHz)  
RMPA29000 Ids vs. Pin  
1020  
970  
920  
870  
820  
770  
720  
670  
620  
28 GHz  
27 GHz  
29 GHz  
30 GHz  
Fixture data  
9.00  
-1.00  
1.00  
3.00  
5.00  
7.00  
11.00  
Pin (dBm)  
©2004 Fairchild Semiconductor Corporation  
RMPA29000 Rev. D  
Typical Characteristics (Continued)  
RMPA29000 OIP3 vs. Output Power/Tone  
10 MHz Tone Sep. Vds = 5V, Idq = 700mA  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
27 GHz  
28 GHz  
29 GHz  
30 GHz  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
OUTPUT POWER/TONE (dBm)  
©2004 Fairchild Semiconductor Corporation  
RMPA29000 Rev. D  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
Power247™  
PowerSaver™  
PowerTrench  
QFET  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
MSXPro™  
OCX™  
OCXPro™  
FAST  
FASTr™  
FPS™  
FRFET™  
GlobalOptoisolator™  
GTO™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
FACT™  
QS™  
QT Optoelectronics™ TinyLogic  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
TINYOPTO™  
TruTranslation™  
UHC™  
HiSeC™  
I2C™  
i-Lo™  
ImpliedDisconnect™  
UltraFET  
FACT Quiet Series™  
SILENT SWITCHER VCX™  
SMART START™  
SPM™  
OPTOLOGIC  
OPTOPLANAR™  
PACMAN™  
POP™  
Across the board. Around the world.™  
The Power Franchise  
ProgrammableActive Droop™  
Stealth™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY  
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY  
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT  
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I11  

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