IPB15N03L [INFINEON]
OptiMOS Buck converter series; 的OptiMOS降压转换器系列
| 型号： | IPB15N03L |
| 厂家： | 
Infineon |
| 描述： | OptiMOS Buck converter series |
| 文件： | 总8页 (文件大小：451K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP15N03L
IPB15N03L
OptiMOS Buck converter series
Product Summary
Feature
V
30
12.6
42
V
DS
· N-Channel
R
I
max. SMD version
mW
A
DS(on)
· Logic Level
D
· Low On-Resistance R
DS(on)
P- TO263 -3-2
P- TO220 -3-1
· Excellent Gate Charge x R
product (FOM)
DS(on)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converters
Type
Package
Ordering Code
Marking
15N03L
15N03L
IPP15N03L
P- TO220 -3-1 Q67042-S4039
P- TO263 -3-2 Q67040-S4344
IPB15N03L
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
1)
A
Continuous drain current
I
D
T =25°C
42
42
C
168
Pulsed drain current
I
D puls
T =25°C
C
20
mJ
Avalanche energy, single pulse
E
AS
I =20A, V =25V, R =25W
D
DD
GS
2)
jmax
8
6
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
E
AR
kV/µs
dv/dt
I =42A, V =-V, di/dt=200A/µs, T =175°C
jmax
S
DS
V
Gate source voltage
Power dissipation
V
±20
83
GS
W
P
tot
T =25°C
C
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +175
55/175/56
j
stg
Page 1
2003-01-17
IPP15N03L
IPB15N03L
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
-
1.2
1.8 K/W
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
R
thJC
R
thJA
-
-
-
-
62
40
2
3)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
30
typ. max.
Static Characteristics
-
-
V
Drain-source breakdown voltage
V
(BR)DSS
V
=0V, I =1mA
D
GS
1.2
1.6
2
Gate threshold voltage, V = V
V
GS
DS
GS(th)
I =40µA
D
µA
Zero gate voltage drain current
I
DSS
V
V
=30V, V =0V, T =25°C
-
-
-
0.01
10
1
1
DS
DS
GS
j
=30V, V =0V, T =125°C
100
GS
j
100 nA
Gate-source leakage current
I
GSS
V
=20V, V =0V
DS
GS
Drain-source on-state resistance
R
mW
DS(on)
V
V
=4.5V, I =21A
-
-
14.9
14.5
19.9
19.6
GS
GS
D
=4.5V, I =21A, SMD version
D
Drain-source on-state resistance
R
DS(on)
V
V
=10V, I =21A
-
-
10.3
9.9
12.9
12.6
GS
GS
D
=10V, I =21A, SMD version
D
1
Current limited by bondwire ; with an R
= 1.8K/W the chip is able to carry I = 64A at 25°C, for detailed
D
thJC
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-01-17
IPP15N03L
IPB15N03L
Electrical Characteristics
Parameter
Symbol
Conditions
Values
min. typ. max.
Unit
Dynamic Characteristics
V
³ 2*I *R ,
DS(on)max
21
42
-
S
Transconductance
g
fs
DS
D
I =42A
D
V
=0V, V =25V,
-
-
-
-
-
-
-
-
850 1130 pF
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Turn-on delay time
Rise time
C
GS
DS
iss
oss
rss
G
f=1MHz
330
90
1
330
130
-
C
C
R
t
W
V
=15V, V =10V,
6.5
20
24
9.8 ns
30
DD
GS
d(on)
I =21A,
t
t
t
D
r
R =7.8W
36
Turn-off delay time
Fall time
G
d(off)
f
14.5 21.8
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
V
=15V, I =21A
-
-
-
2.7
7.4
3.6 nC
9.3
Q
Q
Q
DD
D
gs
gd
g
V
V
=15V, I =21A,
12.7 15.9
Gate charge total
DD
D
=0 to 5V
GS
V
V
=15V, I =21A,
Output charge
Q
V
-
-
12.2 15.3 nC
DS
D
oss
=0V
GS
DD
V
=15V, I =21A
3.5
-
V
A
Gate plateau voltage
D
(plateau)
Reverse Diode
T =25°C
-
-
-
42
Inverse diode continuous
forward current
I
S
C
-
-
-
-
168
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
SM
V
=0V, I =42A
0.95 1.25 V
V
t
GS
F
SD
V =-V, I =l ,
24
18
31 ns
23 nC
R
F S
rr
di /dt=100A/µs
Q
F
rr
Page 3
2003-01-17
IPP15N03L
IPB15N03L
1 Power dissipation
= f (T )
2 Drain current
P
I = f (T )
tot
C
D
C
parameter: V ³ 10 V
GS
IPP15N03L
IPP15N03L
100
W
50
A
80
70
60
50
40
30
20
10
0
40
35
30
25
20
15
10
5
0
0
0
20 40 60 80 100 120 140 160
190
20 40 60 80 100 120 140 160
190
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Max. transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
C
p
10 1
10 3
IPP15N03L
IPP15N03L
K/W
A
10 0
t
= 8.8µs
10 µs
p
10 2
10 -1
100 µs
D = 0.50
0.20
10 -2
10 1
0.10
1 ms
0.05
0.02
10 -3
single pulse
10 ms
0.01
DC
10 0
10 -1
10 -4
10 0
10 1
10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
V
t
DS
p
Page 4
2003-01-17
IPP15N03L
IPB15N03L
5 Typ. output characteristic
6 Typ. drain-source on resistance
R = f (I )
DS(on)
I = f (V ); T =25°C
D
DS
j
D
parameter: t = 80 µs
parameter: V
GS
p
IPP15N03L
IPP15N03L
65
mW
Ptot = 83W
110
A
b
c
d
V
[V]
GS
a
55
50
45
40
35
30
25
20
15
10
5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
90
80
70
60
50
40
30
20
10
0
f
g
e
b
c
d
e
f
d
g
c
a
e
f
b
g
V
[V] =
c
GS
b
d
e
f
g
3.5 4.0 4.5 5.0 5.5 6.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
10
20
30
40
50
70
V
A
V
I
D
DS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I = f ( V ); V ³ 2 x I x R
g = f(I ); T =25°C
D
GS
DS
D
DS(on)max
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
100
50
A
S
80
70
60
50
40
30
20
10
0
40
35
30
25
20
15
10
5
0
0
1
2
3
4
6
0
10 20 30 40 50 60 70 80
100
V
A
V
I
D
GS
Page 5
2003-01-17
IPP15N03L
IPB15N03L
9 Drain-source on-state resistance
= f (T )
10 Typ. gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = 21 A, V = 10 V
parameter: V = V
DS
D
GS
GS
IPP15N03L
2.5
30
mW
V
24
22
20
18
16
14
12
10
8
0.8mA
1.5
1
98%
40uA
typ
0.5
0
6
4
2
0
°C
-60
-20
20
60
100
140
200
-60
-20
20
60
100
180
°C
T
T
j
j
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (V )
I = f (V )
DS
F
SD
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
j
10 4
10 3
IPP15N03L
V
A
Ciss
10 3
10 2
10 1
10 2
Coss
Crss
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 0
0
5
10
15
20
30
DS
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
V
SD
Page 6
2003-01-17
IPP15N03L
IPB15N03L
13 Typ. avalanche energy
= f (T )
15 Drain-source breakdown voltage
V = f (T )
(BR)DSS
E
AS
j
j
par.: I = 20 A, V = 25 V, R = 25 W
parameter: I =10 mA
D
DD
GS
D
IPP15N03L
20
36
mJ
V
16
14
12
10
8
34
33
32
31
30
29
28
27
6
4
2
0
25
45
65
85 105 125 145
185
-60
-20
20
60
100
140
200
°C
°C
T
T
j
j
14 Typ. gate charge
= f (Q
V
)
Gate
GS
parameter: I = 21 A pulsed
D
IPP15N03L
16
V
12
10
0.2 VDS max
8
6
4
2
0
0.5 VDS max
0.8 VDS max
nC
0
4
8
12
16
20
24
28
34
Q
Gate
Page 7
2003-01-17
IPP15N03L
IPB15N03L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2003-01-17
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