IPP70N04S4-06 [INFINEON]
OptiMOS-T2 Power-Transistor; 的OptiMOS -T2功率三极管
| 型号： | IPP70N04S4-06 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS-T2 Power-Transistor |
| 文件： | 总9页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB70N04S4-06
IPI70N04S4-06, IPP70N04S4-06
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
40
6.2
70
V
R
DS(on),max (SMD version)
mΩ
A
I D
Features
• N-channel - Enhancement mode
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
4N0406
4N0406
4N0406
IPB70N04S4-06
IPI70N04S4-06
IPP70N04S4-06
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
I D
T C=25°C, VGS=10V
Continuous drain current
70
51
A
T C=100°C, VGS=10V2)
Pulsed drain current1)
I D,pulse
EAS
I AS
T C=25°C
280
72
Avalanche energy, single pulse1)
Avalanche current, single pulse
Gate source voltage
I D=35A
mJ
A
-
70
VGS
Ptot
-
±20
58
V
T C=25°C
Power dissipation
W
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
°C
Rev. 1.0
page 1
2010-04-13
IPB70N04S4-06
IPI70N04S4-06, IPP70N04S4-06
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics1)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
-
-
2.6
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
I DSS
V
V
V
GS=0V, I D= 1mA
DS=VGS, I D=26µA
DS=40V, VGS=0V
Drain-source breakdown voltage
Gate threshold voltage
40
2.0
-
-
-
4.0
1
V
3.0
Zero gate voltage drain current
0.015
µA
V
DS=18V, VGS=0V,
-
1
20
T j=85°C2)
I GSS
V
V
GS=20V, VDS=0V
GS=10V, I D=70A
Gate-source leakage current
-
-
-
100 nA
R DS(on)
Drain-source on-state resistance
5.6
6.5
mΩ
V
GS=10V, I D=70A,
-
5.3
6.2
SMD version
Rev. 1.0
page 2
2010-04-13
IPB70N04S4-06
IPI70N04S4-06, IPP70N04S4-06
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
1960
490
15
8
2550 pF
640
V
GS=0V, VDS=25V,
f =1MHz
35
-
-
-
-
ns
10
7
V
DD=20V, VGS=10V,
I D=70A, R G=3.5Ω
t d(off)
t f
Turn-off delay time
Fall time
9
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
11.7
3.5
15.2 nC
8.1
Q gd
V
V
DD=32V, I D=70A,
GS=0 to 10V
Q g
24.5
5.9
32.0
Vplateau
Gate plateau voltage
-
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
70
T C=25°C
I S,pulse
280
V
GS=0V, I F=70A,
VSD
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
-
-
-
0.9
36
31
1.3
V
T j=25°C
VR=20V, I F=50A,
diF/dt =100A/µs
t rr
-
-
ns
nC
Q rr
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2010-04-13
IPB70N04S4-06
IPI70N04S4-06, IPP70N04S4-06
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V; SMD
60
80
60
40
20
0
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0; SMD
parameter: t p
Z
parameter: D =t p/T
101
1000
100
10
1 µs
10 µs
0.5
100
100 µs
0.1
0.05
1 ms
10-1
0.01
1
single pulse
10-2
0.1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V
DS [V]
Rev. 1.0
page 4
2010-04-13
IPB70N04S4-06
IPI70N04S4-06, IPP70N04S4-06
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C; SMD
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = f(I D); T j = 25 °C; SMD
R
parameter: VGS
250
15
200
13
11
9
5.5 V
6.5 V
6 V
10 V
7V
150
6.5 V
100
50
0
7 V
6 V
7
5.5 V
5 V
10 V
5
0
0
1
2
3
4
40
80
120
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R
DS(on) = f(T j); I D = 70 A; VGS = 10 V; SMD
180
9.5
8.5
7.5
6.5
5.5
4.5
3.5
120
60
175 °C
25 °C
-55 °C
0
3
4
5
6
7
-60
-20
20
60
T j [°C]
100
140
180
V
GS [V]
Rev. 1.0
page 5
2010-04-13
IPB70N04S4-06
IPI70N04S4-06, IPP70N04S4-06
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
4
104
3.5
3
Ciss
103
150 µA
Coss
26 µA
2.5
2
102
Crss
101
1.5
-60
0
5
10
15
20
25
30
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Typical forward diode characteristicis
12 Avalanche characteristics
A S= f(t AV
IF = f(VSD)
I
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
100 °C
150 °C
102
10
1
175 °C
25 °C
101
100
0.1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
10
AV [µs]
100
1000
V
SD [V]
t
Rev. 1.0
page 6
2010-04-13
IPB70N04S4-06
IPI70N04S4-06, IPP70N04S4-06
13 Avalanche energy
AS = f(T j)
14 Drain-source breakdown voltage
BR(DSS) = f(T j); I D = 1 mA
E
V
parameter: I D
46
44
42
40
38
36
150
17 A
125
100
75
50
25
0
35 A
75 A
-55
-15
25
65
105
145
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 70 A pulsed
16 Gate charge waveforms
V
parameter: VDD
10
9
8
7
6
5
4
3
2
1
8 V
V GS
32 V
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
0
10
20
30
Q
gate [nC]
Rev. 1.0
page 7
2010-04-13
IPB70N04S4-06
IPI70N04S4-06, IPP70N04S4-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2010-04-13
IPB70N04S4-06
IPI70N04S4-06, IPP70N04S4-06
Revision History
Version
Date
Changes
Revision 1.0
13.04.2010 Final Data Sheet
Rev. 1.0
page 9
2010-04-13
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