IKY75N120CS6 [INFINEON]
TRENCHSTOP™ IGBT6;
| 型号： | IKY75N120CS6 |
| 厂家： | 
Infineon |
| 描述： | TRENCHSTOP™ IGBT6 双极性晶体管 |
| 文件： | 总16页 (文件大小：2024K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
HighꢀspeedꢀsoftꢀswitchingꢀTRENCHSTOPTMꢀꢀIGBTꢀ6ꢀinꢀTrenchꢀandꢀFieldstop
technologyꢀcopackedꢀwithꢀsoftꢀandꢀfastꢀrecoveryꢀanti-parallelꢀdiode
ꢀ
Features:
1200VꢀTRENCHSTOPTMꢀIGBT6ꢀtechnologyꢀoffering:
•ꢀHighꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonantꢀtopologies
•ꢀEasyꢀparallelingꢀcapabilityꢀdueꢀtoꢀpositiveꢀtemperature
coefficientꢀinꢀVCEsat
•ꢀLowꢀEMI
•ꢀLowꢀGateꢀChargeꢀQg
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀfullꢀcurrentꢀanti-parallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀIndustrialꢀUPS
•ꢀCharger
•ꢀEnergyꢀstorage
•ꢀThree-levelꢀSolarꢀStringꢀInverter
•ꢀWelding
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.85V 175°C
Marking
Package
IKY75N120CS6
1200V
75A
K75MCS6
PG-TO247-4-2
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.2
2018-08-07
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
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IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
1200
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IC
150.0
75.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
300.0
300.0
A
A
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ1200V,ꢀTvjꢀ≤ꢀ175°C
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IF
150.0
75.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
300.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ0.5µs,ꢀDꢀ<ꢀ0.001)
±20
25
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
880.0
440.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.17 K/W
0.41 K/W
40 K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Datasheet
3
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IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.85 2.15
Collector-emitter saturation voltage VCEsat
V
2.15
2.25
-
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
2.10 2.20
V
V
2.15
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ3.50mA,ꢀVCEꢀ=ꢀVGE
5.1
5.7
6.3
VCEꢀ=ꢀ1200V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
1600 µA
-
3500
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ75.0A
-
-
-
600
-
nA
S
60.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
4900
360
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
225
VCCꢀ=ꢀ960V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
530.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
32
32
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ4.0Ω,ꢀRG(off)ꢀ=ꢀ4.0Ω,
Lσꢀ=ꢀ70nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
300
31
ns
ns
Turn-on energy
Eon
Eoff
Ets
2.20
2.95
5.15
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.2
2018-08-07
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
205
4.70
76.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ75.0A,
diF/dtꢀ=ꢀ2700A/µs,
Lσꢀ=ꢀ70nH,
Cσꢀ=ꢀ67pF
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1500
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
33
33
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ4.0Ω,ꢀRG(off)ꢀ=ꢀ4.0Ω,
Lσꢀ=ꢀ70nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
370
58
ns
ns
Turn-on energy
Eon
Eoff
Ets
3.30
5.30
8.60
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
340
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ75.0A,
diF/dtꢀ=ꢀ2700A/µs,
Lσꢀ=ꢀ70nH,
Cσꢀ=ꢀ67pF
Qrr
10.60
105.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1050
-
A/µs
Datasheet
5
Vꢀ2.2
2018-08-07
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
300
VGE=20V
17V
15V
13V
11V
9V
100
10
1
250
200
150
100
50
not for linear use
7V
0.1
0
1
10
100
1000
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTvj≤175°C;ꢀVGE=15V,ꢀpulseꢀwidth
Figure 2. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
limitedꢀbyꢀTvjmax
)
300
250
200
150
100
50
300
VGE=20V
Tvj = 25°C
Tvj = 175°C
17V
15V
13V
11V
9V
250
200
150
100
50
7V
0
0
0
1
2
3
4
5
6
2
4
6
8
10
12
14
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 4. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Datasheet
6
Vꢀ2.2
2018-08-07
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
IC = 37.5A
IC = 75A
IC = 150A
td(off)
tf
td(on)
tr
100
10
1
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 5. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 6. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀRG=4Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
1000
100
10
1000
100
10
1
1
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀIC=75A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,
IC=75A,ꢀRG=4Ω,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigure
E)
Datasheet
7
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2018-08-07
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
8
7
6
5
4
3
2
18
typ.
min.
max.
Eoff
Eon
Ets
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 9. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Figure 10. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
(IC=3.5mA)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀRG=4Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
16
10
9
8
7
6
5
4
3
2
1
0
Eoff
Eon
Ets
Eoff
Eon
Ets
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀIC=75A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,
IC=75A,ꢀRG=4Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
8
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IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
14
12
10
8
4000
Eoff
Eon
Ets
Tvj = 25°C
Tvj = 175°C
3500
3000
2500
2000
1500
1000
500
6
4
2
0
0
400 450 500 550 600 650 700 750 800
0
2
4
6
8
10
12
14
16
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=0/15V,
IC=75A,ꢀRG=4Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14. Typicalꢀdiodeꢀcurrentꢀslopeꢀasꢀaꢀfunctionꢀof
gateꢀresistor
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,
IC=75A,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
16
VCCꢀ=ꢀ240V
VCCꢀ=ꢀ960V
Cies
Coes
Cres
1E+4
14
12
10
8
1000
6
100
4
2
0
10
0
100
200
300
400
500
600
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=75A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
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IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
0.1
0.1
D = 0.5
0.2
D = 0.5
0.2
0.1
0.1
0.05
0.05
0.01
0.001
1E-4
0.02
0.02
0.01
0.001
1E-4
0.01
0.01
single pulse
single pulse
i:
1
2
3
4
5
6
i:
1
2
3
4
5
ri[K/W]: 7.4E-4 0.031224 0.033227 0.108076 5.3E-3
1.3E-3
ri[K/W]: 0.08116 0.11422 0.20483 9.7E-3
1.8E-3
τi[s]:
3.4E-5 3.4E-4
2.9E-3
0.01786 0.227615 3.143017
τi[s]:
3.2E-4
3.1E-3
0.0161 0.22001 2.7875
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀresistance
(D=tp/T)
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
900
14
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
800
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
12
10
8
700
600
500
400
300
200
100
0
6
4
2
0
1000
1500
2000
2500
3000
3500
1000
1500
2000
2500
3000
3500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=600V)
(VR=600V)
Datasheet
10
Vꢀ2.2
2018-08-07
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
140
0
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
-300
-600
120
100
80
60
40
20
0
-900
-1200
-1500
-1800
-2100
-2400
-2700
-3000
1000
1500
2000
2500
3000
3500
1000
1500
2000
2500
3000
3500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=600V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=600V)
6
300
Tj=25°C, IF = 75A
Tj=175°C, IF = 75A
Tvj = 25°C
Tvj = 175°C
5
4
3
2
1
0
250
200
150
100
50
0
1000
1500
2000
2500
3000
3500
0
1
2
3
4
5
6
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23. Typicalꢀreverseꢀenergyꢀlossesꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
ofꢀforwardꢀvoltage
(VR=600V)
Datasheet
11
Vꢀ2.2
2018-08-07
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
4.0
IF = 37.5A
IF = 75A
IF = 150A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.2
2018-08-07
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
PG-TO247-4-2
M
A
E
E2
A2
R
b2
b4
E3
H
b6
2x
E1
1
2 3
e1
4
e
b
4 3 2
1
A1
b7
c
PACKAGE SURFACE ROUTE BETWEEN
PIN 1 & PIN 2 WILL BE 5.1mm MIN.
ALL b... AND c DIMENSIONS INCLUDING
PLATING EXCEPT AREA OF CUTTING
MILLIMETERS
MIN.
DIMENSION
MAX.
5.1
A
A1
A2
b
4.9
2.31
1.9
2.51
2.1
1.16
1.36
2.16
1.16
1.16
0.59
1.29
1.49
2.29
1.45
1.65
0.66
21.1
22.5
16.55
1.35
1.8
b2
b4
b6
b7
c
DOCUMENT NO.
Z8B00182798
D
20.9
REVISION
D1
D2
D3
D4
E
22.3
15.95
1
01
SCALE 2:1
1.6
15.7
3.9
15.9
4.1
0
5
10mm
E1
E2
E3
e
13.1
2.58
13.5
2.78
EUROPEAN PROJECTION
2.54
5.08
e1
H
0.8
19.8
2.55
0.97
3.24
1.9
1
L
20.1
2.85
1.57
3.44
2.1
L1
M
ISSUE DATE
N
23.09.2016
R
Datasheet
13
Vꢀ2.2
2018-08-07
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.2
2018-08-07
IKY75N120CS6
Sixthꢀgeneration,ꢀhighꢀspeedꢀsoftꢀswitchingꢀseries
RevisionꢀHistory
IKY75N120CS6
Revision:ꢀ2018-08-07,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2.2
2018-05-07 Final data sheet
2018-08-07 Fig.5 and Fig.25 legend correction
Datasheet
15
Vꢀ2.2
2018-08-07
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