IGC10R60DEX1SA2 [INFINEON]

Insulated Gate Bipolar Transistor;


型号：	IGC10R60DEX1SA2
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor 栅
文件：	总6页 (文件大小：96K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IGC10R60DE

TRENCHSTOP^TMRC-Series for hard switching applications

IGBT chip with monolithically integrated diode in packages offering space saving advantage

Features:

TRENCHSTOP^TMReverse Conducting (RC) technology for

600V applications offering:

• Optimised V_CEsatand V_Ffor low conduction losses

• Smooth switching performance leading to low EMI levels

• Very tight parameter distribution

• Operating range of 1 to 20kHz

• Maximum junction temperature 175°C

• Short circuit capability of 5μs

• Best in class current versus package size performance

• Qualified according to JEDEC for target applications

• Complete product spectrum and PSpice Models:

http://www.infineon.com/igbt/

Applications:

Used for:

Motor drives

Discrete components and molded modules

Chip Type

V_CE

I_Cn

Die Size

Package

IGC10R60DE

600V 15A

2.70 x 3.73 mm²

sawn on foil

Mechanical Parameters

Raster size

2.70 x 3.73

Emitter pad size

Gate pad size

see chip drawing

10.071 / 5.544 / 1.317

mm²

Area: total / active IGBT / active Diode

Thickness

µm

Wafer size

200

Max.possible chips per wafer

Passivation frontside

Pad metal

2759

Photoimide

3200 nm AlSiCu

Ni Ag –system

Backside metal

Electrically conductive epoxy glue and soft solder

(temperature budget: 290°C for 1min. or 260°C for 1.5min.)

Die bond

Wire bond

Al, <350µm

Reject ink dot size

 0.65mm ; max 1.2mm

for original and

sealed MBB bags

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

Storage environment

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,

Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

for open MBB bags

Edited by INFINEON Technologies, IFAG IMM PSD D, L7386B, Edition 1.1, 31.05.2013

IGC10R60DE

TRENCHSTOP^TMRC-Series for hard switching applications

Maximum Ratings

Parameter

Symbol

V_{C E}

Value

Unit

600

Collector-Emitter voltage, T_vj=25 C

DC collector current, limited by T_{vj max}

Pulsed collector current, t_plimited by T_{vj max}

Gate emitter voltage

1 )

I_C

I_{c, p ul s}

V_{G E}

20

Junction temperature range

T_{vj , ma x}

T_{vj, op , ma x}

t_SC

-40 ...+175

°C

C

µs

Operating junction temperature

Short circuit data ^{2 )}V_GE= 15V, V_CC= 400V, T_vj= 150°C

Safe operating area IGBT ^{2 )3)}

Safe operating area Diode ^{2 )}

I_{C, ma x}= 30A, V_{CE, ma x}= 600V, T_vj,op T_vj,op,max

I_{F, ma x}= 30A, V_{R, m a x}= 600V,

P_{m a x}=12 kW , T_vj,op T_vj,op,max

^{1 )}depending on thermal properties of assembly

^{2 )}not subject to production test - verified by design/characterization

^{3 )}allowed number of short circuits: <1000; time between short circuits: >1s

Static Characteristics (tested on wafer), T_vj=25 C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Collector-Emitter breakdown voltage

Collector-Emitter saturation voltage

Diode Forward Voltage

V_(BR)CES

V_CEsat

V_F

V_GE=0V , I_C= 0.2 mA

V_GE=15V, I_C=15A

V_GE=0V, I_F=15A

600

1.65

1.7

2.1

5.7

Gate-Emitter threshold voltage

Zero gate voltage collector current

Gate-Emitter leakage current

Integrated gate resistor

V_GE(th)

I_CES

I_C=0.25mA , V_GE=V_CE

V_CE=600V , V_GE=0V

V_CE=0V , V_GE=20V

4.3

µA



I_GES

100

r_G

none

Electrical Characteristics (not subject to production test - verified by design / characterization)

Value

Parameter

Symbol

Conditions

Unit

min. typ.

max.

Collector-Emitter saturation

voltage

V_CEsat

V_GE=15V, I_C=15A

1.85

T_vj=175 C

Input capacitance

C_{i es}

C_{oe s}

C_{re s}

V_{C E}=25V,

V_{G E}=0V, f=1MHz

T_vj=25 C

961

Output capacitance

Reverse transfer capacitance

Edited by INFINEON Technologies, IFAG IMM PSD D, L7386B, Edition 1.1, 31.05.2013

IGC10R60DE

TRENCHSTOP^TMRC-Series for hard switching applications

Further Electrical Characteristic

Switching characteristics and thermal properties are depending strongly on package design and mounting

technology and can therefore not be specified for a bare die.

Further technical information about the performance of this chip in package PG-TO252-3 is given

exemplarily at www.infineon.com/igbt. The chip qualification is independent of the qualification which is

performed for the Discretes.

This chip data sheet refers to the device data sheet

IKD15N60R

Rev. 2.2

Edited by INFINEON Technologies, IFAG IMM PSD D, L7386B, Edition 1.1, 31.05.2013

IGC10R60DE

TRENCHSTOP^TMRC-Series for hard switching applications

Chip Drawing

E = Emitter

G = Gate

Edited by INFINEON Technologies, IFAG IMM PSD D, L7386B, Edition 1.1, 31.05.2013

IGC10R60DE

TRENCHSTOP^TMRC-Series for hard switching applications

Chip Drawing active areas

Edited by INFINEON Technologies, IFAG IMM PSD D, L7386B, Edition 1.1, 31.05.2013

IGC10R60DE

TRENCHSTOP^TMRC-Series for hard switching applications

Description

AQL 0,65 for visual inspection according to failure catalogue

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Revision History

Version

Subjects (major changes since last revision)

Date

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the

types in question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted in the

human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable

to assume that the health of the user or other persons may be endangered.

Edited by INFINEON Technologies, IFAG IMM PSD D, L7386B, Edition 1.1, 31.05.2013

IGC10R60DEX1SA2 [INFINEON]

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