IHW30N90R [INFINEON]

Reverse Conducting IGBT with monolithic body diode; 逆导IGBT与单片体二极管


型号：	IHW30N90R
厂家：	Infineon
描述：	Reverse Conducting IGBT with monolithic body diode 逆导IGBT与单片体二极管二极管双极性晶体管
文件：	总12页 (文件大小：356K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IHW30N90R

Soft Switching Series

Reverse Conducting IGBT with monolithic body diode

Features:

•

1.5V typical saturation voltage of IGBT

Trench and Fieldstop technology for 900 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- easy parallel switching capability due to positive

temperature coefficient in V_CE(sat)

•

Low EMI

Qualified according to JEDEC¹for target applications

Application specific optimisation of inverse diode

Pb-free lead plating; RoHS compliant

PG-TO-247-3-21

Applications:

•

Microwave Oven

Soft Switching Applications for ZCS

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Marking

Package

IHW30N90R

900V

30A

1.5V

H30R90

PG-TO-247-3-21

175°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

V_CE

I_C

900

T_C= 25°C

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area V_CE≤ 1200V, T_j≤ 150°C

Diode forward current

I_{Cpul s}

I_F

T_C= 25°C

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

I_{Fpul s}

V_{G E}

±20

Transient Gate-emitter voltage (t_p< 5 ms)

±25

P_{t ot}

T_j

T_stg

454

Power dissipation, T_C= 25°C

Operating junction temperature

Storage temperature

-40...+175

-55...+175

260

°C

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

¹J-STD-020 and JESD-022

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

R_{t hJC}

R_{t hJCD}

R_{t hJA}

0.33

K/W

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR)CES}

_{G E}=0V, I_C=0.5mA

900

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=30A

T_j=25°C

1.5

1.6

1.7

T_j=150°C

T_j=175°C

Diode forward voltage

V_F

V_{G E}=0V, I_F=30A

1.4

1.45

1.6

T_j=25°C

T_j=150°C

T_j=175°C

Gate-emitter threshold voltage

Zero gate voltage collector current

V_{G E(t h)}

I_CES

5.1

5.8

6.4

I_C=700µA,V_CE=V_GE

_CE=900V,

µA

_{G E}=0V

T_j=25°C

T_j=150°C

2500

600

Gate-emitter leakage current

I_GES

_CE=0V,V_{G E}=20V

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

C_oss

C_rss

_CE=25V,

_{G E}=0V,

2889

f=1MHz

Q_Gate

_CC=720V, I_C=30A

_{G E}=15V

200

Internal emitter inductance

L_E

measured 5mm (0.197 in.) from case

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

Max.

IGBT Characteristic

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_d(off)

t_f

E_on

E_off

E_{t s}

511

1.46

T_j=25°C

_CC=600V,

I_C=30A,

_{G E}=0/15V,

R_G= 15Ω

Switching Characteristic, Inductive Load, at T_j=175 °C

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_d(off)

t_f

E_on

E_off

E_{t s}

594

2.1

T_j=175°C

_CC=600V,

I_C=30A,

_{G E}=0/15V,

R_G= 15Ω

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

t_p=1µs

10µs

20µs

50µs

80A

60A

40A

20A

T_C=80°C

10A

T_C=110°C

200µs

1ms

I_c

100Hz

1kHz

10kHz

100kHz

10V

100V

1000V

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency for triangular

current (E_on= 0, hard turn-off)

Figure 2. IGBT Safe operating area

(D = 0, T_C= 25°C,

T_j≤175°C;V_GE=15V)

(T_j≤ 175°C, D = 0.5, V_CE= 600V,

V_GE= 0/+15V, R_G= 15Ω)

400W

350W

300W

250W

200W

150W

100W

50W

50A

40A

30A

20A

10A

25°C

75°C

125°C

25°C

50°C

75°C 100°C 125°C 150°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

Figure 4. Collector current as a function of

case temperature

(T_j≤ 175°C)

(V_GE≥ 15V, T_j≤ 175°C)

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

80A

70A

60A

50A

40A

30A

20A

10A

80A

70A

60A

50A

40A

30A

20A

10A

_GE=20V

15V

_GE=20V

15V

13V

11V

13V

11V

0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 175°C)

I_C=60A

60A

50A

40A

30A

2.0V

1.5V

1.0V

0.5V

0.0V

I_C=30A

I_C=15A

T_J=175°C

20A

10A

25°C

50°C

100°C

150°C

_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=20V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

1000ns

t_d(off)

100ns

t_f

100ns

t_f

10ns

50A

10A

20A

30A

40A

20Ω

30Ω

40Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=175°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_J=175°C,

V_CE=600V, V_GE=0/15V, R_G=15Ω,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=30A,

Dynamic test circuit in Figure E)

1000ns

t_d(off)

max.

typ.

100ns

t_f

min.

25°C

50°C

75°C

100°C 125°C 150°C

-50°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V_CE=600V,

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 0.7mA)

V_GE=0/15V, I_C=30A, R_G=15Ω,

Dynamic test circuit in Figure E)

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

4.0mJ

3.0mJ

2.0mJ

1.0mJ

0.0mJ

3.0mJ

2.0mJ

1.0mJ

0.0mJ

E_off

20Ω

30Ω

40Ω

10A

20A

30A

40A

50A

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_J=175°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J=175°C,

V_CE=600V, V_GE=0/15V, R_G=15Ω,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=30A,

Dynamic test circuit in Figure E)

E_off

2.0mJ

1.5mJ

1.0mJ

0.5mJ

0.0mJ

25°C 50°C 75°C 100°C 125°C 150°C

T_J, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, V_CE=600V,

V_GE=0/15V, I_C=30A, R_G=15Ω,

Dynamic test circuit in Figure E)

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

C_iss

1nF

100pF

10pF

180V

10V

720V

C_oss

C_rss

0nC

50nC

100nC 150nC 200nC 250nC

10V

20V

Q_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical gate charge

Figure 17. Typical capacitance as a function

(I_C=30 A)

of collector-emitter voltage

(V_GE=0V, f = 1 MHz)

D=0.5

10^-1K/W

0.2

10^-1K/W

0.2

R , ( K / W )

τ , ( s )

1.10*10^-1

1.43*10^-2

8.67*10^-4

1.09*10^-4

R₂

0.1

R , ( K / W )

0.0842

τ , ( s )

6.67*10^-2

9.59*10^-3

7.33*10^-4

8.56*10^-5

R₂

0.0395

0.1559

0.1075

0.0275

0.05

0.02

0.01

single pulse

0.1202

0.05

0.02

0.01

0.0877

0.0385

R₁

10^-2K/W

C₁=τ₁/R₁C₂=τ₂/R₂

single pulse

C₁=τ₁/R₁C₂=τ₂/R₂

10µs

100µs

1ms

10ms

100ms

10µs

100µs

1ms

10ms

100ms

t_P, PULSE WIDTH

Figure 18. IGBT transient thermal

resistance

t_P, PULSE WIDTH

Figure 19. Typical Diode transient thermal

impedance as a function of pulse width

(D=t_P/T)

(D = t_p/ T)

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

I_F=60A

50A

40A

30A

20A

10A

2.0V

1.5V

1.0V

0.5V

30A

15A

T_J=25°C

175°C

0.0V

0.5V

1.0V

1.5V

2.0V

50°C

100°C

150°C

V_F, FORWARD VOLTAGE

Figure 20. Typical diode forward current as

a function of forward voltage

T_J, JUNCTION TEMPERATURE

Figure 21. Typical diode forward voltage

as a function of junction temperature

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

PG-TO247-3-21

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

i,v

t_{r r}=t_S+t_F

di_F/dt

Q_{r r}=Q_S+Q_F

t_{r r}

I_F

t_S

t_F

Q_S

10% I_{r r m}

Q_F

I_{r r m}

di_{r r}/dt

V_R

90% I_{r r m}

Figure C. Definition of diodes

switching characteristics

τ₁

τ₂

r ₂

τ_n

r₁

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R

Soft Switching Series

Edition 2006-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device, Infineon Technologies

hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types

in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or

system. Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Rev. 2.0 July 06

Power Semiconductors

IHW30N90R [INFINEON]

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