MRF6S19100NR1 [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF6S19100NR1 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总16页 (文件大小：621K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S19100N
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100NR1
MRF6S19100NBR1
Designed for N-CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 950 mA,
Pout = 22 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
1930-1990 MHz, 22 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S19100NR1
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S19100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
-0.5, +68
-0.5, +12
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
287
1.64
W
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +175
200
°C
°C
stg
T
J
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 23 W CW
R
°C/W
θ
JC
0.61
0.65
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 330 μAdc)
V
V
1
2
2
3
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 950 mAdc)
2.8
0.24
5.3
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 3.3 Adc)
V
—
—
—
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 2.2 Adc)
g
fs
DS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
C
—
1.5
—
pF
rss
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 950 mA, P = 22 W Avg., f1 = 1930 MHz,
DD
DQ
out
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ 885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
G
13
14.5
25.5
-37
16
dB
ps
Drain Efficiency
η
D
24
36
%
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
ACPR
IRL
-47
-60
—
-35
-48
-10
dBc
dBc
dB
-51
-12
1. Part is internally matched both on input and output.
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
2
R1
V
BIAS
V
SUPPLY
+
C1
R2
C2
C3
C4
C5
C6
Z5
R3
Z12
Z11
RF
OUTPUT
Z6
Z7
Z8
Z9
Z10
RF
INPUT
Z1
Z2
Z3
Z4
C8
C7
DUT
V
SUPPLY
C9
C10
C11
Z1, Z10
Z2
Z3
Z4
Z5
0.743″ x 0.084″ Microstrip
0.818″ x 0.084″ Microstrip
0.165″ x 0.386″ Microstrip
0.505″ x 0.800″ Microstrip
0.323″ x 0.040″ Microstrip
0.160″ x 0.880″ Microstrip
Z7
Z8
Z9
Z11, Z12
PCB
0.319″ x 0.880″ Microstrip
0.355″ x 0.215″ Microstrip
0.661″ x 0.084″ Microstrip
1.328″ x 0.120″ Microstrip
Arlon AD250, 0.030″, ε = 2.5
r
Z6
Figure 1. MRF6S19100NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S19100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
Kemet
C1
10 μF, 35 V Tantalum Capacitor
100 nF Chip Capacitor (1206)
5.1 pF 600B Chip Capacitors
9.1 pF 600B Chip Capacitors
10 μF, 50 V Chip Capacitors
1 kΩ, 1/4 W Chip Resistor (1206)
10 kΩ, 1/4 W Chip Resistor (1206)
10 Ω, 1/4 W Chip Resistor (1206)
T491D106K035AS
C2
C3, C7
C4, C8, C9
600B5R1BT250XT
ATC
600B9R1BT250XT
ATC
C5, C6, C10, C11
GRM55DR61H106KA88L
Murata
R1
R2
R3
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
3
C2
R2
C3
C4
R1
C5 C6
R3
C1
C7
C8
C10 C11
C9
MRF6S19100N/NB, Rev. 5
Figure 2. MRF6S19100NR1(NBR1) Test Circuit Component Layout
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
15.8
27
26.5
26
15.7
15.6
15.5
15.4
15.3
15.2
15.1
15
η
D
25.5
25
G
ps
V
= 28 Vdc, P = 22 W (Avg.), I = 950 mA
out DQ
DD
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
−30
−36
−42
−12
−16
−20
−24
−28
−32
−36
IM3
IRL
−48
−54
−60
14.9
14.8
ACPR
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 22 Watts Avg.
15.4
36
35.5
35
15.3
15.2
15.1
15
η
D
V
= 28 Vdc, P = 40 W (Avg.)
out
= 950 mA, 2−Carrier N−CDMA
DD
I
DQ
34.5
34
G
ps
2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−25
−30
−35
14.9
14.8
14.7
14.6
14.5
14.4
−10
−15
−20
−25
−30
−35
−40
IM3
IRL
−40
−45
−50
ACPR
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 40 Watts Avg.
17
16
−10
I
= 1425 mA
DQ
V
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
DD
1190 mA
950 mA
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
15
14
13
1425 mA
I
= 475 mA
DQ
710 mA
475 mA
−40
−50
−60
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1190 mA
100
12
11
950 mA
710 mA
Two−Tone Measurements, 2.5 MHz Tone Spacing
1
10
100
300
1
10
P , OUTPUT POWER (WATTS) PEP
out
300
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
−10
−20
59
57
55
V
= 28 Vdc, P = 100 W (PEP), I = 950 mA
out DQ
Two−Tone Measurements
DD
Ideal
(f1 + f2)/2 = Center Frequency of 1960 MHz
P3dB = 52.156 dBm (164.29 W)
−30
−40
−50
−60
P1dB = 51.13 dBm (129.72 W)
3rd Order
5th Order
53
51
49
47
45
Actual
V
DD
= 28 Vdc, I = 950 mA
DQ
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
7th Order
0.1
1
10
100
30
32
34
36
38
40
42
TWO−TONE SPACING (MHz)
P , INPUT POWER (dBm)
in
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
50
−20
V
= 28 Vdc, I = 950 mA
DQ
T = 85_C
DD
C
−30_C
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
85_C
−30
40
30
20
10
IM3
25_C
−30_C
@ 0.01% Probability (CCDF)
−40
−50
−60
−70
η
D
ACPR
G
ps
−30_C
25_C
85_C
0
1
10
, OUTPUT POWER (WATTS) AVG.
100
200
P
out
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
70
16
18
17
−30_C
G
ps
60
T = −30_C
C
15
25_C
85_C
50
25_C
85_C
16
15
14
40
13
30
14
32 V
24 V
28 V
η
D
V
= 28 Vdc
= 950 mA
12
20 V
DD
16 V
20
13
12
I
DQ
f = 1960 MHz
11
10
V
DD
= 12 V
I
= 950 mA
f = 1960 MHz
10
0
DQ
11
0
50
100
P , OUTPUT POWER (WATTS) CW
out
150
200
1
10
, OUTPUT POWER (WATTS) CW
100
300
P
out
Figure 11. Power Gain versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
9
8
7
6
10
10
10
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 12. MTTF Factor versus Junction Temperature
N-CDMA TEST SIGNAL
100
10
0
1.2288 MHz
Channel BW
−10
−20
−IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1
−30
−40
−50
−60
−70
−80
−90
−100
0.1
0.01
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.001
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
−7.5 −6 −4.5 −3
−1.5
0
1.5
3
4.5
6
7.5
Figure 13. 2-Carrier CCDF N-CDMA
f, FREQUENCY (MHz)
Figure 14. 2-Carrier N-CDMA Spectrum
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
7
Z = 5 Ω
o
Z
load
f = 1930 MHz
f = 1990 MHz
f = 1990 MHz
f = 1930 MHz
Z
source
V
DD
= 28 Vdc, I = 950 mA, P = 22 W Avg.
DQ out
f
Z
Z
load
source
MHz
Ω
Ω
1930
1960
1990
2.51 - j4.80
2.31 - j4.54
2.12 - j4.20
1.74 - j3.11
1.67 - j2.85
1.63 - j2.55
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
8
NOTES
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF6S19100NR1 MRF6S19100NBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
b1
M
aaa
C A
2X
D2
2X
E
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
F
DATUM
PLANE
ZONE J
H
c1
A
A1
2X
E2
A2
NOTE 7
SEATING
C
PLANE
E5
E4
PIN 5
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
NOTE 8
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.54
0.99
1.02
MAX
2.64
1.09
1.07
18.29
17.58
0.48
− − −
14.2
9.07
3.56
3.35
− − −
A
A1
A2
D
.100
.039
.040
.712
.688
.011
.600
.551
.353
.132
.124
.270
.346
.104
.043
.042
.720 18.08
.692 17.48
4
1
2
D1
D2
D3
E
.019
− − −
0.28
15.24
14
8.97
3.35
3.15
6.86
8.79
.559
.357
.140
.132
− − −
D3
E1
E2
E3
E4
E5
F
3
.350
8.89
.025 BSC
0.64 BSC
b1
c1
e
.164
.007
.170
.011
4.17
0.18
4.32
0.28
.106 BSC
.004
2.69 BSC
0.10
aaa
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
CASE 1486-03
ISSUE C
E5
BOTTOM VIEW
TO-270 WB-4
PLASTIC
MRF6S19100NR1
MRF6S19100NR1 MRF6S19100NBR1
12
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
13
MRF6S19100NR1 MRF6S19100NBR1
14
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
15
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Document Number: MRF6S19100N
Rev. 1, 5/2006
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