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IHW40N120R3FKSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel,;
IHW40N120R3FKSA1
型号： IHW40N120R3FKSA1
厂家： Infineon    Infineon
描述：

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel,

栅
文件： 总15页 (文件大小：2176K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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InductionꢀHeatingꢀSeries  
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode  
IHW40N120R3  
Datasheet  
IndustrialꢀPowerꢀControl  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode  
ꢀ
C
Features:  
•ꢀPowerfulꢀmonolithicꢀbodyꢀdiodeꢀwithꢀlowꢀforwardꢀvoltageꢀ  
ꢀꢀdesignedꢀforꢀsoftꢀcommutationꢀonly  
•ꢀTRENCHSTOPTMꢀtechnologyꢀoffering:  
ꢀꢀ-ꢀveryꢀtightꢀparameterꢀdistribution  
ꢀꢀ-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior  
ꢀꢀ-ꢀlowꢀVCEsat  
G
E
ꢀꢀ-ꢀeasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositiveꢀ  
ꢀꢀꢀꢀtemperatureꢀcoefficientꢀinꢀVCEsat  
•ꢀLowꢀEMI  
•ꢀQualifiedꢀaccordingꢀtoꢀJESD-022ꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogenꢀfreeꢀ(accordingꢀtoꢀIECꢀ61249-2-21)  
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:ꢀ  
ꢀꢀhttp://www.infineon.com/igbt/  
G
Applications:  
C
E
•ꢀInductiveꢀcookingꢀ  
Packageꢀpinꢀdefinition:  
•ꢀPinꢀ1ꢀ-ꢀgate  
•ꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector  
•ꢀPinꢀ3ꢀ-ꢀemitter  
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.55V 175°C  
Marking  
Package  
IHW40N120R3  
1200V  
40A  
H40R1203  
PG-TO247-3  
2
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
3
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
Maximumꢀratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
VCE  
1200  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°C  
TCꢀ=ꢀ100°C  
IC  
80.0  
40.0  
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
120.0  
120.0  
A
A
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ1200V,ꢀTvjꢀ≤ꢀ175°C  
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°C  
TCꢀ=ꢀ100°C  
IF  
80.0  
40.0  
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
120.0  
A
V
Gate-emitter voltage  
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)  
±20  
±25  
PowerꢀdissipationꢀTCꢀ=ꢀ25°C  
PowerꢀdissipationꢀTCꢀ=ꢀ100°C  
429.0  
215.0  
Ptot  
W
Operating junction temperature  
Storage temperature  
Tvj  
-40...+175  
-55...+175  
°C  
°C  
Tstg  
Soldering temperature,  
wave soldering 1.6 mm (0.063 in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
ThermalꢀResistance  
Parameter  
Symbol Conditions  
Max.ꢀValue  
Unit  
Characteristic  
IGBT thermal resistance,  
junction - case  
Rth(j-c)  
Rth(j-c)  
Rth(j-a)  
0.35  
0.35  
40  
K/W  
K/W  
K/W  
Diode thermal resistance,  
junction - case  
Thermal resistance  
junction - ambient  
4
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Unit  
min. typ. max.  
Parameter  
Symbol Conditions  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A  
Tvjꢀ=ꢀ25°C  
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ125°C  
1200  
-
-
V
V
-
-
-
1.55 1.75  
1.80  
1.90  
-
-
Tvjꢀ=ꢀ175°C  
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ40.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ125°C  
Tvjꢀ=ꢀ175°C  
-
-
-
1.60 1.80  
Diode forward voltage  
VF  
V
V
1.70  
1.80  
-
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ1.00mA,ꢀVCEꢀ=ꢀVGE  
5.1  
5.8  
6.4  
VCEꢀ=ꢀ1200V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
-
100.0 µA  
2500.0  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A  
-
-
-
100  
-
nA  
S
35.3  
none  
Integrated gate resistor  
rG  
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
2708  
87  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
76  
VCCꢀ=ꢀ960V,ꢀICꢀ=ꢀ40.0A,ꢀ  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
LE  
-
-
335.0  
13.0  
-
-
nC  
nH  
Internal emitter inductance  
measured 5mm (0.197 in.) from  
case  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-off delay time  
Fall time  
td(off)  
tf  
-
-
-
336  
38  
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ40.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
rGꢀ=ꢀ7.5Ω,ꢀLσꢀ=ꢀ220nH,  
Cσꢀ=ꢀ40pF  
Turn-off energy  
Eoff  
2.02  
mJ  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off energy, soft switching  
Eoff  
dv/dtꢀ=ꢀ150.0V/µs  
-
0.48  
-
mJ  
5
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Unit  
min. typ. max.  
Parameter  
Symbol Conditions  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C  
Turn-off delay time  
Fall time  
td(off)  
tf  
-
-
-
410  
96  
-
-
-
ns  
ns  
Tvjꢀ=ꢀ175°C,  
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ40.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
rGꢀ=ꢀ7.5Ω,ꢀLσꢀ=ꢀ220nH,  
Cσꢀ=ꢀ40pF  
Turn-off energy  
Eoff  
3.93  
mJ  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off energy, soft switching  
Eoff  
dv/dtꢀ=ꢀ150.0V/µs  
-
0.78  
-
mJ  
6
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
450  
400  
350  
300  
250  
200  
150  
100  
50  
100  
10  
1
tp=1µs  
5µs  
10µs  
50µs  
1ms  
10ms  
DC  
0.1  
0
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
175  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea  
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V)  
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
(Tvj≤175°C)  
80  
70  
60  
50  
40  
30  
20  
10  
0
120  
110  
VGE=20V  
100  
17V  
90  
15V  
80  
70  
60  
50  
40  
30  
20  
10  
0
13V  
11V  
9V  
7V  
5V  
25  
50  
75  
100  
125  
150  
175  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
Figure 4. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
(VGE≥15V,ꢀTvj≤175°C)  
7
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
120  
Tj=25°C  
Tj=175°C  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE=20V  
17V  
15V  
13V  
11V  
9V  
7V  
5V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4
5
6
7
8
9
10  
11  
12  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Figure 5. Typicalꢀoutputꢀcharacteristic  
(Tvj=175°C)  
Figure 6. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
3.0  
IC=20A  
IC=40A  
IC=80A  
td(off)  
tf  
1000  
100  
10  
2.5  
2.0  
1.5  
1.0  
0
25  
50  
75  
100  
125  
150  
175  
0
10  
20  
30  
40  
50  
60  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
collectorꢀcurrent  
(VGE=15V)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=15/0V,ꢀrG=7,5Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
8
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
1000  
td(off)  
tf  
td(off)  
tf  
1000  
100  
10  
100  
10  
0
10  
20  
30  
40  
50  
25  
50  
75  
100  
125  
150  
175  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
resistor  
junctionꢀtemperature  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=15/0V,ꢀIC=40A,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=15/0V,  
IC=40A,ꢀrG=7,5Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
8
7
6
5
4
3
2
7
6
5
4
3
2
1
0
typ.  
min.  
max.  
Eoff  
0
25  
50  
75  
100  
125  
150  
175  
0
10  
20  
30  
40  
50  
60  
70  
80  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
ofꢀjunctionꢀtemperature  
(IC=1mA)  
functionꢀofꢀcollectorꢀcurrent  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=15/0V,ꢀrG=7,5Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
9
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
6
5
4
3
2
4.0  
3.5  
Eoff  
Eoff  
3.0  
2.5  
2.0  
1.5  
1.0  
0
10  
20  
30  
40  
50  
25  
50  
75  
100  
125  
150  
175  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistor  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=15/0V,  
IC=40A,ꢀrG=7,5Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=15/0V,ꢀIC=40A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
7
6
3.0  
Tj=25°C  
Tj=175°C  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Eoff  
5
4
3
2
1
0
400 500 600 700 800 900 1000 1100 1200  
100  
1000  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
dv/dt,ꢀVOLTAGEꢀSLOPEꢀ[V/µs]  
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=15/0V,  
IC=40A,ꢀrG=7,5Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
Figure 16. Typicalꢀturnꢀoffꢀswitchingꢀenergyꢀlossꢀfor  
softꢀswitching  
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=15/0V,  
IC=40A,ꢀrG=7,5Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
10  
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
16  
14  
12  
10  
8
1E+4  
240V  
960V  
Ciss  
Coss  
Crss  
1000  
100  
10  
6
4
2
0
0
50  
100 150 200 250 300 350 400  
0
5
10  
15  
20  
25  
30  
QGE,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 17. Typicalꢀgateꢀcharge  
(IC=40A)  
Figure 18. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
1
1
D=0.5  
0.2  
D=0.5  
0.2  
0.1  
0.1  
0.1  
0.1  
0.05  
0.05  
0.02  
0.02  
0.01  
0.01  
single pulse  
single pulse  
0.01  
0.01  
i:  
1
2
3
4
5
i:  
1
2
3
4
5
ri[K/W]: 0.060632 0.080405 0.18889  
0.015093 2.0E-3  
0.01389068 0.1188353 1.860864  
ri[K/W]: 0.060632 0.080405 0.18889  
0.015093 2.0E-3  
0.01389068 0.1188353 1.860864  
τi[s]:  
2.9E-4  
2.2E-3  
τi[s]:  
2.9E-4  
2.2E-3  
0.001  
1E-6  
0.001  
1E-5  
1E-4  
0.001  
0.01  
0.1  
1
1E-6  
1E-5  
1E-4  
0.001  
0.01  
0.1  
1
tp,ꢀPULSEꢀWIDTHꢀ[s]  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 19. IGBTꢀtransientꢀthermalꢀresistance  
(D=tp/T)  
Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
functionꢀofꢀpulseꢀwidth  
(D=tp/T)  
11  
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
Tj=25°C  
Tj=175°C  
IF=20A  
IF=40A  
IF=80A  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
25  
50  
75  
100  
125  
150  
175  
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 21. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 22. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  
12  
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
PG-TO247-3  
13  
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
a
b
a
b
t
14  
Rev.ꢀ2.1,ꢀꢀ2012-10-12  
IHW40N120R3  
InductionꢀHeatingꢀSeries  
RevisionꢀHistory  
IHW40N120R3  
Revision:ꢀ2012-10-12,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.1 2012-10-12 Final data sheet  
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and/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbe  
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15  
Rev.ꢀ2.1,ꢀꢀ2012-10-12  

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