2SK3537-01MR [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET![2SK3537-01MR](http://pdffile.icpdf.com/pdf1/p00165/img/icpdf/2SK35_925099_icpdf.jpg)
型号: | 2SK3537-01MR |
厂家: | ![]() |
描述: | N-CHANNEL SILICON POWER MOSFET |
文件: | 总4页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2SK3537-01MR
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
150
Unit
V
Drain-source voltage
VDSX *5
ID
130
±33
±132
±20
33
V
Continuous drain current
Pulsed drain current
A
Equivalent circuit schematic
ID(puls]
VGS
A
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR *2
Drain(D)
A
EAS*1
169
20
mJ
kV/µs
kV/µs
W
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
5
°C
°C
2.16
Gate(G)
53
+150
-55 to +150
Source(S)
Operating and storage
temperature range
°C
°C
Tstg
<
*1 L=0.228mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=150°C
<
<
<
<
*4 VDS 150V *5 VGS=-20V
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
V
Drain-source breakdown voltaget
Gate threshold voltage
µ
150
ID=250 A
VGS=0V
VDS=VGS
V
µ
1.0
2.5
ID= 250 A
µA
VDS=150V VGS=0V
VDS=120V VGS=0V
25
250
100
90
Tch=25°C
Zero gate voltage drain current
IDSS
Tch=125°C
IGSS
nA
Gate-source leakage current
VGS=±20V
ID=11.5A
10
65
VDS=0V
VGS=4V
VGS=5V
VGS=10V
RDS(on)
Drain-source on-state resistance
mΩ
60
81
54
70
gfs
ID=11.5A VDS=25V
S
12
24
Forward transcondutance
Input capacitance
Ciss
1900
200
17
2850
300
pF
VDS=75V
VGS=0V
Coss
Crss
td(on)
tr
Output capacitance
25.5
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=48V ID=11.5A
ns
10
15
23
VGS=10V
15
85
128
18
td(off)
tf
Turn-off time toff
RGS=10 Ω
12
46
70
QG
nC
Total Gate Charge
VCC=48V
ID=23A
8
12
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
12.5
19
VGS=10V
33
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
µ
L=228 H Tch=25°C
1.10
1.65
VSD
trr
Qrr
V
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs
0.13
0.6
µs
µC
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
2.359
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1
2SK3537-01MR
FUJI POWER MOSFET
Characteristics
Maximum Avalanche Energy vs. starting Tch
EAS=f(starting Tch):Vcc=48V
Allowable Power Dissipation
PD=f(Tc)
500
400
300
200
100
0
60
55
50
45
40
35
30
25
20
15
10
5
IAS=14A
IAS=20A
IAS=33A
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Tc [°C]
starting Tch [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
55
50
45
40
35
30
25
20
15
10
5
5.0V
20V 10V 8V
4.5V
4.0V
VGS=3.5V
0.1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
100
10
1
0.16
VGS=3.5V
4.0V
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
4.5V
5.0V
8V
10V
20V
0.1
0.1
1
10
100
0
10
20
30
ID [A]
40
50
ID [A]
2
2SK3537-01MR
FUJI POWER MOSFET
Drain-Source On-state Resistance
Gate Threshold Voltage vs. Tch
RDS(on)=f(Tch):ID=11.5A,VGS=10V
VGS(th)=f(Tch):VDS=VGS,ID=1mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
max.
max.
typ.
min.
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=23A, Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
24
10n
1n
22
20
18
16
14
12
10
8
Ciss
Vcc= 48V
Coss
100p
10p
1p
Crss
6
4
2
0
10-1
100
101
102
103
0
10 20 30 40 50 60 70 80 90 100
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
103
102
101
100
100
10
1
td(off)
VGS=10V
VGS=0V
tf
td(on)
tr
0.1
10-1
100
101
102
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
ID [A]
3
2SK3537-01MR
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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