首页 |元器件品牌

BUP305 [INFINEON]

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode); IGBT用反并联二极管（低正向压降高开关速度低尾电流闭锁免费包括快速续流二极管）
BUP305
型号： BUP305
厂家： Infineon    Infineon
描述：

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
IGBT用反并联二极管（低正向压降高开关速度低尾电流闭锁免费包括快速续流二极管）

二极管 开关 双极性晶体管
文件： 总7页 (文件大小：387K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BUP 305 D  
IGBT With Antiparallel Diode  
Preliminary data  
• Low forward voltage drop  
• High switching speed  
• Low tail current  
• Latch-up free  
• Including fast free-wheel diode  
Pin 1  
Pin 2  
Pin 3  
G
C
E
Type  
V
I
Package  
Ordering Code  
Q67040-A4225-A2  
CE  
C
BUP 305 D  
1200V 12A  
TO-218 AB  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-gate voltage  
V
1200  
V
CE  
V
CGR  
Ω
R
= 20 k  
1200  
± 20  
GE  
Gate-emitter voltage  
DC collector current  
V
GE  
I
A
C
T = 25 °C  
12  
8
C
T = 90 °C  
C
Pulsed collector current, t = 1 ms  
I
p
Cpuls  
T = 25 °C  
24  
16  
C
T = 90 °C  
C
Diode forward current  
I
I
F
T = 90 °C  
8
C
Pulsed diode current, t = 1 ms  
p
Fpuls  
T = 25 °C  
48  
C
Power dissipation  
P
W
tot  
T = 25 °C  
100  
C
Chip or operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
Semiconductor Group  
1
Dec-02-1996  
BUP 305 D  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
-
-
E
-
55 / 150 / 56  
Thermal Resistance  
Thermal resistance, chip case  
Diode thermal resistance, chip case  
R
R
1
K/W  
thJC  
3.1  
thJCD  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
Static Characteristics  
Gate threshold voltage  
V
V
V
GE(th)  
V
= V  
I = 0.3 mA, T = 25 °C  
4.5  
5.5  
6.5  
GE  
CE, C  
j
Collector-emitter saturation voltage  
CE(sat)  
V
= 15 V, I = 5 A, T = 25 °C  
-
-
2.8  
3.8  
3.3  
4.3  
GE  
GE  
C
j
V
= 15 V, I = 5 A, T = 125 °C  
C
j
Zero gate voltage collector current  
= 1200 V, V = 0 V, T = 25 °C  
I
I
mA  
nA  
CES  
GES  
V
-
-
-
-
0.35  
100  
CE  
GE  
j
Gate-emitter leakage current  
= 20 V, V = 0 V  
V
GE  
CE  
AC Characteristics  
Transconductance  
g
S
fs  
V
= 20 V, I = 5 A  
1.7  
2.5  
650  
50  
-
CE  
C
Input capacitance  
= 25 V, V = 0 V, f = 1 MHz  
C
C
C
pF  
iss  
V
-
-
-
800  
80  
30  
CE  
GE  
Output capacitance  
= 25 V, V = 0 V, f = 1 MHz  
oss  
rss  
V
CE  
GE  
Reverse transfer capacitance  
= 25 V, V = 0 V, f = 1 MHz  
V
20  
CE  
GE  
Semiconductor Group  
2
Dec-02-1996  
BUP 305 D  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
Switching Characteristics, Inductive Load at T = 125 °C  
max.  
j
Turn-on delay time  
= 600 V, V = 15 V, I = 5 A  
t
t
t
t
ns  
nS  
ns  
d(on)  
V
CC  
GE  
C
R
= 68 Ω  
-
-
-
-
-
30  
50  
30  
270  
25  
-
Gon  
Rise time  
= 600 V, V = 15 V, I = 5 A  
r
V
CC  
GE  
C
R
= 68 Ω  
20  
Gon  
Turn-off delay time  
= 600 V, V = -15 V, I = 5 A  
d(off)  
V
CC  
GE  
C
Ω
R
= 68  
180  
15  
Goff  
Fall time  
= 600 V, V = -15 V, I = 5 A  
f
V
CC  
GE  
C
Ω
= 68  
R
Goff  
Total turn-off loss energy  
= 600 V, V = -15 V, I = 5 A  
E
mWs  
off  
V
CC  
GE  
C
Ω
R
= 68 , T = 25 °C  
0.7  
Goff  
j
Free-Wheel Diode  
Diode forward voltage  
V
V
F
I = 4 A, V = 0 V, T = 25 °C  
-
-
2.3  
1.9  
3
-
F
GE  
j
I = 4 A, V = 0 V, T = 125 °C  
F
GE  
j
Reverse recovery time  
I = 4 A, V = -300 V, V = 0 V  
t
ns  
rr  
F
R
GE  
di /dt = -800 A/µs  
F
T = 25 °C  
-
-
-
-
j
T = 125 °C  
60  
100  
j
Reverse recovery charge  
I = 4 A, V = -300 V, V = 0 V  
Q
µC  
rr  
F
R
GE  
di /dt = -800 A/µs  
F
T = 25 °C  
-
-
-
-
j
T = 125 °C  
1
1.8  
j
Semiconductor Group  
3
Dec-02-1996  
BUP 305 D  
Power dissipation  
Collector current  
ƒ
ƒ
I = (T )  
C C  
P
= (T )  
tot  
C
≤
≥
≤
j
parameter: T 150 °C  
parameter: V  
15 V , T 150 °C  
j
GE  
12  
A
110  
W
10  
90  
Ptot  
IC  
9
80  
70  
60  
50  
40  
30  
20  
8
7
6
5
4
3
2
10  
0
1
0
0
20  
40  
60  
80 100 120  
°C 160  
TC  
0
20  
40  
60  
80 100 120  
°C 160  
TC  
Safe operating area  
Transient thermal impedance IGBT  
ƒ
ƒ
I = (V  
)
Z
= (t )  
th JC  
C
CE  
p
≤
parameter: D = 0, T = 25°C , T 150 °C  
parameter: D = t / T  
C
j
p
10 2  
10 1  
A
K/W  
t
= 25.0µs  
100 µs  
p
IC  
ZthJC  
10 1  
10 0  
10 0  
10 -1  
1 ms  
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.01  
10 ms  
10 -1  
10 -2  
DC  
single pulse  
10 -2  
10 0  
10 -3  
10 1  
10 2  
10 3  
V
10 -5  
10 -4  
10 -3  
10 -2  
10 -1 s 10 0  
tp  
VCE  
Semiconductor Group  
4
Dec-02-1996  
BUP 305 D  
Typ. output characteristics  
I = f(V  
Typ. transfer characteristics  
I = f (V  
)
CE  
)
GE  
C
C
parameter: t = 80 µs, T = 125 °C  
parameter: t = 80 µs, V = 20 V, T = 25 °C  
P CE j  
p
j
Typ. saturation characteristics  
= f (V  
Typ. saturation characteristics  
VCE(sat) = f (V )  
V
)
CE(sat)  
GE  
GE  
parameter: T = 25 °C  
parameter: T = 125 °C  
j
j
Semiconductor Group  
5
Dec-02-1996  
BUP 305 D  
Typ. capacitances  
C = f (V  
Typ. gate charge  
ƒ
)
V
= (Q  
)
CE  
GE  
Gate  
parameter: I  
= 6 A  
parameter: V = 0 V, f = 1 MHz  
C puls  
GE  
20  
V
16  
VGE  
400 V  
800 V  
14  
12  
10  
8
6
4
2
0
0
10  
20  
30  
40  
50  
nC  
65  
QGate  
Short circuit safe operating area  
= f (V ) , T = 150°C  
Reverse biased safe operating area  
I = f (V ) , T = 150°C  
Cpuls  
I
Csc  
CE  
j
CE  
j
parameter: VGE = ± 15 V, tsc 10 µs, L < 25 nH  
parameter: VGE = 15 V  
≤
10  
2.5  
ICsc/IC(90°C)  
ICpuls/IC  
6
1.5  
1.0  
4
2
0
0.5  
0.0  
0
200 400 600 800 1000 1200  
V
1600  
0
200 400 600 800 1000 1200  
V
1600  
Semiconductor Group  
6
Dec-02-1996  
BUP 305 D  
Typ. switching time  
t = f (R ), inductive load, T = 125 °C  
G
j
parameter: V  
= 600 V, V  
= ± 15 V, I = 5 A  
GE C  
CE  
Typ. forward characteristics  
I = f (V )  
Transient thermal impedance Diode  
ƒ
= (t )  
p
Z
F
F
th JC  
parameter: D = t / T  
parameter: T  
p
j
10 1  
10  
A
K/W  
8
IF  
ZthJC  
7
6
5
4
3
2
1
10 0  
Tj=125°C  
Tj=25°C  
D = 0.50  
0.20  
10 -1  
0.10  
0.05  
0.02  
single pulse  
0.01  
0
10 -2  
10 -5  
0.0  
0.5  
1.0  
1.5  
2.0  
V
3.0  
10 -4  
10 -3  
10 -2  
10 -1 s 10 0  
tp  
VF  
Semiconductor Group  
7
Dec-02-1996  

相关型号：

BUP305D

 IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
INFINEON

BUP306D

 IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
INFINEON

BUP307

 IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
INFINEON

BUP307D

 IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
INFINEON

BUP309

 IGBT (High switching speed Low tail current Latch-up free Avalanche rated)
INFINEON

BUP31

 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-220AB
ETC

BUP311D

 IGBT With Antiparallel Diode Preliminary data sheet
INFINEON

BUP313

 IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
INFINEON

BUP313D

 IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
INFINEON

BUP313DQ67040-A4228-A2

 TRANSISTOR DUOPACK IGBT
INFINEON

BUP314

 IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
INFINEON

BUP314D

 IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
INFINEON
©2020 ICPDF网 联系我们和版权申明