HMC324MS8G [HITTITE]
HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz; HBT双驱动器放大器的DC - 3.0 GHz的
| 型号： | HMC324MS8G |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz |
| 文件： | 总6页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC324MS8G
MICROWAVE CORPORATION
HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz
FEBRUARY 2001
V00.1200
Features
General Description
P1dB Output Power: + 16 dBm
The HMC324MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC amplifier that contains two un-connected
amplifiers in parallel inside an 8 lead MSOPG
package. When used in conjunction with an
external balun, the outputs of the amplifier can
be combined to reduce the 2nd harmonic distor-
tion that is generated by the amplifier. With Vcc
at +7.5V, the HMC324MS8G offers 13 dB of
gain and with power combining and harmonic
cancellation, +22 dBm of output power can be
achieved. Using a Darlington feedback pair re-
sults in reduced sensitivity to normal process
variations and provides a good 50-ohm input/
output port match. This amplifier is ideal for RF
systems where high linearity is required. The
design can operate in 50-ohm and 75-ohm sys-
tems which makes it ideal for CATV head-end
and modem, and MCNS applications.
1
Output IP3: +31 dBm
Single Supply: 8.75V
Ultra Small Package: MSOP8G
Guaranteed Performance, -40 to +60 deg C
Vs= 8.75V, RBIAS= 22 Ohm
Parameter
Min.
Typ.
DC - 3.0
13
Max.
Units
GHz
dB
Frequency Range
Gain @ 25 °C
10
16
Gain Variation over Temperature
Input Return Loss
0.015
13
0.025
dB/ °C
dB
8
Output Return Loss
6
9
dB
Reverse Isolation
16
13
16
28
20
dB
Output Power for 1dB Compression (P1dB) @ 1 GHz
Saturated Output Power (Psat) @ 1 GHz
Output Third Order Intercept (IP3) @ 1 GHz
Noise Figure
16
dBm
dBm
dBm
dB
19
31
6
Supply Current (Icc)
57
mA
Note: All specifications refer to a single amplifier.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 156
HMC324MS8G
MICROWAVE CORPORATION
HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz
V00.1200
FEBRUARY 2001
Gain & Return Loss
Gain vs. Temperature
20
15
10
20
18
16
14
12
10
8
1
5
S11
S21
0
S22
-5
-10
-15
-20
-25
6
4
2
0
+25C
+85C
-40C
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25C
+85C
+25C
+85C
-5
-5
-10
-15
-20
-40C
-40C
-10
-15
-20
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
+25C
-5
+85C
-40C
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 157
HMC324MS8G
MICROWAVE CORPORATION
HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz
FEBRUARY 2001
V00.1200
P1dB vs. Temperature
Psat vs. Temperature
24
22
20
18
16
14
12
10
8
24
22
20
18
16
14
12
10
8
+25C
+85C
-40C
+25C
+85C
-40C
1
6
6
4
4
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression @ 1 GHz
Power Compression @ 2 GHz
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
-2
-4
-6
-8
-10
-2
-4
-6
-8
-10
Pout
Gain
PAE
Pout
Gain
PAE
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
INPUT POWER (dBm)
0
2
4
6
8
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
INPUT POWER (dBm)
0
2
4
6
8
Output IP3 vs. Temperature
34
32
30
28
26
24
22
20
18
16
14
+25C
+85C
-40C
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 158
HMC324MS8G
MICROWAVE CORPORATION
HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz
FEBRUARY 2001
V00.1200
Schematic
Absolute Maximum Ratings
VS (8.75V)
RBIAS (22 Ohm)
DC Voltage on Pin 1
8 Volts
Vcc
OUT1
PIN 4
Input Power (RFin)(Vcc= +5V)
Channel Temperature (Tc)
Continuous Pdiss (Ta= 60 °C)
(derate 4.41 mW/ °C above 60 °C)
Storage Temperature
+20 dBm
175 °C
C BLOCK
C BLOCK
1
IN 1
PIN 5
507 mW
-65 to +150 °C
-55 to +60 °C
Operating Temperature
GND
(PINS 2, 3, 5, 6)
Note:
1. Select RBIAS to achieve desired Vcc voltage
on Pin 1.
2. External blocking capacitors are required on
Pins 1, 4, 5, and 8.
IN 2
PIN 8
Vcc
OUT 2
PIN 1
RBIAS (22 Ohm)
VS (8.75V)
Outline
1. MATERIAL:
UNLESS OTHERWISE SPECIFIEDALLTOL. ARE±0.005(±0.13).
4. CHARACTERSTOBEHELVETICAMEDIUM, APPROX.020HIGH
WHITEINK,LOCATEDAPPROXIMATELYASSHOWN.
A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC,
SILICA & SILICONE IMPREGNATED.
B)LEADFRAMEMATERIAL:COPPER ALLOY
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE
2. PLATING:LEAD-TINSOLDERPLATE
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 159
HMC324MS8G
MICROWAVE CORPORATION
HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz
FEBRUARY 2001
V00.1200
Evaluation PCB for HMC324MS8G
1
ThecircuitboardusedinthefinalapplicationshoulduseRFcircuitdesigntechniques. Signallinesshouldhave
50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the
ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top
and bottom ground planes. The evaluation circuit board as shown is available from Hittite upon request.
Evaluation Circuit Board Layout Design Details
Item
J1 - J4
U1
Description
PC Mount SMA Connector
HMC324MS8G
PCB*
104221 Evaluation PCB 1.5" x 1.5"
*Circuit Board Material: Rogers 4350
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 160
HMC324MS8G
MICROWAVE CORPORATION
HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz
FEBRUARY 2001
V00.1200
NOTES:
1
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 161
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HITTITE
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