IHW40N120R5XKSA1 [INFINEON]
Insulated Gate Bipolar Transistor,;型号: | IHW40N120R5XKSA1 |
厂家: | Infineon |
描述: | Insulated Gate Bipolar Transistor, 栅 |
文件: | 总15页 (文件大小:1770K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IHW40N120R5
ResonantꢀSwitchingꢀSeries
ReverseꢀConductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode
ꢀ
C
E
Features:
•ꢀPowerfulꢀmonolithicꢀbodyꢀdiodeꢀwithꢀlowꢀforwardꢀvoltage
designedꢀforꢀsoftꢀcommutation
•ꢀTRENCHSTOPTMꢀtechnologyꢀoffering:
-ꢀveryꢀtightꢀparameterꢀdistribution
G
-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior
-ꢀlowꢀVCEsat
-ꢀeasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositive
temperatureꢀcoefficientꢀinꢀVCEsat
•ꢀLowꢀEMI
•ꢀQualifiedꢀaccordingꢀtoꢀJESD-022ꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogenꢀfreeꢀ(accordingꢀtoꢀIECꢀ61249-2-21)
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀInductionꢀcooking
•ꢀMicrowaveꢀovens
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.55V 175°C
Marking
Package
PG-TO247-3
IHW40N120R5
1200V
40A
H40MR5
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Datasheet
2
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
1200
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IC
80.0
40.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
Non repetitive peak collector current1)
ICpuls
ICSM
120.0
200
A
A
Turn off safe operating area
VCEꢀ≤ꢀ1200V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
120.0
A
A
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IF
80.0
40.0
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
120.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±25
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
394.0
197.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.38 K/W
0.38 K/W
40 K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
1) capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs
Datasheet
3
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2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
1200
-
-
V
V
-
-
-
1.55 1.85
1.80
1.90
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ40.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.90 2.10
Diode forward voltage
VF
V
2.20
2.30
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ1.00mA,ꢀVCEꢀ=ꢀVGE
5.1
5.8
6.4
V
VCEꢀ=ꢀ1200V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
100
-
µA
800
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A
-
-
-
100
-
nA
S
30.0
none
Integrated gate resistor
rG
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
2370
70
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
60
VCCꢀ=ꢀ960V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
310.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-off delay time
Fall time
td(off)
tf
-
-
-
420
20
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ10.0Ω,
Lσꢀ=ꢀ175nH,ꢀCσꢀ=ꢀ40pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Turn-off energy
Eoff
1.60
mJ
Energy losses include “tail” and
diode reverse recovery.
Turn-off energy, soft switching
Eoff
dv/dtꢀ=ꢀ200.0V/µs
-
0.22
-
mJ
Datasheet
4
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-off delay time
Fall time
td(off)
tf
-
-
-
490
90
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ10.0Ω,
Lσꢀ=ꢀ175nH,ꢀCσꢀ=ꢀ40pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Turn-off energy
Eoff
2.90
mJ
Energy losses include “tail” and
diode reverse recovery.
Turn-off energy, soft switching
Eoff
dv/dtꢀ=ꢀ200.0V/µs
-
0.57
-
mJ
Datasheet
5
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
400
360
320
280
240
200
160
120
80
100
not for linear use
10
1
40
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V;ꢀtp=1µs)
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(Tvj≤175°C)
80
60
40
20
0
120
VGE = 20V
100
17V
15V
13V
11V
9V
80
60
40
20
0
8V
7V
5V
25
50
75
100
125
150
175
0
1
2
3
4
5
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
Datasheet
6
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
120
120
100
80
60
40
20
0
Tvj = 25°C
Tvj =175°C
VGE = 20V
100
17V
15V
13V
11V
9V
80
60
40
20
0
8V
7V
5V
0
1
2
3
4
5
0
2
4
6
8
10
12
14
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
3.0
IC = 20A
IC = 40A
IC = 80A
td(off)
tf
1000
100
10
2.5
2.0
1.5
1.0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀrG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
1E+4
1000
100
10
td(off)
tf
td(off)
tf
1000
100
10
0
10
20
30
40
50
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀIC=40A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,
IC=40A,ꢀrG=10Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
7.0
6.2
5.4
4.6
3.8
3.0
7
6
5
4
3
2
1
0
Eoff
typ.
min.
max.
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(IC=1mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀrG=10Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
8
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
4.5
3.0
2.7
2.4
2.1
1.8
1.5
Eoff
Eoff
4.1
3.7
3.3
2.9
2.5
0
10
20
30
40
50
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,
IC=40A,ꢀrG=10Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀIC=40A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
3.5
1.50
Tvj = 25°C
Tvj = 175°C
Eoff
1.25
1.00
0.75
0.50
0.25
0.00
3.0
2.5
2.0
400 450 500 550 600 650 700 750 800
0
10
20
30
40
50
60
70
80
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=0/15V,
IC=40A,ꢀrG=10Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16. Typicalꢀturnꢀoffꢀswitchingꢀenergyꢀlossꢀfor
softꢀswitching
(inductiveꢀload,VCE=600V,ꢀVGE=0/15V,
RG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
Datasheet
9
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
16
1E+4
1000
100
VCCꢀ=ꢀ240V
VCCꢀ=ꢀ960V
Cies
Coes
Cres
14
12
10
8
6
4
2
0
10
0
40
80
120 160 200 240 280 320
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀgateꢀcharge
(IC=40A)
Figure 18. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
1
1
D = 0.5
0.1
0.1
0.2
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.05
0.02
single pulse
0.01
0.01
0.01
single pulse
i:
1
2
3
4
i:
1
2
3
4
ri[K/W]: 6.6E-3 0.108909 0.154872 0.109704
τi[s]: 1.1E-5 2.9E-4 3.5E-3 0.02156
ri[K/W]: 0.03881 0.08583 0.11772 0.13766
τi[s]:
7.0E-5
1.0E-4
2.7E-3
0.02792
0.001
1E-6
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
1E-5
1E-4
0.001
0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]]
Figure 19. IGBTꢀtransientꢀthermalꢀresistance
(D=tp/T)
Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
Datasheet
10
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
120
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Tvj = 25°C
Tvj = 175°C
IF = 20A
IF = 40A
IF = 80A
100
80
60
40
20
0
0
1
2
3
4
5
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 21. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 22. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
11
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
Package Drawing PG-TO247-3
Datasheet
12
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
13
Vꢀ2.3
2019-09-20
IHW40N120R5
ResonantꢀSwitchingꢀSeries
RevisionꢀHistory
IHW40N120R5
Revision:ꢀ2019-09-20,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2.2
2.3
2018-04-17 Final Datasheet
2018-09-17 Added thermal network on Fig.19 & 20
2019-09-20 additional parameter in maximum ratings table: non repetitive peak collector current
Datasheet
14
Vꢀ2.3
2019-09-20
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