UMF21N [HTSEMI]
Power management (dual transistors); 电源管理（双晶体管）
| 型号： | UMF21N |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | Power management (dual transistors) |
| 文件： | 总2页 (文件大小：596K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UMF21N
Power management (dual transistors)
DESCRIPTION
Silicon epitaxial planar transistor
SOT-363
FEATURES
z
2SA2018 and DTC114E are housed independently
in a package.
z
z
Power switching circuit in a single package.
Mounting cost and area can be cut in half.
1
APPLICATION
Power management circuit, mobile telephone quiver circuit
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent Circuit
MARKING:F21
F21
(3)
(2) (1)
DTr2
Tr1
R1
R2
(4)
(5)
(6)
TR1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted
Symbol Parameter
VCBO
Collector- Base Voltage
Value
Units
V
-15
-12
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
V
-6
V
-0.5
A
PC
0.15
150
W
℃
℃
TJ
Junction Temperature
Storage Temperature
Tstg
-55-150
DTR2 Absolute maximum ratings(Ta=25 )
℃
Parameter
Supply voltage
Input voltage
Symbol
VCC
VIN
Limits
Unit
V
50
-10~40
50
V
IO
Output current
mA
IC(MAX)
Pd
100
Power dissipation
Junction temperature
Storage temperature
150
mW
℃
℃
Tj
150
Tstg
-55~150
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
EMF23
TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-15
-12
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-10μA, IE=0
IC=-1mA, IB=0
IE=-10μA, IC=0
V
V
VCB= -15 V, IE=0
-0.1
-0.1
μA
μA
Emitter cut-off current
IEBO
VEB=- 6V, IC=0
DC current gain
hFE
VCE=-2V, IC=-10mA
IC=-200mA,IB=-10mA
VCE=-2V,IC=-10mA, f=100MHz
VCB=-10V,IE=0,f=1MHz
270
680
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
-0.25
V
260
6.5
MHz
pF
fT
Collector output capacitance
Cob
DTR2 Electrical characteristics (Ta=25 )
℃
Min.
Typ
Max.
Unit
Conditions
VCC=5V ,IO=100μA
VO=0.3V ,IO=10 mA
IO/II=10mA/0.5mA
VI=5V
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
0.5
Input voltage
V
3
Output voltage
Input current
0.3
0.88
0.5
V
mA
μA
Output current
IO(off)
GI
VCC=50V, VI=0
VO=5V ,IO=5mA
DC current gain
Input resistance
Resistance ratio
Transition frequency
30
7
R1
10
1
13
KΩ
R2/R1
fT
0.8
1.2
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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