IPB156N22NFD [INFINEON]
200V、220V、250V 和 300V 的 OptiMOS™ 快速二极管（FD）针对体二极管硬换向进行了优化。这些器件是电信、工业电源、 D 类音频放大器、电机控制和 DC-AC 逆变器等硬开关应用的理想选择。;
| 型号： | IPB156N22NFD |
| 厂家： | 
Infineon |
| 描述： | 200V、220V、250V 和 300V 的 OptiMOS™ 快速二极管（FD）针对体二极管硬换向进行了优化。这些器件是电信、工业电源、 D 类音频放大器、电机控制和 DC-AC 逆变器等硬开关应用的理想选择。 开关 放大器 电机 电信 音频放大器 二极管 |
| 文件： | 总10页 (文件大小：983K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB156N22NFD
MOSFET
OptiMOSTMFDꢀPower-Transistor,ꢀ220ꢀV
D²PAK
Features
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀFastꢀDiodeꢀ(FD)ꢀwithꢀreducedꢀQrr
•ꢀOptimizedꢀforꢀhardꢀcommutationꢀruggedness
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
VDS
220
V
Gate
Pin 1
RDS(on),max
ID
15.6
72
mΩ
A
Source
Pin 3
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPB156N22NFD
PG-TO 263-3
156N22NF
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2017-06-19
OptiMOSTMFDꢀPower-Transistor,ꢀ220ꢀV
IPB156N22NFD
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2017-06-19
OptiMOSTMFDꢀPower-Transistor,ꢀ220ꢀV
IPB156N22NFD
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
72
56
TC=25ꢀ°C
A
Continuous drain current
ID
TC=100ꢀ°C
Pulsed drain current1)
Avalanche energy, single pulse2)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
288
400
20
A
TC=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
300
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.3
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.5
K/W
K/W
-
-
Thermal resistance, junction - ambient,
minimal footprint
-
-
-
-
62
40
Thermal resistance, junction - ambient,
6 cm2 cooling area3)
RthJA
K/W
-
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
220
2
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3
4
VDS=VGS,ꢀID=270ꢀµA
-
-
0.1
10
1
100
VDS=176ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=176ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
IDSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IGSS
RDS(on)
RG
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
12.9
2.8
119
15.6
mΩ VGS=10ꢀV,ꢀID=50ꢀA
-
-
-
Ω
-
Transconductance
gfs
60
S
|VDS|>2|ID|RDS(on)max,ꢀID=72ꢀA
1) See Diagran 3 for more detailed information
2) See Diagran 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2017-06-19
OptiMOSTMFDꢀPower-Transistor,ꢀ220ꢀV
IPB156N22NFD
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Ciss
Coss
Crss
-
-
-
5210 6930 pF
VGS=0ꢀV,ꢀVDS=110ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=110ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=110ꢀV,ꢀf=1ꢀMHz
343
6.2
456
-
pF
pF
Reverse transfer capacitance
VDD=110ꢀV,ꢀVGS=10ꢀV,ꢀID=36ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
15
15
45
15
-
-
-
-
ns
ns
ns
ns
VDD=110ꢀV,ꢀVGS=10ꢀV,ꢀID=36ꢀA,
RG,ext=1.6ꢀΩ
VDD=110ꢀV,ꢀVGS=10ꢀV,ꢀID=36ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=110ꢀV,ꢀVGS=10ꢀV,ꢀID=36ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
25
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=110ꢀV,ꢀID=72ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=110ꢀV,ꢀID=72ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=110ꢀV,ꢀID=72ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=110ꢀV,ꢀID=72ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=110ꢀV,ꢀID=72ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=110ꢀV,ꢀVGS=0ꢀV
Qgd
9.4
-
Qsw
Qg
19
-
66
87
-
Vplateau
Qoss
4.8
153
203
nC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode3)ꢀ
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
72
Diode continous forward current
Diode pulse current4)
Diode hard commutation current1)
IS
-
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
IS,hard
VSD
trr
-
288
144
1.2
-
A
TC=25ꢀ°C
-
A
TC=25ꢀ°C,ꢀdiF/dt=1500ꢀA/µs
VGS=0ꢀV,ꢀIF=72ꢀA,ꢀTj=25ꢀ°C
VR=100ꢀV,ꢀIF=ꢀ50ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=100ꢀV,ꢀIF=ꢀ50ꢀA,ꢀdiF/dt=100ꢀA/µs
Diode forward voltage
0.91
140
340
V
Reverse recovery time
ns
nC
Reverse recovery charge
Qrr
-
1) Define by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
3) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs
4) Diode pulse current is defined by thermal and/or package limits
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2017-06-19
OptiMOSTMFDꢀPower-Transistor,ꢀ220ꢀV
IPB156N22NFD
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
320
80
72
64
56
48
40
32
24
16
8
280
240
200
160
120
80
40
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
10 µs
102
101
100
10-1
100 µs
0.5
1 ms
0.2
10-1
10 ms
0.1
DC
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2017-06-19
OptiMOSTMFDꢀPower-Transistor,ꢀ220ꢀV
IPB156N22NFD
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
200
25
175
4.5 V
20
10 V
7 V
150
125
100
75
5 V
15
7 V
10 V
5 V
10
5
50
4.5 V
25
0
0
0
1
2
3
4
5
0
20
40
60
80
100
120
140
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
200
180
180
160
140
120
100
80
160
140
120
100
80
60
60
40
40
175 °C
25 °C
20
20
0
0
0
2
4
6
8
0
25
50
75
100
125
150
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2017-06-19
OptiMOSTMFDꢀPower-Transistor,ꢀ220ꢀV
IPB156N22NFD
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
50
4.0
45
40
35
30
3.5
2700 µA
3.0
2.5
2.0
1.5
1.0
0.5
0.0
270 µA
25
98%
20
typ
15
10
5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=50ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
Ciss
25 °C
175 °C
25°C, 98%
175°C, 98%
Coss
103
102
101
100
102
Crss
101
100
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2017-06-19
OptiMOSTMFDꢀPower-Transistor,ꢀ220ꢀV
IPB156N22NFD
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
25 °C
8
176 V
110 V
100 °C
6
44 V
101
4
2
0
150 °C
100
100
101
102
103
0
20
40
60
80
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=72ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
260
240
220
200
180
160
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2017-06-19
OptiMOSTMFDꢀPower-Transistor,ꢀ220ꢀV
IPB156N22NFD
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ263-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2017-06-19
OptiMOSTMFDꢀPower-Transistor,ꢀ220ꢀV
IPB156N22NFD
RevisionꢀHistory
IPB156N22NFD
Revision:ꢀ2017-06-19,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2017-06-19
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2017-06-19
相关型号：
IPB160N04S203ATMA1
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IPB160N04S203ATMA4
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