HMC559_09 [HITTITE]
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20 GHz; 的GaAs PHEMT MMIC功率放大器， DC - 20 GHz的
| 型号： | HMC559_09 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20 GHz |
| 文件： | 总8页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC559
v03.0208
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
Typical Applications
Features
The HMC559 wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
P1dB Output Power: +28 dBm
Gain: 14 dB
Output IP3: +36 dBm
3
Supply Voltage: +10V @ 400 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.50 x 0.1 mm
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC559 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
20 GHz. The amplifier provides 14 dB of gain,
+36 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 400 mA
from a +10V supply. Gain flatness is slightly posi-
tive from 4 to 20 GHz making the HMC559 ideal for
EW, ECM and radar driver amplifier applications.
The HMC559 amplifier I/O’s are internally matched to
50 Ohms facilitating integration into Multi-Chip-Mod-
ules (MCMs). All data is taken with the chip connected
via two 0.075mm (3 mil) ribbon bonds of minimal length
0.31mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd= +10V, Vgg2= +4V, Idd= 400 mA*
Parameter
Frequency Range
Min.
Typ.
DC - 6
13
Max.
Min.
Typ.
6 - 12
13.5
0.5
Max.
Min.
Typ.
12 - 20
14
Max.
0.03
Units
GHz
dB
Gain
11
11
11.5
Gain Flatness
0.5
0.01
22
1.5
dB
Gain Variation Over Temperature
Input Return Loss
0.02
0.01
15
0.02
0.02
13
dB/ °C
dB
Output Return Loss
16
16
8
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
25
28
24.5
27.5
29
23
27
dBm
dBm
dBm
dB
30
28.5
33
37
36
4.5
3.5
4.5
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
400
400
400
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 62
HMC559
v03.0208
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
Gain & Return Loss
Gain vs. Temperature
20
20
15
10
5
16
S21
S11
S22
12
0
3
-5
+25C
8
-10
-15
-20
-25
-30
+85C
-55C
4
0
0
2
4
6
8
10 12 14 16 18 20 22
0
5
10
15
20
25
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25C
+85C
-55C
+25C
+85C
-55C
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
7
6
5
4
3
-10
+25C
+85C
-55C
-20
-30
-40
-50
-60
2
+25C
+85C
-55C
1
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 63
HMC559
v03.0208
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
P1dB vs. Temperature
Psat vs. Temperature
32
32
30
28
26
24
22
20
30
28
26
3
24
+25C
+85C
-55C
+25C
+85C
-55C
22
20
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
Output IP3 vs. Output Power
45
50
40
35
9.5V
45
40
35
30
10V
10.5V
30
+25C
+85C
-55C
25
20
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22 24 26
FREQUENCY (GHz)
OUTPUT POWER (dBm)
Gain, Power & Output IP3 vs.
Supply Voltage @ 10 GHz, Fixed Vgg
40
35
30
25
Gain
P1dB
Psat
IP3
20
15
10
9.5
10
10.5
Vdd Supply Voltage (V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 64
HMC559
v03.0208
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
Power Compression @ 2 GHz
Power Compression @ 10 GHz
32
32
28
28
Pout
Pout
Gain
Gain
PAE
PAE
24
24
20
16
12
8
20
16
12
8
3
4
4
0
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
INPUT POWER (dBm)
INPUT POWER (dBm)
Power Compression @ 20 GHz
Power Dissipation
32
28
24
20
16
5.5
Max Pdiss @ +85C
5
4.5
4
2 GHz
12
Pout
3.5
3
Gain
PAE
8
10 GHz
4
0
2.5
0
2
4
6
8
10
12
14
16
-5
0
5
10
15
20
25
30
INPUT POWER (dBm)
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +10 Vdc)
Channel Temperature
+11 Vdc
Vdd (V)
+9.5
Idd (mA)
399
-2 to 0 Vdc
+3V to +5V
+30 dBm
175 °C
+10
400
+10.5
401
Continuous Pdiss (T= 85 °C)
(derate 55 mW/°C above 85 °C)
5 W
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Thermal Resistance
(channel to die bottom)
18 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-55 to +85 °C
Class 1A
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 65
HMC559
v03.0208
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
Outline Drawing
3
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
Standard
Alternate
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 66
HMC559
v03.0208
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
1
IN
3
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. For nominal
operation +4V should be applied to Vgg2.
2
3
Vgg2
Low frequency termination. Attach bypass
capacitor per application circuit herein.
ACG2
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
4
5
OUT & Vdd
Vgg1
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
Low frequency termination. Attach bypass
capacitor per application circuit herein.
6
ACG1
GND
Die Bottom
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 67
HMC559
v03.0208
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
Assembly Diagram
3
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 500mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 68
HMC559
v03.0208
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
0.102mm (0.004”) Thick GaAs MMIC
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Ribbon Bond
0.076mm
(0.003”)
3
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Ribbon Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
0.150mm (0.005”) Thick
Moly Tab
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
0.254mm (0.010” Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 69
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