MRF6S19120HR3 [FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
| 型号： | MRF6S19120HR3 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors |
| 文件： | 总12页 (文件大小：444K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6S19120H
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19120HR3
MRF6S19120HSR3
Designed for N-CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ
=
1000 mA, Pout = 19 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15 dB
1930-1990 MHz, 19 W AVG., 28 V
SINGLE N-CDMA
Drain Efficiency — 21.5%
LATERAL N-CHANNEL
RF POWER MOSFETs
ACPR @ 885 kHz Offset — -54 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 465-06, STYLE 1
NI-780
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
MRF6S19120HR3
Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465A-06, STYLE 1
NI-780S
MRF6S19120HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
-0.5, +68
-0.5, +12
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
407
2.3
W
W/°C
C
D
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
- 65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 73°C, 19 W CW
R
θ
JC
°C/W
0.43
0.45
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 270 μAdc)
V
V
1
2
2
3
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 1000 mAdc)
2.8
0.21
6.9
DS
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 2.7 Adc)
V
—
—
0.3
—
GS
D
Forward Transconductance
(V = 10 Vdc, I = 2.7 Adc)
g
fs
DS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
C
rss
—
1.95
—
pF
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1000 mA, P = 19 W Avg. N-CDMA, f = 1990 MHz,
DD
DQ
out
Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G
14
20
—
—
15
21.5
-54
-13
17
—
dB
%
ps
Drain Efficiency
η
D
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
-48
-9
dBc
dB
1. Part is internally matched both on input and output.
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
2
V
V
SUPPLY
BIAS
+
+
+
+
+
B1
R2
C4
C6
C8
C10 C11 C12 C13 C14
+
R1
C9 C5 C7
C3
RF
OUTPUT
Z6
Z7
Z8
Z9
Z10
RF
INPUT
C2
Z1
Z2
Z3
Z5
Z4
C1
DUT
Z1
1.242″ x 0.084″ Microstrip
0.839″ x 0.084″ Microstrip
0.230″ x 0.180″ Microstrip
0.320″ x 1.100″ Microstrip
0.093″ x 1.100″ Microstrip
0.160″ x 1.098″ Microstrip
Z7
Z8
Z9
Z10
PCB
0.387″ x 1.098″ Microstrip
0.169″ x 0.316″ Microstrip
0.781″ x 0.084″ Microstrip
1.228″ x 0.084″ Microstrip
Z2
Z3
Z4
Z5
Z6
Arlon GX-0300-55-22, 0.030″, ε = 2.55
r
Figure 1. MRF6S19120HR3(SR3) Test Circuit Schematic
Table 5. MRF6S19120HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1, C2
C3, C4
C5, C6
C7, C8
C9
10 pF Chip Capacitors
100B100JP50X
ATC
5.1 pF Chip Capacitors
100B5R1CP50X
ATC
1.0 nF Chip Capacitors
100B102JP50X
ATC
0.1 μF Chip Capacitors
C1825C100J5RAC
T491X106K035AS
GRM55DR61H106KA88L
T491C105K022AS
MCR63V470M8X11
CRCW1206560F100
CRCW1206010F100
Kemet
Kemet
Murata
Kemet
Multicomp
Vishay
Vishay
10 μF, 35 V Tantalum Chip Capacitor
10 μF, 35 V Tantalum Chip Capacitors
22 μF, 50 V Tantalum Chip Capacitors
470 μF, 63 V Electrolytic Capacitor, Radial
560 KW, 1/4 W Chip Resistor (1206)
10 W, 1/4 W Chip Resistor (1206)
C10, C11
C12, C13
C14
R1
R2
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
3
C13
C11 C10
C4
C9
B1 R2
C6 C8
C3
C5 C7
C1
C12
R1
C14
C2
MRF6S19120 Rev. 0
Figure 2. MRF6S19120HR3(SR3) Test Circuit Component Layout
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
26
15.6
15.4
15.2
24
η
D
22
20
V
= 28 Vdc, P = 19 W (Avg.), I = 1000 mA
out DQ
15
G
ps
DD
Single−Carrier N−CDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB @ 0.01%
Probability (CCDF)
−45
14.8
−10
−12
IRL
14.6
14.4
14.2
14
−50
−55
−60
−65
−14
−16
−18
−20
−22
−24
−26
ACPR
ALT1
1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 19 Watts Avg.
32
15.6
15.4
15.2
30
η
D
28
26
15
G
ps
V
DD
= 28 Vdc, P = 32 W (Avg.), I = 1000 mA
out DQ
−35
14.8
Single−Carrier N−CDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
−10
−12
IRL
14.6
14.4
14.2
14
−40
−45
−50
−55
−14
−16
−18
−20
−22
−24
−26
ACPR
ALT1
1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 32 Watts Avg.
17
−20
V
= 28 Vdc
f1 = 1988.75 MHz, f2 = 1991.25 MHz
DD
I
= 1500 mA
DQ
−25
−30
−35
Two−Tone Measurements, 2.5 MHz Tone Spacing
16
15
14
13
12
1250 mA
I
= 500 mA
DQ
1500 mA
1000 mA
750 mA
750 mA
−40
−45
−50
500 mA
V
= 28 Vdc
DD
f1 = 1988.75 MHz, f2 = 1991.25 MHz
1250 mA
100
1000 mA
Two−Tone Measurements, 2.5 MHz Tone Spacing
−55
0.6
1
10
100
300
0.6
1
10
, OUTPUT POWER (WATTS) PEP
300
P
P
, OUTPUT POWER (WATTS) PEP
out
out
Figure 6. Third Order Intermodulation Distortion
versus Output Power
Figure 5. Two-Tone Power Gain versus
Output Power
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
0
63
62
61
60
59
58
57
56
V
= 28 Vdc, P = 100 W (PEP), I = 1000 mA
out DQ
Two−Tone Measurements
DD
−10
−20
−30
−40
Ideal
(f1 + f2)/2 = Center Frequency of 1990 MHz
P3dB = 52.64 dBm (183.69 W)
3rd Order
5th Order
55 P1dB = 51.9 dBm (154.32 W)
Actual
54
53
52
51
50
49
48
47
V
= 28 Vdc, I = 1000 mA
DQ
DD
−50
−60
7th Order
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 1990 MHz
0.1
1
10
100
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
TWO−TONE SPACING (MHz)
P , INPUT POWER (dBm)
in
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
50
−20
V
= 28 Vdc, I = 1000 mA
DQ
η
D
DD
f = 1990 MHz, Single−Carrier N−CDMA
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01%
ACPR
−30
40
30
20
10
25_C
Probability (CCDF)
−40
25_C
85_C
ALT1
−50
−30_C
G
T
= 25_C
ps
C
−60
25_C
85_C
−70
0
−30_C
−10
−80
1
10
, OUTPUT POWER (WATTS) AVG.
100 150
P
out
Figure 9. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
16
18
17
16
15
14
13
12
11
70
−30_C
15
14
13
12
11
60
50
40
T
= −30_C
C
25_C
85_C
V
= 32 V
DD
G
ps
25_C
85_C
28 V
24 V
30
20
10
0
10
20 V
9
8
7
16 V
V
= 28 Vdc
= 1000 mA
DD
η
I
= 1000 mA
f = 1990 MHz
D
DQ
I
DQ
f = 1990 MHz
12 V
50
6
0
100
150 200
1
10
, OUTPUT POWER (WATTS) CW
100
P
P
, OUTPUT POWER (WATTS) CW
out
out
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
9
10
8
10
7
10
90 100 110 120 130 140 150 160 170 180 190 200 210
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
2
MTTF factor by I for MTTF in a particular application.
D
Figure 12. MTTF Factor versus Junction Temperature
N-CDMA TEST SIGNAL
100
10
−10
−20
−30
1.2288 MHz
Channel BW
.
.
.
.
.
. .
..
. .
... .. . .
.. ..
.
.
.. . .. ..
.
.
.
.
. .
.
. .
. . . .
.
.
.
. .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
−ALT1 in 12.5 kHz .
+ALT1 in 12.5 kHz
Integrated BW
1
.
−40
−50
−60
−70
−80
.
.
.
Integrated BW
.
.
.
.
.
.
.
.
.
.
.
.
.
0.1
0.01
.
.
.
..
.
.
.
.
.
.
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. ALT1 Measured in 12.5 kHz
Bandwidth @ 1.25 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
..
. .
.
.
.
. .
. ..
. . .
.
. .
.
.
.. ..
. . .
. .
... .
. .
.
.
.
.
..
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...
.
.
. ..
. ..
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.
.
..
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..
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...
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.
..
..
.
..
.
.. .
.
..
0.001
...
.
..
.
.
..
.
.
..
.. .
.
..
.
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW Integrated BW
.
.
. .
. .
.
..
..
.
. .
.
.
.
.....
. ..
.
.
. . .
..
. .
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. ..
. .
. ..
.
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.. .
..
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...
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....
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..
−90 .
. .
.
0.0001
0
2
4
6
8
10
−100
PEAK−TO−AVERAGE (dB)
−110
−3.6 −2.9 −2.2 −1.5 −0.7
Figure 13. Single-Carrier CCDF N-CDMA
0
0.7 1.5
2.2 2.9 3.6
f, FREQUENCY (MHz)
Figure 14. Single-Carrier N-CDMA Spectrum
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
7
f = 2020 MHz
Z = 10 Ω
o
Z
load
f = 1930 MHz
f = 2020 MHz
Z
source
f = 1930 MHz
V
= 28 Vdc, I = 1000 mA, P = 19 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
1930
1960
1990
3.03 - j5.14
2.94 - j4.54
2.75 - j4.34
1.52 - j1.77
1.51 - j1.37
1.38 - j1.20
2020
2.75 - j4.18
1.41 - j1.11
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
8
NOTES
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
B
G
2X
Q
1
M
M
M
B
bbb
T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
2
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
B
bbb
T
A
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
C
3.18
4.32
(LID)
R
(INSULATOR)
M
N
D
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
M
bbb
T
A
B
ccc
T
T
A
A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
aaa
B
ccc
T
A
B
M
19.66
19.60
3.00
19.96
20.00
3.51
H
N
Q
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
STYLE 1:
A
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465-06
ISSUE G
NI-780
MRF6S19120HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
2
B
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T
A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
−−−
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
C
D
E
(LID)
N
(LID)
R
F
M
M
M
M
ccc
T
A
B
M
M
M
B
H
ccc
T
A
K
(INSULATOR)
S
M
(INSULATOR)
M
N
M
M
M
M
M
B
aaa
T
A
B
bbb
T
A
R
S
H
U
Z
−−−
C
aaa
bbb
ccc
0.127 REF
0.254 REF
0.381 REF
3
F
SEATING
PLANE
E
A
STYLE 1:
T
PIN 1. DRAIN
2. GATE
5. SOURCE
CASE 465A-06
ISSUE H
A
(FLANGE)
NI-780S
MRF6S19120HSR3
MRF6S19120HR3 MRF6S19120HSR3
RF Device Data
Freescale Semiconductor
11
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Document Number: MRF6S19120H
Rev. 1, 5/2006
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